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YES Small Signal Bipolar Junction Transistors (BJT) 1,507

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCR119SH6433XTMA1 by Infineon Technologies

BCR119SH6433XTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

120

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

BFN26E6433HTMA1 by Infineon Technologies

BFN26E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;

.2 A

300 V

SINGLE

30

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

70 MHz

DTC114YU3T106 by ROHM

DTC114YU3T106

ROHM

ROHM DTC114YU3T106 is a NPN BJT with built-in resistor for switching applications. It has hFE of 68, VCE of 50V, and fT of 250MHz. The transistor comes in a small outline package with Gull Wing terminals made of silicon material.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCX5316H6433XTMA1 by Infineon Technologies

BCX5316H6433XTMA1

Infineon Technologies

BCX5316H6433XTMA1 by Infineon is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 1A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 125MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

125 MHz

BCW66KHB6327HTLA1 by Infineon Technologies

BCW66KHB6327HTLA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.8 A

45 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

AC857CWQ-7 by Diodes Incorporated

AC857CWQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

HIGH RELIABILITY

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

ADTA143XUAQ-13 by Diodes Incorporated

ADTA143XUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA143ZUAQ-13 by Diodes Incorporated

ADTA143ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SILICON

250 MHz

ADTC114YUAQ-13 by Diodes Incorporated

ADTC114YUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143TUAQ-13 by Diodes Incorporated

ADTC143TUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTOR;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143ZUAQ-13 by Diodes Incorporated

ADTC143ZUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC846BPN-AU_R1_000A1 by Panjit International

BC846BPN-AU_R1_000A1

Panjit International

BC846BPN-AU_R1_000A1 by Panjit Int. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and Gull Wing terminals. Ideal for amplifier applications, it has hFE of 200, VCE of 65V, and fT of 100MHz. AEC-Q101 compliant with temp range -55 to 150°C, it's a versatile choice for compact designs needing high gain and frequency performance.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

EMH25FHAT2R by ROHM

EMH25FHAT2R

ROHM

ROHM's EMH25FHAT2R is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features include PLASTIC/EPOXY body, surface mount compatibility, and AEC-Q101 standard compliance.

BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BCR08PNE6327BTSA1 by Infineon Technologies

BCR08PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR08PNE6433HTMA1 by Infineon Technologies

BCR08PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR22PNE6433HTMA1 by Infineon Technologies

BCR22PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

3 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

130 MHz

.3 V

AC847BWQ-13 by Diodes Incorporated

AC847BWQ-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

ACX114EUQ-13R by Diodes Incorporated

ACX114EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ACX143ZUQ-13R by Diodes Incorporated

ACX143ZUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143TUQ-13 by Diodes Incorporated

ADC143TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143ZUQ-13 by Diodes Incorporated

ADC143ZUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

MMDT4401Q-7-F by Diodes Incorporated

MMDT4401Q-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

BC857BW-G by Comchip Technology

BC857BW-G

Comchip Technology

BC857BW-G by Comchip Technology is a PNP BJT with max power dissipation of 0.15W, hFE of 220, and fT of 100MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

.1 A

SINGLE

220

e3

1

150 Cel

260

PNP

.15 W

Other Transistors

YES

TIN

10

100 MHz

ADTA114ECAQ-13 by Diodes Incorporated

ADTA114ECAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY;

BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTC143TCAQ-7 by Diodes Incorporated

ADTC143TCAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

SDBN500B01-7 by Diodes Incorporated

SDBN500B01-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

MATTE TIN

30

100 MHz

BA12003DF-ZE2 by ROHM

BA12003DF-ZE2

ROHM

ROHM's BA12003DF-ZE2 is a NPN BJT transistor with 1000 min hFE, 60V max VCE, and 0.5A max IC. Ideal for switching applications in small outline packages, featuring GULL WING terminals and SILICON material.

.5 A

60 V

COMPLEX

1000

R-PDSO-G16

7

16

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ZXTP2009ZQTA by Diodes Incorporated

ZXTP2009ZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 152 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 5.5 A;

HIGH RELIABILITY

COLLECTOR

5.5 A

53 pF

40 V

SINGLE

110

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.1 W

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

152 MHz

.185 V

ADTA113ZCAQ-7 by Diodes Incorporated

ADTA113ZCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZUAQ-13 by Diodes Incorporated

ADTA113ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZUAQ-7 by Diodes Incorporated

ADTA113ZUAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ACX115EUQ-13R by Diodes Incorporated

ACX115EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 82;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ACX115EUQ-7R by Diodes Incorporated

ACX115EUQ-7R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADA123JUQ-13 by Diodes Incorporated

ADA123JUQ-13

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADA123JUQ-7 by Diodes Incorporated

ADA123JUQ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC113TUQ-13 by Diodes Incorporated

ADC113TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC113TUQ-7 by Diodes Incorporated

ADC113TUQ-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC857BW-HF by Comchip Technology

BC857BW-HF

Comchip Technology

BC857BW-HF by Comchip Technology is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 220, and IC of 0.1A, it operates at a max temperature of 150°C. Its small outline package with GULL WING terminals makes it suitable for compact electronic designs.

.1 A

4.5 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.15 W

.15 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

.65 V

SMMJT350T3G by Onsemi

SMMJT350T3G

Onsemi

SMMJT350T3G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 2.75W power dissipation suitable for switching applications. It comes in a small outline package with Gull Wing terminals, operating b/w -55 °C to 150°C. Ideal for automotive electronics due to AEC-Q101 compliance.

COLLECTOR

.5 A

300 V

SINGLE

20

TO-261AA

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

2.75 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ZXPD4000DH-7 by Diodes Incorporated

ZXPD4000DH-7

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;

2 A

120 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

S-PDSO-N8

e4

1

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

.9 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

AMPLIFIER

SILICON

1.5 V

BC847QAPN,147 by Nexperia

BC847QAPN,147

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;

COLLECTOR

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

BC857CQA,147 by Nexperia

BC857CQA,147

Nexperia

BC857CQA,147 by Nexperia is a PNP BJT transistor with hFE of 420. It has VCE of 45V and IC of 0.1A, suitable for switching applications. This SOT23-3 packaged transistor operates at a transition frequency of 100MHz, conforming to AEC-Q101 and IEC-60134 standards.

COLLECTOR

.1 A

45 V

SINGLE

420

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

PBHV8515QA,147 by Nexperia

PBHV8515QA,147

Nexperia

Nexperia's PBHV8515QA,147 is a NPN BJT transistor with max. Vce of 150V and Ic of 0.5A. With hFE of 35 and fT of 75MHz, it's ideal for switching applications in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

.5 A

150 V

SINGLE

35

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

75 MHz

PDTA114EQA,147 by Nexperia

PDTA114EQA,147

Nexperia

Nexperia's PDTA114EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. This small outline transistor has a transition frequency of 180MHz and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA123JQA,147 by Nexperia

PDTA123JQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 21

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143EQA,147 by Nexperia

PDTA143EQA,147

Nexperia

Nexperia's PDTA143EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 180MHz. This transistor has a plastic/epoxy body, is surface mountable, and has tin finish terminals.

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143XQA,147 by Nexperia

PDTA143XQA,147

Nexperia

Nexperia's PDTA143XQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 50, VCE of 50V, and fT of 180MHz. Its small outline package makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

BUILT IN BIAS RESISTANCE RATIO IS 2.1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PDTA143ZQA,147 by Nexperia

PDTA143ZQA,147

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN;

BUILT IN BIAS RESISTANCE RATIO IS 10

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz