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SINGLE WITH BUILT-IN FET AND DIODE Power Bipolar Junction Transistors (BJT) 14

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STC03DE170HP by STMicroelectronics

STC03DE170HP

STMicroelectronics

STC03DE170HP by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 35.7W power dissipation, and hFE of 10. Ideal for switching applications, it comes in a plastic/epoxy package with through-hole terminals. Operating temp up to 125°C makes it suitable for various industrial uses.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

10

TO-247

R-PSFM-T4

e3

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

35.7 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170HV by STMicroelectronics

STC03DE170HV

STMicroelectronics

STC03DE170HV by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 100W power dissipation, and hFE of 10. Ideal for switching applications, it has a single configuration with built-in FET and diode in a rectangular package suitable for flange mount.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

10

TO-247

R-PSFM-T4

e3

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC04IE170HP by STMicroelectronics

STC04IE170HP

STMicroelectronics

STC04IE170HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for efficient power management in electronic circuits.

4 A

SINGLE WITH BUILT-IN FET AND DIODE

4

TO-247

R-PSFM-T4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC04IE170HV by STMicroelectronics

STC04IE170HV

STMicroelectronics

STC04IE170HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 178W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for high-performance electronic circuits.

4 A

SINGLE WITH BUILT-IN FET AND DIODE

4

TO-247

R-PSFM-T4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

178 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC08DE150HP by STMicroelectronics

STC08DE150HP

STMicroelectronics

STC08DE150HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 42W, supports up to 8A collector current, and operates at temperatures up to 125 °C. Ideal for efficient circuit designs with its compact flange mount package.

8 A

SINGLE WITH BUILT-IN FET AND DIODE

4.5

TO-247

R-PSFM-T4

e3

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

42 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC08DE150HV by STMicroelectronics

STC08DE150HV

STMicroelectronics

STC08DE150HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 156W, operates at up to 150 °C, and supports collector currents of 8A. Ideal for high-performance electronic circuits.

8 A

SINGLE WITH BUILT-IN FET AND DIODE

4.5

TO-247

R-PSFM-T4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

156 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC20DE90HP by STMicroelectronics

STC20DE90HP

STMicroelectronics

STC20DE90HP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 46W, a collector current of 20A, and a min DC gain (hFE) of 4. Ideal for efficient control in electronic circuits.

20 A

SINGLE WITH BUILT-IN FET AND DIODE

4

TO-247

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

46 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP08IE120F4 by STMicroelectronics

STP08IE120F4

STMicroelectronics

STP08IE120F4 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.

ISOLATED

8 A

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-220

R-PSFM-T4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

NPN

21 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

STP12IE90F4 by STMicroelectronics

STP12IE90F4

STMicroelectronics

STP12IE90F4 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 12A collector current, and operates at temperatures up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

ISOLATED

12 A

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-220

R-PSFM-T4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

21 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE07DE220 by STMicroelectronics

STE07DE220

STMicroelectronics

STE07DE220 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220 W, operates at up to 125 °C, and supports a collector current of 7 A. Ideal for high-performance electronic circuits, it comes in a flange mount package.

ISOLATED

7 A

SINGLE WITH BUILT-IN FET AND DIODE

R-XUFM-X4

1

4

125 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

220 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STC03DE150 by STMicroelectronics

STC03DE150

STMicroelectronics

STC03DE150 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. This versatile transistor comes in a flange mount package with through-hole terminals.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170 by STMicroelectronics

STC03DE170

STMicroelectronics

STC03DE170 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. Its compact flange mount design ensures efficient performance in various electronic circuits.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE50DE100 by STMicroelectronics

STE50DE100

STMicroelectronics

STE50DE100 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 400W, supports up to 50A collector current, and operates at temperatures up to 150 °C. Its robust design ensures reliability in demanding environments.

ISOLATED

50 A

SINGLE WITH BUILT-IN FET AND DIODE

3

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

400 W

Not Qualified

Other Transistors

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STC08IE120HV by STMicroelectronics

STC08IE120HV

STMicroelectronics

STC08IE120HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 208 W, operates up to 150 °C, and supports collector-emitter voltages of 1200 V. Ideal for high-performance electronic circuits.

8 A

1200 V

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

208 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON