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DSS5160V-7

Diodes Incorporated

DSS5160V-7 by Diodes Incorporated

DSS5160V-7 by Diodes Inc. is a PNP BJT with 60V VCE, 1A IC, and 150MHz fT. Ideal for small signal applications requiring high DC current gain and low power dissipation in a compact SOT package. Suitable for surface mount designs operating up to 150°C with matte tin finish terminals.

Median Price

$0.212

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 50 parts In-Stock

1+ parts

$0.370

100+ parts

$0.143

1k+ parts

$0.094

10k+ parts

$0.068

50

$0.370

$0.143

$0.094

$0.068

Mouser Electronics

USA . 45 parts In-Stock

1+ parts

$0.370

100+ parts

$0.143

1k+ parts

$0.095

10k+ parts

$0.080

45

$0.370

$0.143

$0.095

$0.080

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.054

3,000

-

-

-

$0.054

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.055

3,000

-

-

-

$0.055

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

6,000

-

-

-

$0.085

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.075

3,000

-

-

-

$0.075

Bristol Electronics

USA . 2,990 parts In-Stock

1+ parts

-

100+ parts

$0.094

1k+ parts

$0.056

10k+ parts

$0.037

2,990

-

$0.094

$0.056

$0.037

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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300

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,022 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

3,022

$0.047

-

-

-

Corohmni

South Africa . 1,233 parts In-Stock

1+ parts

$1.640

100+ parts

-

1k+ parts

-

10k+ parts

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1,233

$1.640

-

-

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Modulus Dynamics

Lithuania . 15,767 parts In-Stock

1+ parts

$1.825

100+ parts

$1.825

1k+ parts

$1.825

10k+ parts

-

15,767

$1.825

$1.825

$1.825

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Perfect Parts

USA . 26,589 parts In-Stock

1+ parts

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100+ parts

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26,589

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Argo Parts USA

USA . 5,249 parts In-Stock

1+ parts

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5,249

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,000

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-

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

1+ parts

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3,000

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.060

10k+ parts

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3,000

-

-

$0.060

-

Continental Prestige Electronics

USA . 2,625 parts In-Stock

1+ parts

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100+ parts

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2,625

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-

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-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

-

-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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100

-

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-

-

Overview

Elevate your electronic projects with the DSS5160V-7 by Diodes Incorporated. Crafted with precision and quality, this Small Signal Bipolar Junction Transistor (BJT) guarantees top-notch performance. Whether you're a hobbyist or a professional, this PNP transistor offers reliability and efficiency in a compact package. With a maximum collector-emitter voltage of 60V and a high DC current gain of 100, rest assured that your circuits will operate smoothly. Upgrade your designs with the DSS5160V-7 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are often used in high-power switching applications, making this transistor suitable for such applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to manage connections.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and alignment on the PCB.

Terminal Form: FLAT

Flat terminals make soldering and connection process easier and more reliable.

No. of Terminals: 6

Provides flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.6 W

High power dissipation capability allows for reliable operation under various load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB and allows for compact designs.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to perform reliably in various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating allows for operation in high-voltage circuits.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability for the transistor.

Maximum Collector Current (IC): 1 A

High collector current rating allows for handling of higher currents in the circuit.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and reliability of the connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes the risk of thermal damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering process.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency indicates good high-frequency performance of the transistor, suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS5160V-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS5160V-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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