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65 W Power Bipolar Junction Transistors (BJT) 12

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVMJB41CT4G by Onsemi

NJVMJB41CT4G

Onsemi

NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

TIP42G by Onsemi

TIP42G

Onsemi

TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJB41CT4 by Onsemi

MJB41CT4

Onsemi

MJB41CT4 by Onsemi is a NPN BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. Its GULL WING terminals make it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

MJB41C by Onsemi

MJB41C

Onsemi

MJB41C by Onsemi is a NPN BJT transistor with 65W power dissipation, 100V collector-emitter voltage, and 6A collector current. It is used for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150 °C, it offers a transition frequency of 3MHz for efficient performance.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

TIP125G by Onsemi

TIP125G

Onsemi

TIP125G by Onsemi is a PNP power BJT with 65W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is suitable for various electronic projects.

COLLECTOR

5 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD244BG by Onsemi

BD244BG

Onsemi

BD244BG by Onsemi is a PNP BJT transistor with 65W power dissipation, 80V collector-emitter voltage, and 6A collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The through-hole package with flange mount style suits various electronic designs.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJB41CG by Onsemi

MJB41CG

Onsemi

MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

TIP126G by Onsemi

TIP126G

Onsemi

TIP126G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and max power dissipation of 65W, it offers high performance in various electronic designs.

COLLECTOR

5 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

TIP41AG by Onsemi

TIP41AG

Onsemi

TIP41AG by Onsemi is a NPN power BJT with 65W max power dissipation, 60V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42AG by Onsemi

TIP42AG

Onsemi

TIP42AG by Onsemi is a PNP BJT transistor with 65W power dissipation, 6A collector current, and 150°C max operating temp. Ideal for switching applications, it has a min hFE of 15 and operates at a max VCE of 60V in a rectangular package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42BG by Onsemi

TIP42BG

Onsemi

TIP42BG by Onsemi is a PNP power BJT with 65W max power dissipation, 80V max collector-emitter voltage, and 6A max collector current. It is ideal for switching applications due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD244CTU by Onsemi

BD244CTU

Onsemi

The Onsemi BD244CTU is a PNP BJT transistor with max VCEsat of 1.5V, IC of 6A, and hFE of 15. Ideal for switching applications, it operates b/w -65 to 150°C with a max VCE of 100V. Its package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

1.5 V