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DMN2004VK-7

Diodes Incorporated

DMN2004VK-7 by Diodes Incorporated

DMN2004VK-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode with 2 elements and built-in diode. Suitable for surface mount technology, it has a max operating temp of 150°C.

Median Price

$0.101

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 13 parts In-Stock

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$0.610

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$0.241

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$0.162

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13

$0.610

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Mouser Electronics

USA . 123 parts In-Stock

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$0.810

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$0.289

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$0.227

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123

$0.810

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$0.227

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Future Electronics

Canada . 69,000 parts In-Stock

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$0.088

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$0.088

Arrow

USA . 6,000 parts In-Stock

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$0.101

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Verical

USA . 6,000 parts In-Stock

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$0.101

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$0.101

Distributors (In-Stock)

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Vyrian

USA . 779,232 parts In-Stock

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NAC Semi

USA . 138,000 parts In-Stock

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$0.143

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$0.143

IBS Electronics

USA . 51,000 parts In-Stock

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$0.105

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$0.105

Cyclops Electronics Ltd

UK . 15,007 parts In-Stock

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Chip Stock

USA . 4,500 parts In-Stock

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4,500

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Conversion2

USA . 3,000 parts In-Stock

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SPM Sales

USA . 2,089 parts In-Stock

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2,089

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Bristol Electronics

USA . 1,000 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Sensible Micro Corp

USA . 300 parts In-Stock

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300

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Distributors (Availability)

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Ampacity Inc.

Singapore . 779,346 parts In-Stock

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$0.060

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779,346

$0.060

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Semicontronic

India . 256,255 parts In-Stock

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$0.067

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$0.065

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$0.065

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$0.067

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$0.065

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.316

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$0.300

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$0.300

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70

$0.316

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$0.300

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Corohmni

South Africa . 2 parts In-Stock

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$0.362

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$0.362

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Aztec Data Supply Inc.

USA . 4,175 parts In-Stock

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$1.600

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$1.600

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Futuretech Components

Singapore . 600,000 parts In-Stock

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Perfect Parts

USA . 25,434 parts In-Stock

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Lixinc

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Kepictronics

USA . 4,794 parts In-Stock

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Argo Parts USA

USA . 4,271 parts In-Stock

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Continental Prestige Electronics

USA . 3,672 parts In-Stock

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Assy Fe

Spain . 2,700 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the DMN2004VK-7 from Diodes Incorporated. As a leader in small signal Field Effect Transistors, Diodes Incorporated delivers unparalleled quality and reliability. Ideal for switching applications, this N-channel transistor offers enhanced performance and efficiency. With a maximum drain current of 0.54A and a low on-resistance of 0.55 ohm, this transistor is designed to exceed expectations. Trust Diodes Incorporated to provide innovative solutions that meet your needs and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers better control over the flow of current, enhancing the transistor's performance in switching applications.

Minimum DS Breakdown Voltage: 20 V

Can handle higher voltages, providing reliability in different circuit scenarios.

Maximum Drain Current (Abs) (ID): 0.54 A

Capable of handling moderate current levels, making it suitable for switching applications.

Maximum Power Dissipation (Abs): 0.25 W

Efficiently dissipates heat, ensuring stable operation under different load conditions.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature environments without performance degradation.

Maximum Drain-Source On Resistance: 0.55 ohm

Low on-resistance minimizes power losses and improves efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN2004VK-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.54 A

Maximum Drain Current (ID):

.54 A

Maximum Drain-Source On Resistance:

.55 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN2004VK-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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