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DMP45H150DHE-13

Diodes Incorporated

DMP45H150DHE-13 by Diodes Incorporated

DMP45H150DHE-13 by Diodes Inc. is a P-CHANNEL FET with 450V DS Breakdown Voltage, 0.45A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 13.9W Power Dissipation and -55 to 150°C Temperature Range.

Median Price

$0.129

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Future Electronics

Canada . 5,000 parts In-Stock

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$0.127

Verical

USA . 2,500 parts In-Stock

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$0.114

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Farnell

UK . 1,785 parts In-Stock

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$0.260

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$0.178

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$0.134

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$0.260

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$0.134

Element14

Singapore . 1,785 parts In-Stock

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$0.445

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$0.254

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$0.229

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RS (Exports)

UK . 600 parts In-Stock

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Chip Stock

USA . 6,825 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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$0.199

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IBS Electronics

USA . 5,000 parts In-Stock

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$0.421

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Ampacity Inc.

Singapore . 18,388 parts In-Stock

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$0.117

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Corohmni

South Africa . 254 parts In-Stock

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$0.629

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GreenTree Electronics

Israel . 27,500 parts In-Stock

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Lixinc

USA . 14,115 parts In-Stock

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Eastek

USA . 5,000 parts In-Stock

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$0.180

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Argo Parts USA

USA . 4,003 parts In-Stock

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Perfect Parts

USA . 2,800 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 892 parts In-Stock

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Overview

Experience the power of innovation with Diodes Incorporated's DMP45H150DHE-13 Power Field Effect Transistor. This P-Channel transistor offers reliable switching capabilities in a compact and efficient package. Ideal for various applications, this product provides enhanced performance and durability to meet your needs. Trust Diodes Incorporated for quality products that deliver value and benefits to customers seeking cutting-edge solutions. Elevate your projects with the DMP45H150DHE-13 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable for easy handling and long-lasting performance.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are efficient for low power applications and offer low on-resistance, making them suitable for various switching purposes.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects the transistor from reverse current flow, enhancing efficiency and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast response time and high performance in controlling power flow.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and enabling automated assembly processes.

Technical Specifications

Power Field Effect Transistors (FET) DMP45H150DHE-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

4 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

450 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1 pF

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

.45 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP45H150DHE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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