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DMP4047SK3-13

Diodes Incorporated

DMP4047SK3-13 by Diodes Incorporated

DMP4047SK3-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 20A ID, and 0.045 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Features include 40A IDM, 16mJ EAS, and ENHANCEMENT MODE operation in a SMALL OUTLINE package.

Median Price

$0.619

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,500 parts In-Stock

1+ parts

$0.619

100+ parts

$0.371

1k+ parts

$0.235

10k+ parts

$0.234

2,500

$0.619

$0.371

$0.235

$0.234

DigiKey

USA . 27,911 parts In-Stock

1+ parts

$1.060

100+ parts

$0.429

1k+ parts

$0.299

10k+ parts

-

27,911

$1.060

$0.429

$0.299

-

Mouser Electronics

USA . 6,531 parts In-Stock

1+ parts

$1.060

100+ parts

$0.430

1k+ parts

$0.331

10k+ parts

-

6,531

$1.060

$0.430

$0.331

-

Newark

USA . 1,795 parts In-Stock

1+ parts

$1.090

100+ parts

$0.442

1k+ parts

$0.308

10k+ parts

-

1,795

$1.090

$0.442

$0.308

-

Verical

USA . 110,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.197

110,000

-

-

-

$0.197

Future Electronics

Canada . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.515

2,500

-

-

-

$0.515

Element14

Singapore . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.363

1k+ parts

$0.230

10k+ parts

$0.229

2,500

-

$0.363

$0.230

$0.229

Arrow

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5

-

-

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Distributors (In-Stock)

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Nova Conductors

Japan . 69 parts In-Stock

1+ parts

$0.277

100+ parts

-

1k+ parts

-

10k+ parts

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69

$0.277

-

-

-

TME

Poland . 1,144 parts In-Stock

1+ parts

$0.990

100+ parts

$0.398

1k+ parts

$0.278

10k+ parts

$0.218

1,144

$0.990

$0.398

$0.278

$0.218

IBS Electronics

USA . 32,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.554

32,500

-

-

-

$0.554

Vyrian

USA . 24,599 parts In-Stock

1+ parts

-

100+ parts

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24,599

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-

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Chip Stock

USA . 21,734 parts In-Stock

1+ parts

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21,734

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.964

5,000

-

-

-

$0.964

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 24,938 parts In-Stock

1+ parts

$0.167

100+ parts

$0.163

1k+ parts

$0.162

10k+ parts

-

24,938

$0.167

$0.163

$0.162

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Ampacity Inc.

Singapore . 24,647 parts In-Stock

1+ parts

$0.167

100+ parts

-

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-

10k+ parts

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24,647

$0.167

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

$0.261

10k+ parts

-

1,000

$0.272

-

$0.261

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Argo Parts USA

USA . 2,181 parts In-Stock

1+ parts

$0.277

100+ parts

-

1k+ parts

-

10k+ parts

$0.269

2,181

$0.277

-

-

$0.269

Continental Prestige Electronics

USA . 2,145 parts In-Stock

1+ parts

$0.277

100+ parts

-

1k+ parts

-

10k+ parts

$0.272

2,145

$0.277

-

-

$0.272

Corohmni

South Africa . 722 parts In-Stock

1+ parts

$0.278

100+ parts

-

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722

$0.278

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Perfect Parts

USA . 16,801 parts In-Stock

1+ parts

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16,801

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GreenTree Electronics

Israel . 7,500 parts In-Stock

1+ parts

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7,500

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iodParts Technologies Inc.

India . 7,398 parts In-Stock

1+ parts

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7,398

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Robosynatics

Brazil . 7,149 parts In-Stock

1+ parts

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7,149

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Lucentia Tech

USA . 7,149 parts In-Stock

1+ parts

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100+ parts

$0.272

1k+ parts

$0.267

10k+ parts

$0.267

7,149

-

$0.272

$0.267

$0.267

Eastek

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.230

10k+ parts

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5,000

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-

$0.230

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Lixinc

USA . 4,687 parts In-Stock

1+ parts

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4,687

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Overview

Unleash the power of innovation with the DMP4047SK3-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Power Field Effect Transistors that are versatile and reliable. Ideal for switching applications, this P-Channel transistor offers enhanced performance and efficiency. With a maximum pulsed drain current of 40A and a minimum DS breakdown voltage of 40V, this transistor is a game-changer in the field. Trust Diodes Incorporated to provide you with cutting-edge technology that exceeds expectations and amplifies your projects to new heights. Elevate your designs with the DMP4047SK3-13 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high efficiency and low power consumption, making them ideal for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, enhancing the reliability of the FET in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in electronic circuits.

Surface Mount: YES

Surface-mount technology enables easy and convenient installation on PCBs, saving space and improving overall system performance.

Minimum DS Breakdown Voltage: 40 V

The high breakdown voltage ensures reliable operation in high voltage applications, offering protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, allowing for efficient placement on PCBs and saving space in electronic devices.

Terminal Form: GULL WING

Gull wing terminals make soldering easier and provide a secure connection, reducing the risk of disconnection in operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low on-state resistance, making them efficient for various switching applications.

Maximum Pulsed Drain Current (IDM): 40 A

The high pulsed drain current rating allows for handling of large current spikes, ensuring reliable performance in dynamic load conditions.

Avalanche Energy Rating (EAS): 16 mJ

The high avalanche energy rating indicates robustness against voltage spikes and transient events, protecting the FET from damage.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit design and reduces complexity in application, making it easy to integrate into electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, enabling compact and efficient system designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and performance in FETs, ensuring stable operation in various environments.

Transistor Element Material: SILICON

Silicon-based FETs provide good thermal stability and high switching speeds, making them suitable for a wide range of electronic applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides a corrosion-resistant surface, ensuring long-term reliability and performance in diverse operating conditions.

Maximum Drain Current (ID): 20 A

The high maximum drain current rating allows for handling of high current loads, making this FET suitable for power applications.

Maximum Drain-Source On Resistance: 0.045 ohm

The low on-resistance minimizes power loss and improves efficiency in switching applications, enhancing overall performance.

Terminal Position: SINGLE

A single terminal position simplifies installation and connection, reducing wiring complexity and ensuring easy integration into circuits.

Case Connection: DRAIN

The drain connection design enables efficient current flow and heat dissipation, ensuring stable performance under high load conditions.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable soldering during assembly, ensuring lasting connections in electronic systems.

Technical Specifications

Power Field Effect Transistors (FET) DMP4047SK3-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

16 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

40 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4047SK3-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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