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ROHM Small Signal Bipolar Junction Transistors (BJT) 83

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SD1760TLQ by ROHM

2SD1760TLQ

ROHM

ROHM 2SD1760TLQ is a NPN BJT transistor with max. power dissipation of 15W and max. collector current of 3A. Ideal for switching applications, it has a min. DC current gain of 120 (hFE) and operates up to 150°C. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

GULL WING

SINGLE

10

SWITCHING

SILICON

90 MHz

2SD1664T100Q by ROHM

2SD1664T100Q

ROHM

ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

UMC4NTR by ROHM

UMC4NTR

ROHM

ROHM UMC4NTR is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. Features include VCEsat of 0.3V, hFE of 68, and fT of 250MHz. With a max operating temperature of 150°C, it has a collector-emitter voltage of 50V and collector current of 0.03A.

BUILT IN BIAS RESISTOR RATIO 1

.03 A

50 V

CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G5

e2

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN COPPER

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

.3 V

MMST2222AT146 by ROHM

MMST2222AT146

ROHM

ROHM MMST2222AT146 is a NPN BJT transistor for switching applications. Features include VCEsat of 0.6V, hFE of 40, and IC of 0.6A. With a max operating temperature of 150°C, it has a transition frequency of 300MHz making it suitable for high-speed switching circuits.

.6 A

7 pF

40 V

SINGLE

40

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

285 ns

35 ns

.6 V

MMST3904T146 by ROHM

MMST3904T146

ROHM

ROHM MMST3904T146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.2A. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz). Suitable for surface mount designs in small outline packages.

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

.3 V

MMSTA06T146 by ROHM

MMSTA06T146

ROHM

ROHM MMSTA06T146 is a NPN BJT transistor with VCEsat of 0.25V, hFE of 100, and IC of 0.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Features gull wing terminals in a plastic/epoxy body for surface mount assembly.

.5 A

80 V

SINGLE

100

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

100 MHz

.25 V

EMD9FHAT2R by ROHM

EMD9FHAT2R

ROHM

ROHM EMD9FHAT2R is a Small Signal BJT with NPN and PNP types. It has 2 elements with built-in resistor for switching applications. Features include hFE of 68, VCE of 50V, IC of 0.1A, fT of 250MHz. Suitable for surface mount in automotive electronics due to AEC-Q101 compliance.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-F6

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

UMD22NFHATR by ROHM

UMD22NFHATR

ROHM

ROHM UMD22NFHATR is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It's ideal for switching applications, featuring 80 min hFE, 50V VCEO, and 250MHz fT. Package: SOT-363, surface mount Gull Wing terminals.

BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e2

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

TIN COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

UML6NTR by ROHM

UML6NTR

ROHM

ROHM's UML6NTR is a NPN BJT with built-in diode for switching applications. It has 5 terminals, max power dissipation of 0.12W, and max collector current of 0.5A. With a transition frequency of 320MHz, it operates at up to 150°C and has a max collector-emitter voltage of 12V.

.5 A

12 V

SINGLE WITH BUILT-IN DIODE

270

R-PDSO-G5

e2

1

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.12 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

320 MHz

UMF6NTR by ROHM

UMF6NTR

ROHM

ROHM's UMF6NTR is a PNP BJT transistor with 270 min hFE, 260 MHz fT, and 0.5 A IC. Ideal for switching applications, it has a max operating temperature of 150°C and a package style of small outline.

BUILT IN 2SA2018 AND 2SK3019

.5 A

12 V

SINGLE WITH BUILT-IN FET AND DIODE

270

R-PDSO-G6

e2

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

DUAL

SWITCHING

SILICON

260 MHz

DTA114TMT2L by ROHM

DTA114TMT2L

ROHM

ROHM's DTA114TMT2L is a PNP BJT with built-in resistor for switching applications. Features include 100 min hFE, 50V VCEO, and 250MHz fT. Its small outline package and surface mount capability make it ideal for compact electronic designs.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

DTC123EMT2L by ROHM

DTC123EMT2L

ROHM

ROHM's DTC123EMT2L is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and nominal transition frequency of 250MHz. Ideal for surface mount designs in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

VT6X1T2R by ROHM

VT6X1T2R

ROHM

ROHM's VT6X1T2R is a NPN BJT with 2 elements, ideal for switching applications. It has a max power dissipation of 0.15W, hFE of 120, and fT of 400MHz. With a max collector-emitter voltage of 20V and max collector current of 0.2A, it operates up to 150°C making it suitable for various electronic designs.

.2 A

20 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

400 MHz

DTC124EEBTL by ROHM

DTC124EEBTL

ROHM

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-F3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

2SA1038STPR by ROHM

2SA1038STPR

ROHM

ROHM 2SA1038STPR is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 180, suitable for amplifier applications due to its high transition frequency of 140MHz and power dissipation of 0.3W.

.05 A

120 V

SINGLE

180

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

2SA1038STPS by ROHM

2SA1038STPS

ROHM

ROHM 2SA1038STPS is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 270, suitable for amplifier applications with a nominal transition frequency of 140MHz.

.05 A

120 V

SINGLE

270

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

140 MHz

QSL12TR by ROHM

QSL12TR

ROHM

ROHM QSL12TR is a NPN BJT with 5 terminals, 0.5W power dissipation, and 270 min hFE. Ideal for switching applications, it has a max operating temp of 125°C and can handle up to 1A collector current. The transistor's package is surface mountable with Gull Wing terminals in a small outline shape.

