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ADA114YUQ-7

Diodes Incorporated

ADA114YUQ-7 by Diodes Incorporated

ADA114YUQ-7 by Diodes Inc. is a PNP BJT with 2 elements, built-in resistor, and hFE of 68. It operates b/w -55 to 150°C, with VCE max of 50V and IC max of 0.1A. Ideal for automotive electronics due to AEC-Q101 compliance and high transition frequency of 250MHz.

Median Price

$0.360

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.360

100+ parts

$0.140

1k+ parts

$0.092

10k+ parts

$0.066

3,000

$0.360

$0.140

$0.092

$0.066

Mouser Electronics

USA . 2,929 parts In-Stock

1+ parts

$0.360

100+ parts

$0.090

1k+ parts

$0.081

10k+ parts

$0.056

2,929

$0.360

$0.090

$0.081

$0.056

Verical

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

66,000

-

-

-

$0.049

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 728 parts In-Stock

1+ parts

$1.667

100+ parts

-

1k+ parts

-

10k+ parts

-

728

$1.667

-

-

-

Northwest PG Solutions

USA . 1,704 parts In-Stock

1+ parts

$1.834

100+ parts

-

1k+ parts

-

10k+ parts

-

1,704

$1.834

-

-

-

Lixinc

USA . 17,058 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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17,058

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-

-

-

iodParts Technologies Inc.

India . 3,389 parts In-Stock

1+ parts

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100+ parts

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3,389

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,000

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Overview

Experience the superior performance and reliability of the ADA114YUQ-7 by Diodes Incorporated, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers unmatched quality and efficiency with its PNP polarity, separate configuration, and built-in resistor. Perfect for a wide range of applications, this transistor provides customers with exceptional value, benefits, and advantages. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for greater design flexibility and convenience.

Surface Mount: YES

Enables easy and convenient mounting on a circuit board.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring lower voltage operation.

Minimum DC Current Gain (hFE): 68

Provides consistent and reliable amplification.

Nominal Transition Frequency (fT): 250 MHz

High-frequency operation for faster switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADA114YUQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949, MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADA114YUQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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