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DMP4013LFG-7

Diodes Incorporated

DMP4013LFG-7 by Diodes Incorporated

DMP4013LFG-7 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage and 80A IDM for switching applications. It operates in enhancement mode, has 0.013 ohm RDS(on), and can handle up to 2.1W power dissipation. Ideal for high-power surface mount designs requiring efficient switching capabilities at temperatures ranging from -55°C to 150°C.

Median Price

$0.544

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,701 parts In-Stock

1+ parts

$1.750

100+ parts

$0.738

1k+ parts

$0.580

10k+ parts

-

14,701

$1.750

$0.738

$0.580

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Newark

USA . 2,000 parts In-Stock

1+ parts

-

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$0.545

2,000

-

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$0.545

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.378

10k+ parts

$0.326

2,000

-

-

$0.378

$0.326

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.542

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-

10k+ parts

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2,000

-

$0.542

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 24 parts In-Stock

1+ parts

$0.398

100+ parts

$0.207

1k+ parts

$0.193

10k+ parts

$0.173

24

$0.398

$0.207

$0.193

$0.173

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.406

100+ parts

-

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150

$0.406

-

-

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TME

Poland . 1,607 parts In-Stock

1+ parts

$1.380

100+ parts

$0.637

1k+ parts

$0.472

10k+ parts

$0.439

1,607

$1.380

$0.637

$0.472

$0.439

Vyrian

USA . 82,568 parts In-Stock

1+ parts

-

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82,568

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Chip Stock

USA . 72,500 parts In-Stock

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72,500

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Cyclops Electronics Ltd

UK . 70,867 parts In-Stock

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70,867

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IBS Electronics

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

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$1.087

32,000

-

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$1.087

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

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Rutronik

Germany . 4,000 parts In-Stock

1+ parts

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$0.360

4,000

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$0.360

Semtec, LLC

USA . 116 parts In-Stock

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116

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 19,549 parts In-Stock

1+ parts

$0.235

100+ parts

$0.229

1k+ parts

$0.228

10k+ parts

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19,549

$0.235

$0.229

$0.228

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Ampacity Inc.

Singapore . 82,761 parts In-Stock

1+ parts

$0.259

100+ parts

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82,761

$0.259

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.398

100+ parts

-

1k+ parts

$0.382

10k+ parts

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500

$0.398

-

$0.382

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Argo Parts USA

USA . 2,277 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

$0.394

2,277

$0.406

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-

$0.394

Aztec Data Supply Inc.

USA . 3,240 parts In-Stock

1+ parts

$0.540

100+ parts

-

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3,240

$0.540

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Modulus Dynamics

Lithuania . 7,344 parts In-Stock

1+ parts

$0.987

100+ parts

$0.987

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$0.987

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7,344

$0.987

$0.987

$0.987

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Corohmni

South Africa . 988 parts In-Stock

1+ parts

$1.347

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988

$1.347

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.144

100+ parts

$1.951

1k+ parts

$1.758

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1,000

$2.144

$1.951

$1.758

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Lixinc

USA . 13,362 parts In-Stock

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13,362

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Formix International (Excess)

India . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,434 parts In-Stock

1+ parts

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$0.504

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$0.321

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$0.318

4,434

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$0.504

$0.321

$0.318

iodParts Technologies Inc.

India . 4,154 parts In-Stock

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4,154

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Perfect Parts

USA . 3 parts In-Stock

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3

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Overview

Unleash the power of innovation with the DMP4013LFG-7 by Diodes Incorporated, a cutting-edge P-Channel Power Field Effect Transistor designed to revolutionize your switching applications. Crafted with precision using top-of-the-line materials and advanced technology, this transistor offers unparalleled performance and reliability. Say goodbye to limitations and embrace limitless possibilities with the DMP4013LFG-7. Trust in Diodes Incorporated to deliver excellence that exceeds expectations, providing you with the tools you need to take your projects to new heights. Embrace the future of technology with the DMP4013LFG-7 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliable performance and durability.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel FETs are preferred, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the FET package, saving space and reducing component count.

Transistor Application: SWITCHING

Optimized for efficient switching applications, providing fast response times and low power dissipation.

Surface Mount: YES

Ideal for compact PCB designs and automated assembly processes, improving overall product reliability.

Minimum DS Breakdown Voltage: 40 V

Suitable for applications requiring higher voltage handling capabilities, enhancing the versatility of the product.

Maximum Pulsed Drain Current (IDM): 80 A

Capable of handling high current pulses, making it suitable for demanding applications with transient loads.

Maximum Power Dissipation (Abs): 2.1 W

Efficiently dissipates heat under normal operating conditions, ensuring reliable performance and longevity.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for harsh industrial environments.

Maximum Drain-Source On Resistance: 0.013 ohm

Low on-resistance leads to minimal power loss and heat generation, improving overall efficiency.

Technical Specifications

Power Field Effect Transistors (FET) DMP4013LFG-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

58 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

10.3 A

Maximum Drain-Source On Resistance:

.013 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

235 pF

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4013LFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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