1 A

30 V

SINGLE WITH BUILT-IN DIODE

270

R-PDSO-G5

e1

1

1

5

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

320 MHz

QSX2TR by ROHM

QSX2TR

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 5 A;

5 A

30 V

SINGLE

270

R-PDSO-G6

e1

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

2SD2705STP by ROHM

2SD2705STP

ROHM

ROHM's 2SD2705STP is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 820, and fT of 35MHz. Ideal for amplifier applications due to its single configuration and max. collector current of 0.3A at an operating temp of up to 150°C in a cylindrical package with through-hole terminals.

.3 A

20 V

SINGLE

820

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.3 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

35 MHz

2SCR514PT100 by ROHM

2SCR514PT100

ROHM

ROHM 2SCR514PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.7A. It has a min. DC current gain of 120, suitable for switching applications in small outline packages at up to 150°C operating temperature.

COLLECTOR

.7 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

2SCR554PT100 by ROHM

2SCR554PT100

ROHM

ROHM's 2SCR554PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 120 and nominal transition frequency of 300MHz, it offers high performance in a small outline package suitable for surface mount technology.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2SAR533PT100 by ROHM

2SAR533PT100

ROHM

ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.

COLLECTOR

3 A

50 V

SINGLE

180

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2SCR512PT100 by ROHM

2SCR512PT100

ROHM

ROHM 2SCR512PT100 is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 2A. It has a min. DC current gain of 200, making it ideal for switching applications at up to 150°C operating temperature. The small outline package with flat terminals and surface mount capability enhances its versatility in various electronic designs.

COLLECTOR

2 A

30 V

SINGLE

200

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

320 MHz

BA12003BF-E2 by ROHM

BA12003BF-E2

ROHM

Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NOT SPECIFIED

NOT SPECIFIED

BA12004BF-E2 by ROHM

BA12004BF-E2

ROHM

Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

NOT SPECIFIED

NOT SPECIFIED

2SAR554P5T100 by ROHM

2SAR554P5T100

ROHM

ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.

COLLECTOR

1.5 A

15 pF

80 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

TIN

FLAT

SINGLE

10

SWITCHING

SILICON

340 MHz

.4 V

2SCR372P5T100R by ROHM

2SCR372P5T100R

ROHM

ROHM 2SCR372P5T100R is a NPN BJT transistor with hFE of 180, suitable for amplifier applications. It has a max VCE of 120V and IC of 0.7A. With a fT of 220MHz, it operates up to 150°C making it ideal for high-frequency amplification in compact designs.

COLLECTOR

.7 A

120 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

10

AMPLIFIER

SILICON

220 MHz

BC857BHZGT116 by ROHM

BC857BHZGT116

ROHM

ROHM BC857BHZGT116 is a PNP BJT transistor with hFE of 210, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mounting. AEC-Q101 certified, suitable for automotive electronics requiring high reliability.

.1 A

45 V

SINGLE

210

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

BCX19HZGT116 by ROHM

BCX19HZGT116

ROHM

ROHM BCX19HZGT116 is a NPN BJT transistor with hFE of 40, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 250MHz. Features Gull Wing terminals in a small outline package suitable for surface mount assembly.

.5 A

45 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

DTC144EMFHAT2L by ROHM

DTC144EMFHAT2L

ROHM

ROHM DTC144EMFHAT2L is a NPN BJT with built-in resistor, ideal for switching applications. Features include hFE of 68, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in automotive electronics.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-F3

e2

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

AEC-Q101

BIP General Purpose Small Signal

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

UMH2NFHATN by ROHM

UMH2NFHATN

ROHM

ROHM UMH2NFHATN is a NPN BJT with 2 elements & built-in resistor. It has hFE of 68, VCE of 50V, and fT of 250MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and Gull Wing terminals for surface mounting.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

DTC114YU3T106 by ROHM

DTC114YU3T106

ROHM

ROHM DTC114YU3T106 is a NPN BJT with built-in resistor for switching applications. It has hFE of 68, VCE of 50V, and fT of 250MHz. The transistor comes in a small outline package with Gull Wing terminals made of silicon material.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

EMH25FHAT2R by ROHM

EMH25FHAT2R

ROHM

ROHM's EMH25FHAT2R is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features include PLASTIC/EPOXY body, surface mount compatibility, and AEC-Q101 standard compliance.

BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BA12003DF-ZE2 by ROHM

BA12003DF-ZE2

ROHM

ROHM's BA12003DF-ZE2 is a NPN BJT transistor with 1000 min hFE, 60V max VCE, and 0.5A max IC. Ideal for switching applications in small outline packages, featuring GULL WING terminals and SILICON material.

.5 A

60 V

COMPLEX

1000

R-PDSO-G16

7

16

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SA1774E3HZGTLQ by ROHM

2SA1774E3HZGTLQ

ROHM

ROHM 2SA1774E3HZGTLQ is a PNP BJT transistor with VCEsat of 0.5V, hFE of 120, and fT of 140MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V. AEC-Q101 compliant, suitable for automotive electronics requiring high reliability.

.15 A

5 pF

50 V

SINGLE

120

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101

YES

GULL WING

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V