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1.25 W Power Field Effect Transistors (FET) 15

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AO3422L by Alpha & Omega Semiconductor

AO3422L

Alpha & Omega Semiconductor

AO3422L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 55V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.16 ohm Drain-Source On Resistance.

SINGLE WITH BUILT-IN DIODE

55 V

2.1 A

2.1 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

12.6 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.25 W

1.25 W

10 A

YES

GULL WING

DUAL

SWITCHING

SILICON

SSM3K316T(TE85L,F) by Toshiba

SSM3K316T(TE85L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.25 W

FET General Purpose Power

YES

SSM3K315T(TE85L,F) by Toshiba

SSM3K315T(TE85L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 6 A;

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.25 W

FET General Purpose Power

YES

TT8J11TCR by ROHM

TT8J11TCR

ROHM

ROHM's TT8J11TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 3.5A Drain Current, 0.043 ohm On Resistance. With small outline package and max temp of 150°C, it suits various electronic designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

3.5 A

3.5 A

.043 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.25 W

12 A

Other Transistors

YES

FLAT

DUAL

10

SWITCHING

SILICON

TT8J13TCR by ROHM

TT8J13TCR

ROHM

ROHM TT8J13TCR is a P-CHANNEL FET with 2 elements, built-in diode for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5A IDM, and 0.062 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and small outline package style.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

2.5 A

2.5 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.25 W

5 A

Other Transistors

YES

FLAT

DUAL

10

SWITCHING

SILICON

NSTR4501NT1G by Onsemi

NSTR4501NT1G

Onsemi

NSTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in automotive electronics due to AEC-Q101 compliance and high operating temperature of 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.25 W

10 A

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRLML5203 by International Rectifier

IRLML5203

International Rectifier

IRLML5203 by International Rectifier is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM and 0.098 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a PLASTIC/EPOXY body, GULL WING terminals, and built-in DIODE.

SINGLE WITH BUILT-IN DIODE

30 V

3 A

3 A

.098 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.25 W

24 A

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

BSP030,115 by NXP Semiconductors

BSP030,115

NXP Semiconductors

NXP Semiconductors' BSP030,115 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at 150°C max temp, it has 0.03 ohm Drain-Source On Resistance.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

10 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.25 W

40 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

STC6NF30V by STMicroelectronics

STC6NF30V

STMicroelectronics

STC6NF30V by STMicroelectronics is a versatile N-channel FET designed for switching applications. It features a max drain current of 6 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.

LOW THRESHOLD

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

6 A

6 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.25 W

24 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

NTR4501NT1 by Onsemi

NTR4501NT1

Onsemi

NTR4501NT1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max drain current of 3.2A, operating in enhancement mode with a max power dissipation of 1.25W. With a small outline package style and peak reflow temperature of 235 °C, it offers efficient performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.25 W

10 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

30

SWITCHING

SILICON

NTR4501NT3G by Onsemi

NTR4501NT3G

Onsemi

NTR4501NT3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in small outline packages where high power dissipation and low on-resistance are required.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.25 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTR4501NT3 by Onsemi

NTR4501NT3

Onsemi

NTR4501NT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for various power management tasks.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.25 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

RZQ050P01TR by ROHM

RZQ050P01TR

ROHM

ROHM RZQ050P01TR is a P-CHANNEL FET with 12V DS Breakdown Voltage, 5A Max ID, and 0.026 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it has 20A IDM and operates up to 150°C. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

12 V

5 A

5 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.25 W

20 A

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

RTQ040P02TR by ROHM

RTQ040P02TR

ROHM

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 16 A; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

20 V

4 A

4 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.25 W

16 A

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

RSQ045N03TR by ROHM

RSQ045N03TR

ROHM

ROHM's RSQ045N03TR is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 4.5A ID, 0.056ohm RDS(on), and 1.25W Power Dissipation in a SMALL OUTLINE package. Operating at up to 150°C, it suits ENHANCEMENT MODE requirements with GULL WING terminals for surface mount assembly.

SINGLE WITH BUILT-IN DIODE

30 V

4.5 A

4.5 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.25 W

18 A

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON