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20 MHz Power Bipolar Junction Transistors (BJT) 15

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STW1695 by STMicroelectronics

2STW1695

STMicroelectronics

2STW1695 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 100 W, operates up to 150 °C, and supports collector-emitter voltages of 140 V. Ideal for high-performance electronic circuits.

10 A

140 V

SINGLE

50

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

2STW4468 by STMicroelectronics

2STW4468

STMicroelectronics

2STW4468 by STMicroelectronics is an NPN BJT designed for amplifier applications. It features a max power dissipation of 100 W, a collector-emitter voltage of 140 V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

10 A

140 V

SINGLE

50

TO-247AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

20 MHz

2STA1694 by STMicroelectronics

2STA1694

STMicroelectronics

2STA1694 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Its robust design ensures reliable performance in various electronic circuits.

8 A

120 V

SINGLE

70

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STC2510 by STMicroelectronics

2STC2510

STMicroelectronics

2STC2510 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

2STC4467 by STMicroelectronics

2STC4467

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A;

8 A

120 V

SINGLE

70

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

20 MHz

2STW4466 by STMicroelectronics

2STW4466

STMicroelectronics

2STW4466 by STMicroelectronics is a powerful NPN BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for high-performance electronic circuits.

6 A

80 V

SINGLE

50

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STA1695 by STMicroelectronics

2STA1695

STMicroelectronics

2STA1695 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 100W, collector-emitter voltage of 140V, and operates up to 150 °C. Its through-hole design ensures easy integration into various electronic circuits.

10 A

140 V

SINGLE

50

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

20 MHz

2STC4468 by STMicroelectronics

2STC4468

STMicroelectronics

2STC4468 by STMicroelectronics is a NPN BJT transistor with 140V VCE, 10A IC, and 100W power dissipation. Ideal for amplifier applications due to its 20MHz fT, 50 hFE, and -55 to +150°C operating range. Packaged in plastic/epoxy with through-hole terminals for easy mounting.

10 A

140 V

SINGLE

50

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

20 MHz

2STW1693 by STMicroelectronics

2STW1693

STMicroelectronics

2STW1693 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Its robust design ensures reliable performance in demanding environments.

6 A

80 V

SINGLE

50

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STA2510 by STMicroelectronics

2STA2510

STMicroelectronics

2STA2510 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

BDX53BTU by Fairchild Semiconductor

BDX53BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

BDX54CG by Onsemi

BDX54CG

Onsemi

Onsemi's BDX54CG is a PNP power BJT with 100V VCEO and 8A IC, ideal for amplifier applications. Featuring a built-in diode and resistor, it has a min hFE of 750 and can handle up to 60W power dissipation. With a max operating temperature of 150°C, this transistor is designed in a rectangular package with through-hole terminals.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

8 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

20 MHz

MJF6668G by Onsemi

MJF6668G

Onsemi

The Onsemi MJF6668G is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 40W power dissipation for switching applications at up to 150 °C. With a max collector-emitter voltage of 100V and collector current of 10A, it offers reliable performance in various electronic circuits.

ISOLATED

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

40 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

PZTA44/ZLX by Nexperia

PZTA44/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;

COLLECTOR

.3 A

400 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

IEC-134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

20 MHz

PZTA44-QX by Nexperia

PZTA44-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): .3 A;

COLLECTOR

.3 A

7 pF

500 V

SINGLE

50

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-134

YES

GULL WING

DUAL

AMPLIFIER

SILICON

20 MHz

.75 V