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.25 W RF Small Signal Field Effect Transistors (FET) 13

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BF545B,215 by NXP Semiconductors

BF545B,215

NXP Semiconductors

BF545B,215 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, this transistor comes in a PLASTIC/EPOXY package with GULL WING terminals.

SINGLE

30 V

JUNCTION

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF510,215 by NXP Semiconductors

BF510,215

NXP Semiconductors

The NXP Semiconductors BF510,215 is an N-CHANNEL RF FET with a DEPLETION MODE operating mode. It has a 20V DS breakdown voltage and operates in the VERY HIGH FREQUENCY BAND. Ideal for AMPLIFIER applications, this transistor has a max power dissipation of 0.25W and can handle a max drain current of 0.03A.

LOW NOISE

SINGLE

20 V

.03 A

JUNCTION

.4 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF511,215 by NXP Semiconductors

BF511,215

NXP Semiconductors

BF511,215 by NXP Semiconductors is an N-CHANNEL RF FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a max power dissipation of 0.25 W. Ideal for AMPLIFIER applications due to its small outline package style and GULL WING terminal form.

LOW NOISE

SINGLE

20 V

.03 A

JUNCTION

.4 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF512,215 by NXP Semiconductors

BF512,215

NXP Semiconductors

The NXP Semiconductors BF512,215 is a single N-channel RF FET with a 20V DS breakdown voltage. Operating in depletion mode, it offers very high frequency band performance for amplifier applications. With a max power dissipation of 0.25W and operating temperature up to 150°C, this transistor features a small outline package suitable for surface mount assembly.

LOW NOISE

SINGLE

20 V

.03 A

JUNCTION

.4 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF513,215 by NXP Semiconductors

BF513,215

NXP Semiconductors

The NXP Semiconductors BF513,215 is a single N-channel RF FET with a max power dissipation of 0.25W and operating temperature of 150°C. Ideal for amplifier applications in the very high frequency band, it features a min DS breakdown voltage of 20V and terminal finish in Tin (Sn).

LOW NOISE

SINGLE

20 V

.03 A

JUNCTION

.4 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF545A,215 by NXP Semiconductors

BF545A,215

NXP Semiconductors

NXP Semiconductors BF545A,215 is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND. Features include SINGLE configuration, DEPLETION MODE operation, and 150°C max temp.

SINGLE

30 V

JUNCTION

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF545C,215 by NXP Semiconductors

BF545C,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Finish: TIN; Qualification: Not Qualified;

SINGLE

30 V

JUNCTION

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF556A,215 by NXP Semiconductors

BF556A,215

NXP Semiconductors

BF556A,215 by NXP Semiconductors is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 30V DS Breakdown Voltage and can handle up to 0.25W power dissipation. This SMALL OUTLINE transistor has a max operating temperature of 150°C and is designed for VERY HIGH FREQUENCY BAND usage.

SINGLE

30 V

JUNCTION

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF556B,215 by NXP Semiconductors

BF556B,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; JESD-609 Code: e3;

SINGLE

30 V

JUNCTION

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF556C,215 by NXP Semiconductors

BF556C,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;

SINGLE

30 V

JUNCTION

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

PMBFJ308,215 by NXP Semiconductors

PMBFJ308,215

NXP Semiconductors

NXP Semiconductors' PMBFJ308,215 is an N-CHANNEL RF FET for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 25V DS Breakdown Voltage and handles VERY HIGH FREQUENCY BAND signals. With GULL WING terminals and a SMALL OUTLINE package style, it can dissipate up to 0.25W at 150°C.

LOW NOISE

SINGLE

25 V

JUNCTION

2.5 pF

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

PMBFJ309,215 by NXP Semiconductors

PMBFJ309,215

NXP Semiconductors

NXP Semiconductors' PMBFJ309,215 is an N-CHANNEL RF FET for AMPLIFIER applications. Features include 25V DS Breakdown Voltage, VERY HIGH FREQUENCY BAND operation, and 2.5pF Crss feedback capacitance. The PLASTIC/EPOXY package with GULL WING terminals supports surface mount installation.

LOW NOISE

SINGLE

25 V

JUNCTION

2.5 pF

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

PMBFJ310,215 by NXP Semiconductors

PMBFJ310,215

NXP Semiconductors

PMBFJ310,215 by NXP Semiconductors is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 25V DS Breakdown Voltage and 2.5pF Feedback Capacitance at a max power dissipation of 0.25W in a SMALL OUTLINE package style.

LOW NOISE

SINGLE

25 V

JUNCTION

2.5 pF

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON