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200 A Insulated Gate Bipolar Transistors (IGBT) 22

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS200R06KE3BOSA1 by Infineon Technologies

FS200R06KE3BOSA1

Infineon Technologies

FS200R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a toff of 450 ns, ton of 210 ns, and can handle up to 200 A collector current. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.

ISOLATED

200 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

450 ns

210 ns

SIGC156T60NR2CX1SA4 by Infineon Technologies

SIGC156T60NR2CX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Package Shape: SQUARE;

200 A

600 V

SINGLE

S-XUUC-N11

1

11

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

229 ns

FS150R12KT3BOSA1 by Infineon Technologies

FS150R12KT3BOSA1

Infineon Technologies

Infineon FS150R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current rating of 200A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.

ISOLATED

200 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns

BSM100GB170DLCHOSA1 by Infineon Technologies

BSM100GB170DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Nominal Turn On Time (ton): 200 ns; Maximum Collector-Emitter Voltage: 1700 V;

ISOLATED

200 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

930 ns

200 ns

BSM100GB120DLCHOSA1 by Infineon Technologies

BSM100GB120DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;

ISOLATED

200 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

650 ns

190 ns

SIGC100T65R3EX1SA2 by Infineon Technologies

SIGC100T65R3EX1SA2

Infineon Technologies

N-CHANNEL; Maximum Collector Current (IC): 200 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 175 Cel;

200 A

650 V

6.4 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

NOT SPECIFIED

FS150R12KE3GBOSA1 by Infineon Technologies

FS150R12KE3GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 810 ns; Package Shape: RECTANGULAR;

ISOLATED

200 A

1200 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X29

6

29

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

810 ns

400 ns

FS150R12KE3BOSA1 by Infineon Technologies

FS150R12KE3BOSA1

Infineon Technologies

FS150R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial settings due to its isolated case connection and fast switching capabilities.

ISOLATED

200 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

340 ns

FS150R12PT4BOSA1 by Infineon Technologies

FS150R12PT4BOSA1

Infineon Technologies

FS150R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current rating of 200A, and turn off time of 600ns. Ideal for power control applications due to its high operating temperature of 175°C and built-in diode & thermistor.

ISOLATED

200 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X20

6

20

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

600 ns

190 ns

FF150R12ME3GBOSA1 by Infineon Technologies

FF150R12ME3GBOSA1

Infineon Technologies

FF150R12ME3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 200A, and turn-off time of 810ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.

ISOLATED

200 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

810 ns

400 ns

FF150R12YT3BOMA1 by Infineon Technologies

FF150R12YT3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Terminals: 24; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

200 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

2

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

330 ns

MG12150S-BN2MM by Littelfuse

MG12150S-BN2MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn On Time (ton): 340 ns;

ISOLATED

200 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

VS-GA200SA60UP by Vishay Intertechnology

VS-GA200SA60UP

Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.

LOW CONDUCTION LOSS

ISOLATED

200 A

600 V

SINGLE

R-PUFM-X4

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

131 ns

STGE200NB60S by STMicroelectronics

STGE200NB60S

STMicroelectronics

STGE200NB60S by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 200A IC, and 1.6V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 600W and operates up to 150°C.

ISOLATED

200 A

600 V

SINGLE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

4600 ns

170 ns

1.6 V

APTGF150H120G by Microsemi

APTGF150H120G

Microsemi

APTGF150H120G by Microsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. Ideal for motor control applications, it offers a max VCEsat of 3.7V and can handle up to 200A of collector current. With a max operating temperature of 150°C, this IGBT has a built-in diode and nominal turn-off time of 390ns.

ISOLATED

200 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X12

e1

1

4

12

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

961 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

390 ns

190 ns

3.7 V

MG12150W-XN2MM by Littelfuse

MG12150W-XN2MM

Littelfuse

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-XUFM-X35; Nominal Turn Off Time (toff): 610 ns;

ISOLATED

200 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X35

6

35

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

FT150R12KE3B5BOSA1 by Infineon Technologies

FT150R12KE3B5BOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Terminal Form: UNSPECIFIED; Case Connection: ISOLATED;

ISOLATED

200 A

1200 V

COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X18

3

18

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

850 ns

350 ns

NGTB75N65FL2WAG by Onsemi

NGTB75N65FL2WAG

Onsemi

NGTB75N65FL2WAG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 200A IC, ideal for POWER CONTROL applications. Featuring a 78ns turn on time and 262ns turn off time, this transistor has a max power dissipation of 536W. Its package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

200 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

536 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

262 ns

78 ns

2 V

MG12150S-DEN2MM by Littelfuse

MG12150S-DEN2MM

Littelfuse

N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 610 ns; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

200 A

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

FT150R12KE3GB4BDLA1 by Infineon Technologies

FT150R12KE3GB4BDLA1

Infineon Technologies

Infineon Technologies' FT150R12KE3GB4BDLA1 is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 200A. It is commonly used for power control applications due to its common collector configuration and built-in diode and resistor.

ISOLATED

200 A

1200 V

COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

R-XUFM-X39

3

39

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

850 ns

350 ns

SIGC100T60R3EX1SA1 by Infineon Technologies

SIGC100T60R3EX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;

200 A

600 V

SINGLE

R-XUUC-N10

1

10

175 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

FGY100T65SCDT by Onsemi

FGY100T65SCDT

Onsemi

FGY100T65SCDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 200A. Ideal for GENERAL PURPOSE SWITCHING applications, it has a max operating temperature of 175 °C and a nominal turn off time of 410ns.

FAST SWITCHING

COLLECTOR

200 A

650 V

SINGLE WITH BUILT-IN DIODE

6.9 V

25 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GENERAL PURPOSE SWITCHING

SILICON

410 ns

240 ns

1.9 V