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.36 W Small Signal Field Effect Transistors (FET) 23

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSS119L6327HTSA1 by Infineon Technologies

BSS119L6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SILICON

BSS84PL6327HTSA1 by Infineon Technologies

BSS84PL6327HTSA1

Infineon Technologies

BSS84PL6327HTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode. With a max drain current of 0.17A and on-resistance of 12 ohm, it offers reliable performance in small outline packages at temperatures up to 150°C.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

60 V

.17 A

.17 A

12 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.36 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSS119E6433 by Infineon Technologies

BSS119E6433

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

R-PDSO-G3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

YES

GULL WING

DUAL

SILICON

BSS670S2L by Infineon Technologies

BSS670S2L

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 55 V; Maximum Operating Temperature: 150 Cel;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

55 V

.54 A

.54 A

.825 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

40

SWITCHING

SILICON

BSS7728N by Infineon Technologies

BSS7728N

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain-Source On Resistance: 5 ohm;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.2 A

.2 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

4.4 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SILICON

NDS0610_NL by Fairchild Semiconductor

NDS0610_NL

Fairchild Semiconductor

NDS0610_NL by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.12 A

.12 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.36 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSS84P-E6327 by Infineon Technologies

BSS84P-E6327

Infineon Technologies

BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

60 V

.17 A

.17 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

R-PDSO-G3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.36 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

40

SWITCHING

SILICON

BSS139E6906 by Infineon Technologies

BSS139E6906

Infineon Technologies

Infineon's BSS139E6906 is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30 ohm RDS(on). Ideal for small signal applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in DEPLETION MODE, this transistor has a max temp of 150°C and 3.3pF Crss.

SINGLE WITH BUILT-IN DIODE

250 V

.1 A

.1 A

30 ohm

METAL-OXIDE SEMICONDUCTOR

3.3 pF

R-PDSO-G3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.36 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

BSS138NE6327 by Infineon Technologies

BSS138NE6327

Infineon Technologies

BSS138NE6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for small outline applications, it operates in enhancement mode with 3.5 ohm RDS(on) and 3.8pF Crss, meeting MIL-STD-883 standards at -55 to 150°C temperature range.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.8 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

.36 W

Not Qualified

MIL-STD-883

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SILICON

BSS138NE6433 by Infineon Technologies

BSS138NE6433

Infineon Technologies

BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.8 pF

R-PDSO-G3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

.36 W

Not Qualified

MIL-STD-883

FET General Purpose Power

YES

GULL WING

DUAL

SILICON

BSS159NE6327 by Infineon Technologies

BSS159NE6327

Infineon Technologies

BSS159NE6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A Drain Current, and 3.5 ohm On Resistance. Ideal for small signal applications in electronics due to its DEPLETION MODE operation and compact SMALL OUTLINE package style.

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

5.9 pF

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

BSS159NE6906 by Infineon Technologies

BSS159NE6906

Infineon Technologies

Infineon's BSS159NE6906 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A max drain current, and 3.5 ohm max on resistance. Ideal for small signal applications requiring low power dissipation in surface mount configurations.

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

5.9 pF

R-PDSO-G3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

SN7002NE6327 by Infineon Technologies

SN7002NE6327

Infineon Technologies

Infineon's SN7002NE6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS. Ideal for small signal applications, it features a built-in diode in a GULL WING package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, this MOSFET offers low feedback capacitance of 4.2pF.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.2 A

.2 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

4.2 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

SN7002NL6327 by Infineon Technologies

SN7002NL6327

Infineon Technologies

Infineon's SN7002NL6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS(ON). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.36W. The transistor features a built-in diode and can withstand temperatures up to 150°C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.2 A

.2 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

4.2 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SILICON

BSS131L6327HTSA1 by Infineon Technologies

BSS131L6327HTSA1

Infineon Technologies

Infineon's BSS131L6327HTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage. Operating in Enhancement Mode, it has 0.11A ID and 14 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and -55 to 150 °C operating range.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

240 V

.11 A

14 ohm

METAL-OXIDE SEMICONDUCTOR

4.2 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

BSS7728NL6327HTSA1 by Infineon Technologies

BSS7728NL6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.2 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

4.4 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

BSS138NL6327HTSA1 by Infineon Technologies

BSS138NL6327HTSA1

Infineon Technologies

Infineon's BSS138NL6327HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With 3.5 ohm Drain-Source On Resistance and 3.8 pF Feedback Capacitance, it meets AEC-Q101 standards for automotive use at temperatures ranging from -55 to 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

.36 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

BSS119L6433HTMA1 by Infineon Technologies

BSS119L6433HTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.36 W

YES

GULL WING

DUAL

SILICON

BSS138NE7854 by Infineon Technologies

BSS138NE7854

Infineon Technologies

BSS138NE7854 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. It is used in small outline packages for applications requiring low power dissipation, such as MIL-STD-883 compliant circuits.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

60 V

.23 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.36 W

.36 W

MIL-STD-883

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

BSS123-F169 by Onsemi

BSS123-F169

Onsemi

BSS123-F169 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 0.36W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

NDS0605-F169 by Onsemi

NDS0605-F169

Onsemi

NDS0605-F169 by Onsemi is a P-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.36W and can withstand temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.18 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.36 W

YES

GULL WING

DUAL

30

SWITCHING

SILICON

TP5335K1-G-VAO by Microchip Technology

TP5335K1-G-VAO

Microchip Technology

Microchip TP5335K1-G-VAO is a P-CHANNEL FET with 350V DS Breakdown Voltage, 0.36W Power Dissipation, and 70 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its ENHANCEMENT MODE operation and small outline package.

SINGLE WITH BUILT-IN DIODE

350 V

.085 A

70 ohm

METAL-OXIDE SEMICONDUCTOR

2 pF

TO-236AB

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.36 W

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

DMN65D8LT-7 by Diodes Incorporated

DMN65D8LT-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;

SINGLE WITH BUILT-IN DIODE

60 V

.21 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.36 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON