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50 MHz Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STF715 by STMicroelectronics

STF715

STMicroelectronics

STF715 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max collector-emitter voltage of 80V and a power dissipation of 1.4W. It operates efficiently at up to 150 °C with a min DC current gain (hFE) of 40. This compact surface mount transistor is ideal for various electronic circuits.

1.5 A

80 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

50 MHz

STN715 by STMicroelectronics

STN715

STMicroelectronics

STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.

COLLECTOR

1.5 A

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

MPSW42RLRAG by Onsemi

MPSW42RLRAG

Onsemi

MPSW42RLRAG by Onsemi is a NPN BJT with max VCEsat of 0.5V, hFE of 40, and max IC of 0.5A. Ideal for power applications in temperatures ranging from -55 to 150 °C, it features a collector-emitter voltage of 300V. Its through-hole package makes it suitable for various cylindrical power designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

BD788G by Onsemi

BD788G

Onsemi

BD788G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 15W power dissipation. Ideal for switching applications, it has a hFE of 5 and operates up to 150°C. The through-hole package style makes it suitable for various electronic designs.

4 A

60 V

SINGLE

5

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

15 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MJE172G by Onsemi

MJE172G

Onsemi

MJE172G by Onsemi is a PNP BJT transistor with 80V VCEO, 3A IC, and 1.5W power dissipation. Ideal for switching applications with a min hFE of 12 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.

3 A

80 V

SINGLE

12

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MJE180G by Onsemi

MJE180G

Onsemi

MJE180G by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1.5W power dissipation and 3A collector current. With a min hFE of 12, it's ideal for switching applications at temperatures up to 150°C. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic circuits.

3 A

40 V

SINGLE

12

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MPSW42G by Onsemi

MPSW42G

Onsemi

MPSW42G by Onsemi is a NPN BJT with 300V VCE, 0.5A IC, and 40 hFE. It is used in power applications due to its 2.5W Pdiss and -55 °C to 150°C operating temp range. The transistor's through-hole package makes it suitable for various cylindrical style designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

MPSW55G by Onsemi

MPSW55G

Onsemi

The Onsemi MPSW55G is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and max IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 60V. With a package style of cylindrical, it can dissipate up to 2.5W power in ambient temperatures up to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSW55RLRAG by Onsemi

MPSW55RLRAG

Onsemi

MPSW55RLRAG by Onsemi is a PNP BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications. It has a min hFE of 50 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and terminal finish of Tin Silver Copper, it operates b/w -55 to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

STF817A by STMicroelectronics

STF817A

STMicroelectronics

STF817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.4W and collector current of 1.5A. It operates up to 150 °C with an 80V collector-emitter voltage. Ideal for compact electronic designs due to its small outline package.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

50 MHz

STN817A by STMicroelectronics

STN817A

STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz