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2.5 W Power Field Effect Transistors (FET) 55

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRF7220-TRPBF by International Rectifier

IRF7220-TRPBF

International Rectifier

IRF7220-TRPBF by International Rectifier is a P-CHANNEL FET with 14V DS Breakdown Voltage and 88A IDM. Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 150°C.

110 mJ

SINGLE WITH BUILT-IN DIODE

14 V

11 A

14 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

88 A

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

SI4880DY-T1-GE3 by Vishay Intertechnology

SI4880DY-T1-GE3

Vishay Intertechnology

SI4880DY-T1-GE3 by Vishay Intertechnology is a N-channel Power FET with 30V DS breakdown voltage and 13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode.

SINGLE WITH BUILT-IN DIODE

30 V

13 A

13 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

2.5 W

50 A

FET General Purpose Powers

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

EFC3J018NUZTDG by Onsemi

EFC3J018NUZTDG

Onsemi

EFC3J018NUZTDG by Onsemi is a N-CHANNEL FET with COMMON DRAIN configuration, ideal for SWITCHING applications. It features 2 ELEMENTS with built-in DIODE and RESISTOR, operating in DEPLETION MODE. With a max power dissipation of 2.5W and max temperature of 150°C, it is suitable for various power management tasks.

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N6

2

6

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.5 W

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

DMT10H032LFVW-7 by Diodes Incorporated

DMT10H032LFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 100 V;

25.3 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

17 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

6.9 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.5 W

68 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT10H032LFVW-13 by Diodes Incorporated

DMT10H032LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Avalanche Energy Rating (EAS): 25.3 mJ; JESD-609 Code: e3;

25.3 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

17 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

6.9 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.5 W

68 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT10H032SFVW-13 by Diodes Incorporated

DMT10H032SFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Element Material: SILICON;

25.35 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

35 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.5 W

140 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMN3003LCA8-7 by Diodes Incorporated

DMN3003LCA8-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Reference Standard: MIL-STD-202; Package Style (Meter): CHIP CARRIER;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

.0051 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

R-XBCC-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.5 W

MIL-STD-202

YES

NO LEAD

BOTTOM

SWITCHING

SILICON