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DSS5160T-7

Diodes Incorporated

DSS5160T-7 by Diodes Incorporated

DSS5160T-7 by Diodes Inc. is a PNP BJT transistor with 60V VCEO, 1A IC, and 150MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high hFE of 100. Features Gull Wing terminals, small outline package, and can operate up to 150°C.

Median Price

$0.352

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,911 parts In-Stock

1+ parts

$0.450

100+ parts

$0.175

1k+ parts

$0.117

10k+ parts

$0.085

2,911

$0.450

$0.175

$0.117

$0.085

Mouser Electronics

USA . 228 parts In-Stock

1+ parts

$0.460

100+ parts

$0.178

1k+ parts

$0.125

10k+ parts

$0.099

228

$0.460

$0.178

$0.125

$0.099

Newark

USA . 30 parts In-Stock

1+ parts

$0.585

100+ parts

$0.213

1k+ parts

$0.118

10k+ parts

-

30

$0.585

$0.213

$0.118

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Verical

USA . 510,000 parts In-Stock

1+ parts

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$0.066

510,000

-

-

-

$0.066

Farnell

UK . 100 parts In-Stock

1+ parts

-

100+ parts

$0.148

1k+ parts

$0.099

10k+ parts

$0.083

100

-

$0.148

$0.099

$0.083

Element14

Singapore . 100 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.143

10k+ parts

$0.141

100

-

$0.254

$0.143

$0.141

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 2,856 parts In-Stock

1+ parts

$0.410

100+ parts

$0.165

1k+ parts

$0.104

10k+ parts

$0.077

2,856

$0.410

$0.165

$0.104

$0.077

ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

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ComSIT USA

USA . 6,000 parts In-Stock

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6,000

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IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.074

6,000

-

-

-

$0.074

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.091

6,000

-

-

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$0.091

Bristol Electronics

USA . 216 parts In-Stock

1+ parts

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216

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Contempo Components LLC

USA . 80 parts In-Stock

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 85,238 parts In-Stock

1+ parts

$0.051

100+ parts

-

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85,238

$0.051

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.071

100+ parts

$0.975

1k+ parts

$0.878

10k+ parts

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50

$1.071

$0.975

$0.878

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Corohmni

South Africa . 525 parts In-Stock

1+ parts

$1.710

100+ parts

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525

$1.710

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Eastek

USA . 42,000 parts In-Stock

1+ parts

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$0.090

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42,000

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$0.090

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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Lixinc

USA . 19,899 parts In-Stock

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Perfect Parts

USA . 14,710 parts In-Stock

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14,710

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iodParts Technologies Inc.

India . 5,860 parts In-Stock

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5,860

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QUARKTWIN TECHNOLOGY LTD

USA . 3,238 parts In-Stock

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3,238

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Argo Parts USA

USA . 3,054 parts In-Stock

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3,054

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Continental Prestige Electronics

USA . 2,725 parts In-Stock

1+ parts

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100+ parts

$0.172

1k+ parts

$0.091

10k+ parts

$0.068

2,725

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$0.172

$0.091

$0.068

Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the DSS5160T-7 by Diodes Incorporated. With a maximum collector-emitter voltage of 60V and a maximum collector current of 1A, this PNP transistor is perfect for switching applications. Its small outline package and matte tin finish make it easy to install on any surface. Trust in Diodes Incorporated's reputation for excellence and choose the DSS5160T-7 for all your transistor needs. Upgrade your electronic projects today with the best in the industry!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective, lightweight, and offers good thermal and electrical insulation, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for applications where positive voltage control is required.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to handle for many applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently switch between on and off states, making it ideal for digital circuits.

Surface Mount: YES

Surface mount technology allows for space-saving and efficient assembly, making it suitable for compact electronics.

Package Shape: RECTANGULAR

The rectangular shape offers ease of handling and mounting in circuit boards.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 0.725 W

With a high maximum power dissipation, this transistor can handle moderate power levels, increasing its versatility.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for applications where temperature may fluctuate.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage allows for the handling of higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, ensuring the durability of this transistor.

Maximum Collector Current (IC): 1 A

With a high maximum collector current, this transistor can handle moderate current levels, making it suitable for various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and solderable surface for connections, ensuring good electrical contact and durability.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and ease of connection in different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures a safe and reliable soldering process during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering and good mechanical connections during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliable performance suitable for automotive applications.

Nominal Transition Frequency (fT): 150 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS5160T-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS5160T-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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