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DMP4025SFGQ-7

Diodes Incorporated

DMP4025SFGQ-7 by Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.95 W; Terminal Finish: MATTE TIN; No. of Terminals: 8;

Median Price

$0.197

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,262,000 parts In-Stock

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-

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$0.197

2,262,000

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$0.197

Distributors (In-Stock)

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Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$0.267

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87

$0.267

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Vyrian

USA . 616,658 parts In-Stock

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616,658

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NAC Semi

USA . 212,000 parts In-Stock

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$0.305

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$0.305

Chip Stock

USA . 23,110 parts In-Stock

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VRG Components

USA . 108 parts In-Stock

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108

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Distributors (Availability)

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Semicontronic

India . 757,190 parts In-Stock

1+ parts

$0.167

100+ parts

$0.163

1k+ parts

$0.162

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-

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$0.167

$0.163

$0.162

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Ampacity Inc.

Singapore . 628,283 parts In-Stock

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$0.167

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Aranea Global

USA . 100 parts In-Stock

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$0.262

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$0.251

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100

$0.262

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Continental Prestige Electronics

USA . 5,681 parts In-Stock

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$0.267

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$0.262

5,681

$0.267

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$0.262

Argo Parts USA

USA . 3,517 parts In-Stock

1+ parts

$0.267

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$0.259

3,517

$0.267

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$0.259

Aztec Data Supply Inc.

USA . 2,260 parts In-Stock

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$1.410

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2,260

$1.410

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Advanced Electronics

New Zealand . 550 parts In-Stock

1+ parts

$1.577

100+ parts

$1.498

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$1.498

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550

$1.577

$1.498

$1.498

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Corohmni

South Africa . 475 parts In-Stock

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$1.582

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$1.582

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QUARKTWIN TECHNOLOGY LTD

USA . 24,014 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 10,812 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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Eastek

USA . 2,000 parts In-Stock

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2,000

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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2,000

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Technical Specifications

Power Field Effect Transistors (FET) DMP4025SFGQ-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

4.65 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

128 pF

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Reference Standard:

AEC-Q101; IATF 16949

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4025SFGQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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