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DMPH6023SK3-13

Diodes Incorporated

DMPH6023SK3-13 by Diodes Incorporated

DMPH6023SK3-13 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 3.2W Power Dissipation, and -55 to 175°C Operating Temperature range. The METAL-OXIDE SEMICONDUCTOR technology ensures reliable performance in various electronic systems.

Median Price

$0.830

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,976 parts In-Stock

1+ parts

$1.280

100+ parts

$0.751

1k+ parts

$0.554

10k+ parts

-

2,976

$1.280

$0.751

$0.554

-

DigiKey

USA . 1,311 parts In-Stock

1+ parts

$1.380

100+ parts

$0.577

1k+ parts

$0.410

10k+ parts

$0.316

1,311

$1.380

$0.577

$0.410

$0.316

Mouser Electronics

USA . 113 parts In-Stock

1+ parts

$1.380

100+ parts

$0.578

1k+ parts

$0.411

10k+ parts

$0.360

113

$1.380

$0.578

$0.411

$0.360

Avnet

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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5,000

-

-

-

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Farnell

UK . 3,206 parts In-Stock

1+ parts

-

100+ parts

$0.486

1k+ parts

$0.348

10k+ parts

$0.319

3,206

-

$0.486

$0.348

$0.319

Element14

Singapore . 3,206 parts In-Stock

1+ parts

-

100+ parts

$0.830

1k+ parts

$0.674

10k+ parts

-

3,206

-

$0.830

$0.674

-

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.319

2,500

-

-

-

$0.319

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.319

2,500

-

-

-

$0.319

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

19

$0.410

-

-

-

Vyrian

USA . 4,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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4,263

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,961 parts In-Stock

1+ parts

$0.268

100+ parts

-

1k+ parts

-

10k+ parts

-

3,961

$0.268

-

-

-

Corohmni

South Africa . 112 parts In-Stock

1+ parts

$0.354

100+ parts

-

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112

$0.354

-

-

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Argo Parts USA

USA . 2,915 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

$0.398

2,915

$0.410

-

-

$0.398

Continental Prestige Electronics

USA . 662 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

$0.402

662

$0.410

-

-

$0.402

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.410

100+ parts

$0.402

1k+ parts

-

10k+ parts

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100

$0.410

$0.402

-

-

Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$1.057

100+ parts

$0.962

1k+ parts

$0.867

10k+ parts

-

10

$1.057

$0.962

$0.867

-

Robosynatics

Brazil . 18,483 parts In-Stock

1+ parts

-

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18,483

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-

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Lucentia Tech

USA . 18,483 parts In-Stock

1+ parts

-

100+ parts

$1.136

1k+ parts

$1.113

10k+ parts

$1.113

18,483

-

$1.136

$1.113

$1.113

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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3,000

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Overview

Unleash the power of modern technology with the DMPH6023SK3-13 by Diodes Incorporated. This high-quality P-Channel Power Field Effect Transistor is built to deliver top-notch performance in switching applications. With a maximum pulsed drain current of 60A and a minimum DS breakdown voltage of 60V, this transistor is designed for efficiency and reliability. Whether you're looking to optimize power management or enhance circuit designs, this transistor offers the value, benefits, and advantages that customers need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer low on-resistance and high current carrying capability, making them suitable for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the circuit from reverse voltage spikes, ensuring reliable performance in demanding environments.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast and efficient switching performance.

Maximum Pulsed Drain Current (IDM): 60 A

High pulsed drain current rating allows for reliable operation in high-power applications where surge currents may occur.

Avalanche Energy Rating (EAS): 60 mJ

The high avalanche energy rating ensures the FET can withstand energy spikes and transients, increasing overall reliability.

Maximum Power Dissipation (Abs): 3.2 W

With a high power dissipation rating, this FET can handle power dissipation efficiently, reducing the need for additional cooling mechanisms.

Maximum Operating Temperature: 175 °C

The high operating temperature range allows for reliable operation in a wide range of environmental conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption, making this FET an energy-efficient choice.

Maximum Drain-Source On Resistance: 0.033 ohm

Low on-resistance leads to reduced power losses and improved efficiency in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) DMPH6023SK3-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

60 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

7.3 A

Maximum Drain-Source On Resistance:

.033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

143 pF

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMPH6023SK3-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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