Loading...

80 W Power Bipolar Junction Transistors (BJT) 13

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUL1403ED by STMicroelectronics

BUL1403ED

STMicroelectronics

BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.

3 A

650 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STA1694 by STMicroelectronics

2STA1694

STMicroelectronics

2STA1694 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Its robust design ensures reliable performance in various electronic circuits.

8 A

120 V

SINGLE

70

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STC4467 by STMicroelectronics

2STC4467

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A;

8 A

120 V

SINGLE

70

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

20 MHz

BULB7216-1 by STMicroelectronics

BULB7216-1

STMicroelectronics

BULB7216-1 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance power management solutions.

3 A

700 V

SINGLE

4

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB7216T4 by STMicroelectronics

BULB7216T4

STMicroelectronics

BULB7216T4 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for compact electronic designs with surface mount capabilities.

3 A

700 V

SINGLE

4

TO-263AB

R-PSSO-G2

e3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

80 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BULB49DT4 by STMicroelectronics

BULB49DT4

STMicroelectronics

BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

5 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

80 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

2N6497G by Onsemi

2N6497G

Onsemi

The Onsemi 2N6497G is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 5A, and max. power dissipation of 80W. Ideal for switching applications due to its single configuration and high transition frequency of 5MHz in a rectangular package style.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

5 A

250 V

SINGLE

3

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

5 MHz

MJE5850G by Onsemi

MJE5850G

Onsemi

MJE5850G by Onsemi is a PNP power BJT with 300V VCE, 8A IC, and 80W Ptot. It features a built-in diode and resistor for switching applications. The transistor has a min hFE of 5 and operates up to 150°C, making it suitable for high-power tasks.

COLLECTOR

8 A

300 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

80 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJE5851G by Onsemi

MJE5851G

Onsemi

MJE5851G by Onsemi is a PNP BJT with 80W power dissipation, 350V max. collector-emitter voltage, and 8A max. collector current. Ideal for switching applications, it features a single configuration with built-in diode and resistor in a rectangular package suitable for flange mount installations.

COLLECTOR

8 A

350 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

80 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP101G by Onsemi

TIP101G

Onsemi

TIP101G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It has a max power dissipation of 80W, hFE of 200, and max collector current of 8A. With a max operating temp of 150°C and VCE of 80V, it's suitable for various power control circuits.

COLLECTOR

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

TIP106G by Onsemi

TIP106G

Onsemi

TIP106G by Onsemi is a PNP power BJT with 80V VCEO, 8A IC, and 200 hFE. It features a Darlington configuration with built-in diode and resistor, ideal for amplifier applications. The transistor has a max power dissipation of 80W and operates up to 150 °C temperature in a rectangular package style.

COLLECTOR

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

80 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

TIP33CG by Onsemi

TIP33CG

Onsemi

TIP33CG by Onsemi is a NPN BJT transistor with 80W power dissipation, 100V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min hFE of 20 and operates at up to 150 °C. Its package style is flange mount with matte tin terminal finish.

COLLECTOR

10 A

100 V

SINGLE

20

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP33AG by Onsemi

TIP33AG

Onsemi

TIP33AG by Onsemi is a NPN power BJT with 80W max power dissipation, ideal for switching applications. It has a max collector-emitter voltage of 60V, 10A max collector current, and operates up to 150 °C. With a min hFE of 20 and fT of 3MHz, it's suitable for high-power electronic circuits in various industries.

10 A

60 V

SINGLE

20

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz