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.1 A RF Small Signal Bipolar Junction Transistors (BJT) 29

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BSR12,215 by NXP Semiconductors

BSR12,215

NXP Semiconductors

BSR12,215 by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max collector current of 0.1 A, operates up to 150 °C, and supports frequencies in the S band with a nominal transition frequency of 1500 MHz. Its compact surface mount design ensures efficient performance in electronic circuits.

.1 A

4.5 pF

15 V

SINGLE

30

S BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

1500 MHz

NESG2101M05-A by Renesas Electronics

NESG2101M05-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;

.1 A

130

1

NPN

.5 W

BIP RF Small Signal

YES

SILICON GERMANIUM

NESG2101M05-T1-A by Renesas Electronics

NESG2101M05-T1-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;

.1 A

130

1

NPN

.5 W

BIP RF Small Signal

YES

SILICON GERMANIUM

2SC5509-A by Renesas Electronics

2SC5509-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13000 MHz; Maximum Power Dissipation (Abs): .19 W; Maximum Collector Current (IC): .1 A;

.1 A

SINGLE

50

1

150 Cel

NPN

.19 W

Other Transistors

YES

13000 MHz

BFP196WE6327HTSA1 by Infineon Technologies

BFP196WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 4;

COLLECTOR

.1 A

1.4 pF

12 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

7500 MHz

BFU690F,115 by NXP Semiconductors

BFU690F,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .23 W; Maximum Collector Current (IC): .1 A;

LOW NOISE

.1 A

5.5 V

SINGLE

90

KA BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.23 W

BIP RF Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

18000 MHz

NE851M13-T3-A by Renesas Electronics

NE851M13-T3-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Power Dissipation (Abs): .14 W; Maximum Collector Current (IC): .1 A;

.1 A

.8 pF

5.5 V

SINGLE

100

L BAND

R-PDSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.14 W

Other Transistors

YES

FLAT

DUAL

AMPLIFIER

SILICON

6500 MHz

BFG198,115 by NXP Semiconductors

BFG198,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

10 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG31,115 by NXP Semiconductors

BFG31,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

5000 MHz

BFG97,115 by NXP Semiconductors

BFG97,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5500 MHz

BFQ149,115 by NXP Semiconductors

BFQ149,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

20

C BAND

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5000 MHz

BFQ19,115 by NXP Semiconductors

BFQ19,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

LOW NOISE

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

TO-243

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

.5 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5500 MHz

BFR106,215 by NXP Semiconductors

BFR106,215

NXP Semiconductors

NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.

LOW NOISE

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

PBR951,215 by NXP Semiconductors

PBR951,215

NXP Semiconductors

NXP Semiconductors PBR951,215 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 8 GHz and has a max power dissipation of 0.365 W. Ideal for amplifier applications, it can handle a max collector-emitter voltage of 10V at an operating temp of 175°C.

LOW NOISE, HIGH RELIABILITY

.1 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.365 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

PRF957,115 by NXP Semiconductors

PRF957,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Power Dissipation (Abs): .37 W; Maximum Collector Current (IC): .1 A;

LOW NOISE, HIGH RELIABILITY

.1 A

10 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.37 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8500 MHz

MPSH10RLRAG by Onsemi

MPSH10RLRAG

Onsemi

MPSH10RLRAG by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It has a max IC of 0.1A and Ptot of 0.35W, making it suitable for amplifier applications in the UHF band. The package is cylindrical with through-hole terminals and can operate up to 150°C.

.1 A

.7 pF

25 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

650 MHz

BF959ZL1G by Onsemi

BF959ZL1G

Onsemi

BF959ZL1G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and fT of 700MHz. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates in the very high-frequency band. This through-hole transistor has a min hFE of 35 and can handle up to 0.1A collector current.

EUROPEAN PART NUMBER

.1 A

20 V

SINGLE

35

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

700 MHz

BF959G by Onsemi

BF959G

Onsemi

BF959G by Onsemi is a NPN RF BJT with 3 terminals. It operates in the VHF band, has hFE of 35, and can handle up to 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 700MHz and max collector current of 0.1A.

.1 A

20 V

SINGLE

35

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

700 MHz

BF959RL1G by Onsemi

BF959RL1G

Onsemi

BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.

EUROPEAN PART NUMBER

.1 A

20 V

SINGLE

35

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

700 MHz

MPSH10G by Onsemi

MPSH10G

Onsemi

MPSH10G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max power dissipation of 0.35W and operates in the ultra-high frequency band.

.1 A

.7 pF

25 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

650 MHz

MPSH10RLRPG by Onsemi

MPSH10RLRPG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

.7 pF

25 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

650 MHz

BFG97,135 by NXP Semiconductors

BFG97,135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5500 MHz

2SC5455-A by Renesas Electronics

2SC5455-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

12000 MHz

2SC5455-T1-A by Renesas Electronics

2SC5455-T1-A

Renesas Electronics

2SC5455-T1-A by Renesas Electronics is an NPN RF BJT transistor with a max fT of 12 GHz. It has a collector-emitter voltage of 6V and a collector current of 0.1A, making it suitable for amplifier applications in the L band. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

LOW NOISE

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

12000 MHz

2SC5006-T1-A by Renesas Electronics

2SC5006-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .1 A; Additional Features: LOW NOISE;

LOW NOISE

.1 A

1.5 pF

12 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

4500 MHz

NE68833-T1-A by Renesas Electronics

NE68833-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Base Capacitance: .85 pF;

LOW NOISE

.1 A

.85 pF

6 V

SINGLE

C BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

8500 MHz

2SC5753-T2-A by Renesas Electronics

2SC5753-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-F4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

12000 MHz

2SC3356-T1B-R25-A by Renesas Electronics

2SC3356-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;

LOW NOISE

.1 A

1 pF

12 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

NE85633-T1B-R25-A by Renesas Electronics

NE85633-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1 pF

12 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz