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.625 W Small Signal Bipolar Junction Transistors (BJT) 161

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSA06RLG by Onsemi

MPSA06RLG

Onsemi

MPSA06RLG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high transition frequency of 100MHz and max. operating temp. of 150 °C in a cylindrical package style.

EUROPEAN PART NUMBER

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

MPSA18G by Onsemi

MPSA18G

Onsemi

MPSA18G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A. With a min DC current gain of 500, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.

LOW NOISE

.2 A

45 V

SINGLE

500

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

160 MHz

MPSA18RLRMG by Onsemi

MPSA18RLRMG

Onsemi

MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.

LOW NOISE

.2 A

45 V

SINGLE

500

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

160 MHz

MPSA56RLRPG by Onsemi

MPSA56RLRPG

Onsemi

MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSA56ZL1G by Onsemi

MPSA56ZL1G

Onsemi

MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.

EUROPEAN PART NUMBER

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

MPSA70RLRMG by Onsemi

MPSA70RLRMG

Onsemi

MPSA70RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for amplifier applications due to its cylindrical package style, it operates at up to 150 °C and has a nominal transition frequency of 125MHz.

.1 A

40 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

125 MHz

P2N2222AG by Onsemi

P2N2222AG

Onsemi

P2N2222AG by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and hFE of 75. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

300 MHz

285 ns

35 ns

P2N2222AZL1G by Onsemi

P2N2222AZL1G

Onsemi

P2N2222AZL1G by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. Ideal for amplifier applications due to its max. collector-emitter voltage of 40V and nominal transition frequency of 300MHz.

EUROPEAN PART NUMBER

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

300 MHz

285 ns

35 ns

PN2907ARLRAG by Onsemi

PN2907ARLRAG

Onsemi

PN2907ARLRAG by Onsemi is a PNP BJT with hFE of 50, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring high-speed switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Tin Silver Copper.

.6 A

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

100 ns

45 ns

BC487BG by Onsemi

BC487BG

Onsemi

BC487BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. It has a min. DC current gain of 160 and max. power dissipation of 0.625W, suitable for high-frequency operations up to 200MHz in cylindrical package style.

.5 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

MPS5172G by Onsemi

MPS5172G

Onsemi

MPS5172G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 100, and VCE of 25V. Ideal for low-power applications in electronics due to its small package size and high DC current gain.

.1 A

25 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

MPS8599RLRMG by Onsemi

MPS8599RLRMG

Onsemi

MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.

.5 A

80 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

150 MHz

MPSA12G by Onsemi

MPSA12G

Onsemi

MPSA12G by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its configuration and terminal form.

20 V

DARLINGTON

20000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

MPS4250ARLRMG by Onsemi

MPS4250ARLRMG

Onsemi

MPS4250ARLRMG by Onsemi is a PNP BJT with hFE of 250, VCEO of 40V, and Ptot of 0.625W. Ideal for low-power applications in electronics due to its small size and high gain characteristics. Suitable for use in various electronic circuits requiring a single configuration transistor.

40 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

DSS5240Y-7 by Diodes Incorporated

DSS5240Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 2 A;

2 A

40 V

SINGLE

100

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

220 MHz

DSS9110Y-7 by Diodes Incorporated

DSS9110Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;

1 A

100 V

SINGLE

125

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC337-25RLRAG by Onsemi

BC337-25RLRAG

Onsemi

BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.

.8 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz