Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BLF6G22S-45,112
NXP Semiconductors
BLF6G22S-45,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It features a max power dissipation of 2.5 W and operates up to 150 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
SINGLE
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
2.5 W
FET General Purpose Power
YES
IRF7807VD2TRPBF
International Rectifier
IRF7807VD2TRPBF by International Rectifier is a single N-channel power FET with a max drain current of 8.3A and max power dissipation of 2.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
8.3 A
e3
260
MATTE TIN
30
UPA2735GR-E1-AT
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED;
16 A
NOT SPECIFIED
P-CHANNEL
Other Transistors
UPA2736GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 14 A;
14 A
UPA2737GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 11 A;
11 A
UPA2738GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 10 A; Maximum Drain Current (Abs) (ID): 10 A;
10 A
NDT01N60T1G
Onsemi
Onsemi's NDT01N60T1G is a Power FET with 600V DS Breakdown Voltage, 1.5A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 2.5W in enhancement mode operation at temperatures up to 150 °C.
13 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
.4 A
8.5 ohm
TO-261AA
R-PDSO-G4
4
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
1.5 A
TIN
GULL WING
DUAL
SILICON
UPA2630T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: NICKEL PALLADIUM GOLD;
7 A
e4
NICKEL PALLADIUM GOLD
UPA2631T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
6 A
CSD15571Q2
Texas Instruments
CSD15571Q2 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a Max Pulsed Drain Current of 52A, Min DS Breakdown Voltage of 20V, and Max Drain Current of 22A. With an Operating Temperature range from -55 to 150 °C, it offers high performance in a SMALL OUTLINE package suitable for various electronic devices.
AVALANCHE RATED
18 mJ
20 V
22 A
.0192 ohm
42 pF
S-PDSO-N6
6
-55 Cel
SQUARE
52 A
NO LEAD
SWITCHING
IRF7413A
IRF7413A by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58A IDM, 260mJ EAS, and 0.0135 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
HIGH RELIABILITY
260 mJ
30 V
12 A
.0135 ohm
MS-012AA
R-PDSO-G8
e0
8
58 A
Not Qualified
TIN LEAD
STN2NE10L
STMicroelectronics
STN2NE10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 7.2A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 20mJ EAS rating. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount with DUAL terminal position.
LOW THRESHOLD
20 mJ
100 V
2 A
1.8 A
.45 ohm
7.2 A
STN2NE10
STN2NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 8A IDM, 20mJ EAS, and 0.4 ohm RDS(on). With a max operating temperature of 150 °C, it's suitable for various power management tasks in electronic devices.
.4 ohm
8 A
STS12NF30L
STS12NF30L by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 48A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in diode and operates at up to 150 °C.
.011 ohm
48 A
Nickel/Palladium/Gold (Ni/Pd/Au)
STS11NF30L
STS11NF30L by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 11 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
.019 ohm
44 A
BSO613SPV
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-30 Code: R-PDSO-G8; Peak Reflow Temperature (C): 235;
150 mJ
60 V
3.44 A
.13 ohm
235
13.8 A
STQ3N45K3-AP
STQ3N45K3-AP by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Max Pulsed Drain Current and 3.8 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150 °C.
450 V
.6 A
3.8 ohm
TO-92
O-PBCY-T3
3
ROUND
CYLINDRICAL
2.4 A
NO
THROUGH-HOLE
BOTTOM
STS9NF30L
STS9NF30L by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 36A IDM, and 0.035 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This 8-terminal transistor features GULL WING terminals and a SMALL OUTLINE package style.
9 A
.035 ohm
36 A
40
DMN3052LSS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; No. of Elements: 1;
7.1 A
.03 ohm
28 A
DMC3018LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .02 ohm;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
9.1 A
.02 ohm
2
N-CHANNEL AND P-CHANNEL
32 A
STN5PF02V
STN5PF02V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 4.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO package ensures easy surface mounting in various electronic devices.
4.2 A
.1 ohm
17 A
STS2DPF80
STS2DPF80 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features an 80V breakdown voltage, max drain current of 2A, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
80 V
.25 ohm
IRF7413QTRPBF
IRF7413QTRPBF by International Rectifier is a N-CHANNEL FET with 13A max drain current and 2.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various electronic devices requiring efficient power management in compact spaces.
13 A
IRF7495TR
IRF7495TR by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a built-in diode for SWITCHING applications, with 58A IDM and 0.022 ohm RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power electronic devices.
180 mJ
7.3 A
.022 ohm
245
Tin/Lead (Sn/Pb)
DMN3007LSS-13
DMN3007LSS-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 16A max drain current, and 0.007 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include 64A pulsed drain current, small outline package style, and matte tin terminal finish.
.007 ohm
64 A
FET General Purpose Powers
IRF7493TR
IRF7493TR by International Rectifier is a N-CHANNEL FET with 9.3A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling in surface mount configurations at up to 150°C operating temperature.
9.3 A
IRF7831TR
IRF7831TR by International Rectifier is a N-CHANNEL FET with 21A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This surface-mount transistor uses metal-oxide semiconductor technology and can handle up to 150°C operating temperature.
21 A
DMC3036LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR;
6.9 A
.036 ohm
24 A
DMP3035LSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;
.016 ohm
40 A
STS5PF30L
STS5PF30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage, 20A IDM, and 0.075 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates at up to 150°C.
5 A
.075 ohm
20 A
BSO4410
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 11.1 A; Transistor Element Material: SILICON;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
126 mJ
11.1 A
.013 ohm
44.5 A
BSO4420
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
230 mJ
.0078 ohm
BSO4822
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
165 mJ
12.7 A
.01 ohm
51 A
STS4NF100
STS4NF100 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
4 A
.07 ohm
STS6PF30L
STS6PF30L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 6 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
.042 ohm
STS7PF30L
STS7PF30L by STMicroelectronics is a P-CHANNEL FET with 30V DS breakdown voltage and 28A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.028 ohm max RDS(on), and operates in enhancement mode.
.028 ohm
DMN3031LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
.0185 ohm
STS5PF20V
STS5PF20V from STMicroelectronics is a P-channel FET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
STS9NH3LL
STS9NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
100 mJ
.025 ohm
STS12NH3LL
STS12NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 12 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
SI4880DY-T1-E3
Vishay Intertechnology
SI4880DY-T1-E3 by Vishay Intertechnology is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 50A IDM and 0.0085 ohm RDS(on). With a max power dissipation of 2.5W and operating temperature up to 150°C, it's suitable for various electronic designs.
.0085 ohm
50 A
IRF7471PBF
IRF7471PBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features a single configuration with built-in diode, ideal for switching applications. With a max IDM of 83A and EAS of 300mJ, it operates in enhancement mode at up to 150°C, making it suitable for high-power tasks.
300 mJ
40 V
83 A
IRF7471TRPBF
IRF7471TRPBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 83A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. This surface mount transistor has a max power dissipation of 2.5W and can handle up to 10A drain current.
IRF7492PBF
IRF7492PBF by International Rectifier is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 30A IDM and 0.079 ohm RDS(on), it operates in enhancement mode at temperatures ranging from -55 to 150°C.
130 mJ
200 V
3.7 A
.079 ohm
30 A
IRF7805APBF
IRF7805APBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 13A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.5W. Suitable for surface mount with GULL WING terminals, it can handle up to 100A pulsed drain current.
100 A
MMSF3P02HDR2G
The Onsemi MMSF3P02HDR2G is a P-CHANNEL FET with 20V DS Breakdown Voltage, 30A IDM, and 0.075 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.5W. Suitable for surface mount designs, it has a temperature range of -55 to 150 °C.
567 mJ
5.6 A
Matte Tin (Sn) - annealed
STS5N15F3
STS5N15F3 by STMicroelectronics is a N-CHANNEL FET with 150V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.057 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.
150 V
.057 ohm
FDS4465_F085
Fairchild Semiconductor
FDS4465_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage and 13.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures up to 175°C.
13.5 A
175 Cel
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