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DSS5240V-7

Diodes Incorporated

DSS5240V-7 by Diodes Incorporated

DSS5240V-7 by Diodes Inc. is a PNP BJT with 40V VCEO, 1.8A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its high transition frequency, low power dissipation, and compact SOT package design.

Median Price

$0.370

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,030 parts In-Stock

1+ parts

$0.370

100+ parts

$0.143

1k+ parts

$0.093

10k+ parts

$0.056

8,030

$0.370

$0.143

$0.093

$0.056

DigiKey

USA . 3,850 parts In-Stock

1+ parts

$0.370

100+ parts

$0.143

1k+ parts

$0.094

10k+ parts

$0.068

3,850

$0.370

$0.143

$0.094

$0.068

Verical

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

33,000

-

-

-

$0.050

Arrow

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 838 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

$0.109

838

$0.113

-

-

$0.109

Northwest PG Solutions

USA . 2,333 parts In-Stock

1+ parts

$0.125

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

2,333

$0.125

-

-

$0.110

Kepictronics

USA . 63,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

63,900

-

-

-

-

Perfect Parts

USA . 29,398 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,398

-

-

-

-

Overview

Unlock exceptional performance with the DSS5240V-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-notch quality and reliability. This PNP small signal bipolar junction transistor offers a wide range of applications, providing customers with unmatched value and benefits. With its high power dissipation, maximum collector-emitter voltage, and nominal transition frequency, the DSS5240V-7 is the perfect choice for your electronic projects. Experience the advantages of superior technology and efficiency with this innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and reliability of the transistor, making it a good choice for various applications.

Polarity or Channel Type: PNP

The PNP polarity or channel type offers complementary functionality to NPN transistors, providing designers with more options for circuit configurations.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to integrate the transistor into different electronic systems.

Maximum Power Dissipation (Abs): 0.6 W

The high maximum power dissipation of 0.6 W allows the transistor to handle moderate power levels efficiently, enhancing its performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable operation under challenging conditions.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating of 40 V provides ample headroom for voltage spikes and fluctuations in the circuit, making the transistor suitable for diverse applications.

Maximum Collector Current (IC): 1.8 A

The high maximum collector current rating of 1.8 A allows the transistor to handle high current loads, making it ideal for power amplification and switching applications.

Nominal Transition Frequency (fT): 150 MHz

With a nominal transition frequency of 150 MHz, this transistor is capable of high-frequency operation, making it suitable for use in RF amplification and signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS5240V-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS5240V-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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