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ADA114EUQ-7

Diodes Incorporated

ADA114EUQ-7 by Diodes Incorporated

ADA114EUQ-7 by Diodes Inc. is a PNP BJT with 2 elements, built-in resistor, hFE of 30, VCE of 50V, and IC of 0.1A. It's in a small outline package suitable for surface mount applications. Ideal for high-frequency designs with a transition frequency of 250MHz.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5 parts In-Stock

1+ parts

$0.320

100+ parts

$0.124

1k+ parts

$0.076

10k+ parts

$0.051

5

$0.320

$0.124

$0.076

$0.051

DigiKey

USA . 2,985 parts In-Stock

1+ parts

$0.360

100+ parts

$0.126

1k+ parts

$0.076

10k+ parts

-

2,985

$0.360

$0.126

$0.076

-

Verical

USA . 87,000 parts In-Stock

1+ parts

-

100+ parts

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$0.041

87,000

-

-

-

$0.041

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.379

100+ parts

$0.345

1k+ parts

$0.311

10k+ parts

-

100

$0.379

$0.345

$0.311

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Native Components

USA . 814 parts In-Stock

1+ parts

$0.602

100+ parts

-

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814

$0.602

-

-

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Northwest PG Solutions

USA . 1,124 parts In-Stock

1+ parts

$0.662

100+ parts

-

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1,124

$0.662

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Corohmni

South Africa . 314 parts In-Stock

1+ parts

$0.869

100+ parts

-

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314

$0.869

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Overview

Enhance your electronic designs with the ADA114EUQ-7 from Diodes Incorporated, a leading manufacturer known for top-quality components. This PNP Small Signal Bipolar Junction Transistor offers reliability and performance in a compact package, making it ideal for a wide range of applications. With built-in resistors and a high transition frequency of 250 MHz, this transistor delivers value and efficiency to customers looking for dependable solutions. Upgrade your projects with the ADA114EUQ-7 and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors, expanding the versatility of the product.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making the transistor more convenient to use.

Surface Mount: YES

The surface mount capability enables easy and efficient assembly onto circuit boards, streamlining the manufacturing process.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, optimizing space usage in electronic devices.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor provides stable and predictable amplification performance in various applications.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for safe operation in circuits requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties, ensuring reliable and consistent performance of the transistor.

Maximum Collector Current (IC): 0.1 A

This transistor can handle a maximum collector current of 0.1 A, suitable for low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and robust connection, enhancing the overall quality and longevity of the product.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250 MHz, this transistor offers high-speed performance in signal switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ADA114EUQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ADA114EUQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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