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DSS5160U-7

Diodes Incorporated

DSS5160U-7 by Diodes Incorporated

DSS5160U-7 by Diodes Inc. is a PNP BJT with 60V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its high hFE of 100, it comes in a surface-mount package with GULL WING terminals for efficient PCB assembly. Operating up to 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,385 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.085

10k+ parts

$0.061

7,385

$0.340

$0.130

$0.085

$0.061

Mouser Electronics

USA . 6,005 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.086

10k+ parts

$0.054

6,005

$0.340

$0.130

$0.086

$0.054

Verical

USA . 981,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

981,000

-

-

-

$0.044

Avnet

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

51,000

-

-

-

$0.070

IBS Electronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.053

33,000

-

-

-

$0.053

Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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12,000

-

-

-

-

Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

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-

-

-

ACDS - Activité Composants Distribution Service

France . 2,798 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,798

-

-

-

-

Bristol Electronics

USA . 2,798 parts In-Stock

1+ parts

-

100+ parts

$0.131

1k+ parts

$0.079

10k+ parts

$0.052

2,798

-

$0.131

$0.079

$0.052

Dan-Mar Components

USA . 2,798 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,798

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.881

100+ parts

$0.802

1k+ parts

$0.722

10k+ parts

-

350

$0.881

$0.802

$0.722

-

Perfect Parts

USA . 18,843 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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18,843

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-

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,000

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-

-

-

Alle Elektronik GmbH

Germany . 2,139 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,139

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,000

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-

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Northwest PG Solutions

USA . 1,232 parts In-Stock

1+ parts

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100+ parts

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1,232

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Native Components

USA . 117 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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117

-

-

-

-

Overview

Discover the DSS5160U-7 by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for reliable performance in various applications. With Diodes Incorporated's reputation for excellence in semiconductor manufacturing, this PNP transistor offers customers unparalleled value and benefits. Whether you're looking to enhance your electronic devices or improve circuit efficiency, the DSS5160U-7 delivers exceptional performance and durability. Upgrade your projects with this versatile and dependable component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications and can handle larger currents compared to other types of transistors.

Configuration: SINGLE

Single configuration makes it easy to use and integrate into circuits without complications from multiple transistor setups.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and mounting of the transistor on the PCB, optimizing space usage.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this transistor can handle moderate power levels efficiently.

Minimum DC Current Gain (hFE): 100

Minimum DC current gain of 100 ensures reliable amplification capabilities for various signal processing tasks.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance even in demanding environments or applications.

Maximum Collector-Emitter Voltage: 60 V

Capable of handling collector-emitter voltages up to 60V, making it suitable for a wide range of voltage applications.

Maximum Collector Current (IC): 1 A

High maximum collector current of 1A allows for handling of larger currents, suitable for various power applications.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150 MHz enables efficient switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS5160U-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS5160U-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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