Loading...

60 W Power Bipolar Junction Transistors (BJT) 12

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUL213 by STMicroelectronics

BUL213

STMicroelectronics

BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.

HIGH RELIABILITY

3 A

600 V

SINGLE

16

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

60 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

6420 ns

.9 V

BUL128 by STMicroelectronics

BUL128

STMicroelectronics

BUL128 by STMicroelectronics is a NPN BJT transistor with VCEsat of 1.5V, IC of 4A, and hFE of 10. It is used for switching applications in circuits requiring up to 60W power dissipation. The device operates at a max temperature of 150 °C and has a collector-emitter voltage rating of 400V.

HIGH RELIABILITY

4 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3400 ns

1.5 V

BUL3N7 by STMicroelectronics

BUL3N7

STMicroelectronics

BUL3N7 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL741FP by STMicroelectronics

BUL741FP

STMicroelectronics

BUL741FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 60W, a collector-emitter voltage of 400V, and operates up to 150 °C. Ideal for high-power circuits with through-hole mounting.

ISOLATED

2.5 A

400 V

SINGLE

25

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STW4466 by STMicroelectronics

2STW4466

STMicroelectronics

2STW4466 by STMicroelectronics is a powerful NPN BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for high-performance electronic circuits.

6 A

80 V

SINGLE

50

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STW1693 by STMicroelectronics

2STW1693

STMicroelectronics

2STW1693 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Its robust design ensures reliable performance in demanding environments.

6 A

80 V

SINGLE

50

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

TR136 by STMicroelectronics

TR136

STMicroelectronics

TR136 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 60W and a collector-emitter voltage of 400V. It operates at up to 150 °C with a min DC current gain (hFE) of 10. Its through-hole design ensures easy integration in various electronic circuits.

3 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BDX53BTU by Fairchild Semiconductor

BDX53BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

BDX54BG by Onsemi

BDX54BG

Onsemi

BDX54BG by Onsemi is a PNP power BJT with 60W max power dissipation, 80V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating at up to 150°C, it has a min hFE of 750 and fT of 4MHz.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

BDX54CG by Onsemi

BDX54CG

Onsemi

Onsemi's BDX54CG is a PNP power BJT with 100V VCEO and 8A IC, ideal for amplifier applications. Featuring a built-in diode and resistor, it has a min hFE of 750 and can handle up to 60W power dissipation. With a max operating temperature of 150°C, this transistor is designed in a rectangular package with through-hole terminals.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

8 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

20 MHz

ST1802FX by STMicroelectronics

ST1802FX

STMicroelectronics

ST1802FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL3P5 by STMicroelectronics

BUL3P5

STMicroelectronics

BUL3P5 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient control in electronic circuits.

3 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON