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DMP4065S-13

Diodes Incorporated

DMP4065S-13 by Diodes Incorporated

DMP4065S-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 20A IDM, 0.08 ohm RDS(on), and -55 to 150°C operating range. Suitable for surface mount designs due to its GULL WING terminals and small outline package style.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 16,965 parts In-Stock

1+ parts

$0.460

100+ parts

$0.178

1k+ parts

$0.118

10k+ parts

$0.082

16,965

$0.460

$0.178

$0.118

$0.082

Mouser Electronics

USA . 44,160 parts In-Stock

1+ parts

$0.540

100+ parts

$0.211

1k+ parts

$0.159

10k+ parts

-

44,160

$0.540

$0.211

$0.159

-

Avnet

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

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80,000

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-

-

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Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.067

10,000

-

-

-

$0.067

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.067

10,000

-

-

-

$0.067

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.113

100+ parts

-

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-

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10

$0.113

-

-

-

IBS Electronics

USA . 160,000 parts In-Stock

1+ parts

$0.224

100+ parts

$0.212

1k+ parts

$0.195

10k+ parts

$0.194

160,000

$0.224

$0.212

$0.195

$0.194

Chip Stock

USA . 491,100 parts In-Stock

1+ parts

-

100+ parts

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491,100

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NAC Semi

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

$0.101

120,000

-

-

-

$0.101

Vyrian

USA . 71,033 parts In-Stock

1+ parts

-

100+ parts

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71,033

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Sensible Micro Corp

USA . 18,802 parts In-Stock

1+ parts

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18,802

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Distributors (Availability)

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Semicontronic

India . 70,607 parts In-Stock

1+ parts

$0.054

100+ parts

$0.053

1k+ parts

$0.052

10k+ parts

-

70,607

$0.054

$0.053

$0.052

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Ampacity Inc.

Singapore . 70,330 parts In-Stock

1+ parts

$0.054

100+ parts

-

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70,330

$0.054

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Continental Prestige Electronics

USA . 5,202 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

$0.111

5,202

$0.113

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-

$0.111

Argo Parts USA

USA . 1,900 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

$0.109

1,900

$0.113

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-

$0.109

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.115

100+ parts

$0.115

1k+ parts

$0.115

10k+ parts

-

200

$0.115

$0.115

$0.115

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Aztec Data Supply Inc.

USA . 4,738 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

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4,738

$0.740

-

-

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Corohmni

South Africa . 27 parts In-Stock

1+ parts

$1.540

100+ parts

-

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10k+ parts

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27

$1.540

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Overview

Unlock the power of the DMP4065S-13 by Diodes Incorporated, a high-quality P-CHANNEL Power Field Effect Transistor designed for switching applications. With a robust single configuration and built-in diode, this transistor offers enhanced performance and reliability. Ideal for a variety of electronic devices, this surface mount transistor boasts a maximum drain current of 2.4 A and a low on-resistance of 0.08 ohm, ensuring efficient operation. Trust in Diodes Incorporated's industry-leading technology to deliver the value and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a lightweight and durable construction, making it ideal for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer lower resistance and higher efficiency compared to N-channel FETs, making them a preferred choice for certain circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

This configuration simplifies the circuit design by incorporating a diode within the FET package, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast response times and high efficiency, making it suitable for power control and regulation.

Surface Mount: YES

With surface mount capability, this FET is easy to integrate onto circuit boards, saving space and simplifying the overall assembly process.

Minimum DS Breakdown Voltage: 40 V

The high minimum breakdown voltage ensures reliable performance and protection against voltage spikes in various power applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and mounting on circuit boards, maximizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form offers secure and reliable connections, enhancing the overall durability and longevity of the FET.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control and modulation of the FET's conductivity, offering flexibility in various circuit designs.

Maximum Pulsed Drain Current (IDM): 20 A

With a high maximum pulsed drain current, this FET can handle large current surges, making it suitable for high-power applications.

Technical Specifications

Power Field Effect Transistors (FET) DMP4065S-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4065S-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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