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DSS5240T-7

Diodes Incorporated

DSS5240T-7 by Diodes Incorporated

DSS5240T-7 by Diodes Inc. is a PNP BJT transistor for switching applications. Features include 40V max collector-emitter voltage, 2A max collector current, and 100MHz transition frequency. With a small outline package and -55 to 150°C operating range, it's ideal for compact electronic devices.

Median Price

$0.094

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 944 parts In-Stock

1+ parts

$0.480

100+ parts

$0.203

1k+ parts

$0.124

10k+ parts

$0.105

944

$0.480

$0.203

$0.124

$0.105

Newark

USA . 64 parts In-Stock

1+ parts

$0.588

100+ parts

$0.251

1k+ parts

$0.179

10k+ parts

-

64

$0.588

$0.251

$0.179

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Arrow

USA . 15,000 parts In-Stock

1+ parts

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$0.094

15,000

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$0.094

Verical

USA . 15,000 parts In-Stock

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$0.094

15,000

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$0.094

Element14

Singapore . 1,514 parts In-Stock

1+ parts

-

100+ parts

$0.083

1k+ parts

$0.063

10k+ parts

$0.062

1,514

-

$0.083

$0.063

$0.062

Farnell

UK . 1,349 parts In-Stock

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-

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1k+ parts

$0.067

10k+ parts

$0.049

1,349

-

-

$0.067

$0.049

Distributors (In-Stock)

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Nova Conductors

Japan . 51 parts In-Stock

1+ parts

$0.083

100+ parts

-

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51

$0.083

-

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Sensible Micro Corp

USA . 224,706 parts In-Stock

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224,706

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IBS Electronics

USA . 180,000 parts In-Stock

1+ parts

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$0.250

180,000

-

-

-

$0.250

NAC Semi

USA . 138,000 parts In-Stock

1+ parts

-

100+ parts

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$0.071

138,000

-

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$0.071

Ashlea Components Ltd

UK . 59,793 parts In-Stock

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59,793

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Vyrian

USA . 41,154 parts In-Stock

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Rutronik

Germany . 18,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.081

18,000

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$0.081

Semi Source

USA . 4,686 parts In-Stock

1+ parts

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4,686

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Cyclops Electronics Ltd

UK . 824 parts In-Stock

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824

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Distributors (Availability)

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Semicontronic

India . 36,350 parts In-Stock

1+ parts

$0.043

100+ parts

$0.042

1k+ parts

$0.042

10k+ parts

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36,350

$0.043

$0.042

$0.042

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Ampacity Inc.

Singapore . 36,156 parts In-Stock

1+ parts

$0.052

100+ parts

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36,156

$0.052

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Argo Parts USA

USA . 692 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

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10k+ parts

$0.080

692

$0.083

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-

$0.080

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$0.083

100+ parts

$0.079

1k+ parts

$0.075

10k+ parts

$0.074

10

$0.083

$0.079

$0.075

$0.074

Component Stockers USA

USA . 334,536 parts In-Stock

1+ parts

$0.090

100+ parts

$0.080

1k+ parts

$0.060

10k+ parts

$0.040

334,536

$0.090

$0.080

$0.060

$0.040

Modulus Dynamics

Lithuania . 20,087 parts In-Stock

1+ parts

$0.092

100+ parts

$0.092

1k+ parts

$0.092

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-

20,087

$0.092

$0.092

$0.092

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Corohmni

South Africa . 314 parts In-Stock

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$0.092

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314

$0.092

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Perfect Parts

USA . 99,155 parts In-Stock

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Eastek

USA . 57,000 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 2,564 parts In-Stock

1+ parts

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100+ parts

$0.067

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$0.052

10k+ parts

$0.036

2,564

-

$0.067

$0.052

$0.036

Lixinc

USA . 1,575 parts In-Stock

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1,575

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Overview

The DSS5240T-7 by Diodes Incorporated is a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. With a maximum collector-emitter voltage of 40V and a collector current of 2A, this PNP transistor is perfect for a wide range of electronic projects. Diodes Incorporated is known for its innovative technology and reliable products, making the DSS5240T-7 a smart choice for customers looking for high-value components. Upgrade your circuits with this versatile transistor and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to external environmental factors, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP type allows for easy integration into circuits where PNP transistors are required, providing flexibility in design.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to incorporate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Surface Mount: YES

Surface mount capability enables easy PCB assembly and saves space on the board, making it suitable for compact designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB and easy integration into the circuit layout.

Terminal Form: GULL WING

Gull wing terminals make it easy to solder and ensure reliable electrical connections.

No. of Terminals: 3

Three terminals provide essential connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6 W, this transistor can handle moderate power levels in various applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high component density in the circuit.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures stable and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for operation in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40 V, this transistor can handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor in various applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C allows for operation in extreme cold conditions.

Maximum Collector Current (IC): 2 A

High maximum collector current of 2 A allows for carrying higher current levels in the circuit.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good conductivity and ensures reliable solder joints during assembly.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connecting the transistor in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can undergo reflow soldering without damage.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper solder melting and joint formation during assembly.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100 MHz allows for fast switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS5240T-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS5240T-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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