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DMN24H11DSQ-7

Diodes Incorporated

DMN24H11DSQ-7 by Diodes Incorporated

DMN24H11DSQ-7 by Diodes Inc. is a N-channel FET with 240V DS breakdown voltage, 0.27A max drain current, and 0.011 ohm max on resistance. Ideal for switching applications in small outline packages, operating from -55 to 150°C with AEC-Q101 compliance.

Median Price

$0.528

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,328 parts In-Stock

1+ parts

$0.760

100+ parts

$0.306

1k+ parts

$0.210

10k+ parts

$0.153

1,328

$0.760

$0.306

$0.210

$0.153

Newark

USA . 2,510 parts In-Stock

1+ parts

$0.783

100+ parts

$0.315

1k+ parts

$0.216

10k+ parts

-

2,510

$0.783

$0.315

$0.216

-

Mouser Electronics

USA . 269 parts In-Stock

1+ parts

$0.900

100+ parts

$0.381

1k+ parts

$0.266

10k+ parts

-

269

$0.900

$0.381

$0.266

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.117

3,000

-

-

-

$0.117

Farnell

UK . 2,915 parts In-Stock

1+ parts

-

100+ parts

$0.295

1k+ parts

$0.161

10k+ parts

$0.157

2,915

-

$0.295

$0.161

$0.157

Element14

Singapore . 2,915 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.187

10k+ parts

$0.174

2,915

-

$0.291

$0.187

$0.174

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 86 parts In-Stock

1+ parts

$0.192

100+ parts

-

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-

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86

$0.192

-

-

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Vyrian

USA . 5,430 parts In-Stock

1+ parts

-

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5,430

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PC Components Company LLC

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

-

-

-

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Bristol Electronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,878 parts In-Stock

1+ parts

$0.099

100+ parts

$0.097

1k+ parts

$0.096

10k+ parts

-

4,878

$0.099

$0.097

$0.096

-

Continental Prestige Electronics

USA . 2,606 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

-

10k+ parts

$0.189

2,606

$0.192

-

-

$0.189

Argo Parts USA

USA . 1,787 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

-

10k+ parts

$0.187

1,787

$0.192

-

-

$0.187

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.192

100+ parts

$0.189

1k+ parts

-

10k+ parts

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100

$0.192

$0.189

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Ampacity Inc.

Singapore . 4,828 parts In-Stock

1+ parts

$0.216

100+ parts

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4,828

$0.216

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Corohmni

South Africa . 943 parts In-Stock

1+ parts

$0.762

100+ parts

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943

$0.762

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Aztec Data Supply Inc.

USA . 176 parts In-Stock

1+ parts

$1.410

100+ parts

-

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176

$1.410

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Authorized Procurement Solutions

USA . 65,000 parts In-Stock

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65,000

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QUARKTWIN TECHNOLOGY LTD

USA . 5,924 parts In-Stock

1+ parts

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5,924

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

1+ parts

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3,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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Overview

Enhance your electronic designs with the DMN24H11DSQ-7 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal field effect transistors that are ideal for switching applications. With N-channel polarity and a single configuration with built-in diode, this transistor offers enhanced performance and reliability. Its high DS breakdown voltage of 240V and low drain-source on resistance of 0.011 ohm ensure efficient operation, while its compact design and surface mount capability make it easy to integrate into your projects. Trust Diodes Incorporated to provide you with the cutting-edge technology you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection to the internal components of the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel type transistors have better performance and efficiency compared to P-Channel transistors, making this product suitable for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps in protecting the transistor from voltage spikes and reverse current flow, increasing the overall circuit protection and efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low on-resistance, making it ideal for power management in various electronic devices.

Surface Mount: YES

Surface-mount compatibility allows for easy and efficient assembly on printed circuit boards, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 240 V

With a high breakdown voltage, this transistor can handle high voltage applications without the risk of damage, ensuring safe and reliable operation.

Maximum Operating Temperature: 150 °C

Operating at a high temperature range makes this transistor suitable for various industrial and automotive applications, where temperature fluctuations are common.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN24H11DSQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.1 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN24H11DSQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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