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DMPH6050SFGQ-7

Diodes Incorporated

DMPH6050SFGQ-7 by Diodes Incorporated

DMPH6050SFGQ-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 32A IDM, 30.8mJ EAS, and 0.07 ohm Drain-Source Resistance. This ENHANCEMENT MODE transistor operates up to 175°C, meeting AEC-Q101 and MIL-STD-202 standards for automotive and military use.

Median Price

$0.886

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,125 parts In-Stock

1+ parts

$0.843

100+ parts

$0.509

1k+ parts

$0.340

10k+ parts

-

1,125

$0.843

$0.509

$0.340

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Element14

Singapore . 2,077 parts In-Stock

1+ parts

$0.928

100+ parts

$0.592

1k+ parts

$0.469

10k+ parts

$0.434

2,077

$0.928

$0.592

$0.469

$0.434

DigiKey

USA . 313 parts In-Stock

1+ parts

$1.070

100+ parts

$0.440

1k+ parts

$0.308

10k+ parts

$0.226

313

$1.070

$0.440

$0.308

$0.226

Newark

USA . 1,189 parts In-Stock

1+ parts

$1.100

100+ parts

$0.539

1k+ parts

$0.431

10k+ parts

-

1,189

$1.100

$0.539

$0.431

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Farnell

UK . 2,077 parts In-Stock

1+ parts

-

100+ parts

$0.570

1k+ parts

$0.464

10k+ parts

$0.445

2,077

-

$0.570

$0.464

$0.445

Verical

USA . 1,125 parts In-Stock

1+ parts

-

100+ parts

$0.340

1k+ parts

-

10k+ parts

-

1,125

-

$0.340

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.418

100+ parts

-

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-

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600

$0.418

-

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Kruse Electronics AG

Switzerland . 1,476,000 parts In-Stock

1+ parts

-

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1,476,000

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Kruse

Germany . 1,476,000 parts In-Stock

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1,476,000

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Chip Stock

USA . 76,567 parts In-Stock

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76,567

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Sensible Micro Corp

USA . 10,433 parts In-Stock

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10,433

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NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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$0.361

10,000

-

-

-

$0.361

Vyrian

USA . 5,004 parts In-Stock

1+ parts

-

100+ parts

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5,004

-

-

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IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.442

2,000

-

-

-

$0.442

Bristol Electronics

USA . 347 parts In-Stock

1+ parts

-

100+ parts

$0.338

1k+ parts

$0.288

10k+ parts

-

347

-

$0.338

$0.288

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,941 parts In-Stock

1+ parts

$0.285

100+ parts

-

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-

10k+ parts

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4,941

$0.285

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-

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Semicontronic

India . 4,796 parts In-Stock

1+ parts

$0.285

100+ parts

$0.278

1k+ parts

$0.276

10k+ parts

-

4,796

$0.285

$0.278

$0.276

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Argo Parts USA

USA . 1,947 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

-

10k+ parts

$0.405

1,947

$0.418

-

-

$0.405

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

$0.418

100+ parts

$0.397

1k+ parts

$0.377

10k+ parts

$0.372

40

$0.418

$0.397

$0.377

$0.372

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.496

100+ parts

$0.456

1k+ parts

$0.428

10k+ parts

-

40

$0.496

$0.456

$0.428

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Aztec Data Supply Inc.

USA . 309 parts In-Stock

1+ parts

$1.170

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309

$1.170

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Modulus Dynamics

Lithuania . 18,514 parts In-Stock

1+ parts

$1.396

100+ parts

$1.396

1k+ parts

$1.396

10k+ parts

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18,514

$1.396

$1.396

$1.396

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Corohmni

South Africa . 519 parts In-Stock

1+ parts

$1.484

100+ parts

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519

$1.484

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Metaverse IC Inc.

Canada . 111,000 parts In-Stock

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Lixinc

USA . 15,272 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,075 parts In-Stock

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Perfect Parts

USA . 2,137 parts In-Stock

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2,137

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 505 parts In-Stock

1+ parts

-

100+ parts

$0.494

1k+ parts

$0.422

10k+ parts

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505

-

$0.494

$0.422

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Overview

Discover the power and efficiency of the DMPH6050SFGQ-7 by Diodes Incorporated, a leading manufacturer in the industry. This P-Channel Power FET offers reliable switching performance with a built-in diode, perfect for a variety of applications. With a 60V breakdown voltage and 32A pulsed drain current, this transistor ensures optimal performance in enhancement mode operation. Experience the value and benefits of this high-quality product, designed to meet your power management needs with precision and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package makes this FET durable and resistant to external elements, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for efficient switching applications, making it ideal for power management in various electronic devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the functionality of this FET, providing additional protection against reverse currents and voltage spikes.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast and reliable performance, making it suitable for controlling power flow in different circuits.

Surface Mount: YES

The surface mount capability of this FET simplifies the assembly process, making it easy to integrate into compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle high voltages, making it suitable for applications requiring robust power management.

Package Shape: SQUARE

The square package shape provides a compact form factor, allowing for space-efficient mounting on PCBs or other electronic components.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the connection process, enabling easy installation and maintenance of the FET in electronic circuits.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control over the FET's conductivity, optimizing power efficiency and performance in various applications.

Maximum Pulsed Drain Current (IDM): 32 A

With a maximum pulsed drain current of 32A, this FET can handle high current loads, making it suitable for power-hungry devices or systems.

Technical Specifications

Power Field Effect Transistors (FET) DMPH6050SFGQ-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

30.8 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

18 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

64.7 pF

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

2.8 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Reference Standard:

AEC-Q101; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMPH6050SFGQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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