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DSS5320T-7

Diodes Incorporated

DSS5320T-7 by Diodes Incorporated

DSS5320T-7 by Diodes Inc. is a PNP BJT transistor for switching applications. Features include 20V max collector-emitter voltage, 2A max collector current, and 180MHz transition frequency. Its small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic circuits.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 29,094 parts In-Stock

1+ parts

$0.330

100+ parts

$0.126

1k+ parts

$0.083

10k+ parts

$0.059

29,094

$0.330

$0.126

$0.083

$0.059

Mouser Electronics

USA . 15,403 parts In-Stock

1+ parts

$0.330

100+ parts

$0.123

1k+ parts

$0.083

10k+ parts

$0.050

15,403

$0.330

$0.123

$0.083

$0.050

Newark

USA . 2,345 parts In-Stock

1+ parts

$0.350

100+ parts

$0.146

1k+ parts

$0.102

10k+ parts

-

2,345

$0.350

$0.146

$0.102

-

Arrow

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

21,000

-

-

-

$0.038

Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

21,000

-

-

-

$0.038

Farnell

UK . 2,345 parts In-Stock

1+ parts

-

100+ parts

$0.096

1k+ parts

$0.058

10k+ parts

-

2,345

-

$0.096

$0.058

-

Element14

Singapore . 2,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.080

10k+ parts

$0.079

2,125

-

-

$0.080

$0.079

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 87,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.130

87,000

-

-

-

$0.130

Chip Stock

USA . 10,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,500

-

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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650

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 13,832 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

13,832

$0.040

-

-

-

Continental Prestige Electronics

USA . 2,840 parts In-Stock

1+ parts

$0.353

100+ parts

$0.135

1k+ parts

$0.067

10k+ parts

$0.045

2,840

$0.353

$0.135

$0.067

$0.045

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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90,000

-

-

-

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Kepictronics

USA . 36,888 parts In-Stock

1+ parts

-

100+ parts

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36,888

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-

-

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Eastek

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.050

10k+ parts

-

9,000

-

-

$0.050

-

QUARKTWIN TECHNOLOGY LTD

USA . 6,943 parts In-Stock

1+ parts

-

100+ parts

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6,943

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-

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Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

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6,720

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-

-

-

RC Electronics

USA . 5,400 parts In-Stock

1+ parts

-

100+ parts

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5,400

-

-

-

-

GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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2,000

-

-

-

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Lixinc

USA . 1,930 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,930

-

-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

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-

-

-

Overview

The DSS5320T-7 by Diodes Incorporated is a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled quality and reliability. With its PNP polarity, single configuration, and switching application, this transistor is perfect for a wide range of electronic projects. Whether you're a hobbyist or a professional, this product's small outline package and high DC current gain make it easy to use and versatile. Trust Diodes Incorporated to deliver cutting-edge technology and superior performance with the DSS5320T-7, providing you with the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor durable and resistant to temperature variations.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP transistors in circuits, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching times and efficient performance.

Surface Mount: YES

Surface mount capability enables easy and space-saving PCB assembly, ideal for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape ensures efficient use of board space and facilitates streamlined PCB layout.

No. of Terminals: 3

The 3 terminals offer flexibility in circuit connections and enable various configurations.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, the transistor can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic applications.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain of 100 ensures reliable and consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for stable performance in challenging thermal environments.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20V, the transistor can handle a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability in transistor operation.

Maximum Collector Current (IC): 2 A

The transistor's maximum collector current of 2A enables it to handle higher current loads in circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and component orientation.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for high-temperature soldering without affecting transistor performance.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency of 180MHz indicates fast signal switching capabilities for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS5320T-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS5320T-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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