Loading...

5000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 17

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFR92WH6327XTSA1 by Infineon Technologies

BFR92WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .045 A; Package Style (Meter): SMALL OUTLINE;

.045 A

.6 pF

15 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

5000 MHz

BFG25A/X,215 by NXP Semiconductors

BFG25A/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .0065 A; Maximum Collector-Emitter Voltage: 5 V;

COLLECTOR

.0065 A

.3 pF

5 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

5000 MHz

BFG31,115 by NXP Semiconductors

BFG31,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

5000 MHz

BFG590,215 by NXP Semiconductors

BFG590,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

COLLECTOR

.2 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.65 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

5000 MHz

BFG590/X,215 by NXP Semiconductors

BFG590/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

COLLECTOR

.2 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.65 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

5000 MHz

BFQ149,115 by NXP Semiconductors

BFQ149,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

20

C BAND

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5000 MHz

BFR106,215 by NXP Semiconductors

BFR106,215

NXP Semiconductors

NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.

LOW NOISE

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92A,215 by NXP Semiconductors

BFR92A,215

NXP Semiconductors

NXP Semiconductors' BFR92A,215 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.35 W and operates up to 175°C. Ideal for L Band applications, this transistor offers high gain (hFE=40) and low collector current (IC=0.025 A).

LOW NOISE

.025 A

15 V

SINGLE

40

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92AW,115 by NXP Semiconductors

BFR92AW,115

NXP Semiconductors

NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR93AW,115 by NXP Semiconductors

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

HIGH RELIABILITY

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFS25A,115 by NXP Semiconductors

BFS25A,115

NXP Semiconductors

NXP Semiconductors' BFS25A,115 is a NPN RF BJT transistor with 5000 MHz fT. It has a max power dissipation of 0.032 W and operates at up to 175°C. Ideal for L Band applications like amplifiers due to its small outline package and high transition frequency.

LOW NOISE, HIGH RELIABILITY

.0065 A

.45 pF

5 V

SINGLE

50

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.032 W

.032 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT25A,215 by NXP Semiconductors

BFT25A,215

NXP Semiconductors

NXP Semiconductors' BFT25A,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 5000 MHz and hFE of 50, suitable for amplifier applications. The transistor has a max power dissipation of 0.032 W and can handle a collector-emitter voltage of 5V.

HIGH RELIABILITY

.0065 A

.45 pF

5 V

SINGLE

50

L BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.032 W

.032 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.

LOW NOISE

.025 A

15 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT93,215 by NXP Semiconductors

BFT93,215

NXP Semiconductors

NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.

LOW NOISE

.035 A

12 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92AW,135 by NXP Semiconductors

BFR92AW,135

NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.

HIGH RELIABILITY

.025 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR92A,235 by NXP Semiconductors

BFR92A,235

NXP Semiconductors

NXP Semiconductors' BFR92A,235 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications in L Band due to its small outline package and high transition frequency.

LOW NOISE

.025 A

15 V

SINGLE

65

L BAND

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

2SC5004-T1-A by Renesas Electronics

2SC5004-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .06 A;

.06 A

1.2 pF

12 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e6

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

Tin/Bismuth (Sn/Bi)

GULL WING

DUAL

AMPLIFIER

SILICON

5000 MHz

.5 V