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NARROW BAND HIGH POWER RF & Microwave Amplifiers 38

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
MGA-43128-BLKG by Broadcom

MGA-43128-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 6;

CMOS COMPATIBLE

50 ohm

COMPONENT

31.5 dB

20 dBm

e3

SURFACE MOUNT

1

28

800 MHz

700 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

6

MGA-43628-BLKG by Broadcom

MGA-43628-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 3;

SURFACE MOUNT

3

28

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

600 mA

GAAS

MGA-43628-TR1G by Broadcom

MGA-43628-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC28,.2SQ,20;

SURFACE MOUNT

3

28

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

600 mA

GAAS

MGA-43428-BLKG by Broadcom

MGA-43428-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC28,.2SQ,20;

SURFACE MOUNT

1

28

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

560 mA

GAAS

MGA-43428-TR1G by Broadcom

MGA-43428-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

SURFACE MOUNT

1

28

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

560 mA

GAAS

MGA-43528-BLKG by Broadcom

MGA-43528-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

COMPONENT

38 dB

20 dBm

SURFACE MOUNT

3

28

1995 MHz

1930 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

600 mA

GAAS

MGA-43528-TR1G by Broadcom

MGA-43528-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC28,.2SQ,20;

COMPONENT

38 dB

20 dBm

SURFACE MOUNT

3

28

1995 MHz

1930 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

600 mA

GAAS

PTMA210152MV1AUMA1 by Infineon Technologies

PTMA210152MV1AUMA1

Infineon Technologies

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 20; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 28; Maximum Input Power (CW): 15 dBm;

50 ohm

COMPONENT

27.5 dB

15 dBm

SURFACE MOUNT

1

20

2200 MHz

1800 MHz

PLASTIC/EPOXY

SOP20,.56

28

NARROW BAND HIGH POWER

10

MGA-43728-BLKG by Broadcom

MGA-43728-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

SURFACE MOUNT

1

28

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

600 mA

GAAS

MGA-43728-TR1G by Broadcom

MGA-43728-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

SURFACE MOUNT

1

28

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

600 mA

GAAS

MGA-43328-BLKG by Broadcom

MGA-43328-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

28

2700 MHz

2500 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

MGA-43328-TR1G by Broadcom

MGA-43328-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

28

2700 MHz

2500 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

BGF802-20,127 by NXP Semiconductors

BGF802-20,127

NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 869 MHz; Construction: COMPONENT; Minimum Operating Temperature: -20 Cel;

50 ohm

COMPONENT

28 dB

20 dBm

1

894 MHz

869 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

FLNG,1.6"H.SPACE

26

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

320 mA

HYBRID

2

BGF944,127 by NXP Semiconductors

BGF944,127

NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: METAL; Power Supplies (V): 26; Maximum Supply Current: 300 mA; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2;

50 ohm

COMPONENT

27 dB

20 dBm

1

960 MHz

920 MHz

90 Cel

-20 Cel

METAL

FLNG,1.6"H.SPACE

26

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

300 mA

2

BGY68,112 by NXP Semiconductors

BGY68,112

NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: MODULE; Maximum Supply Current: 135 mA; Maximum Operating Frequency: 75 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

29.2 dB

6.25 dBm

75 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

135 mA

HYBRID

MGA-43228-BLKG by Broadcom

MGA-43228-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 2300 MHz;

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

28

2500 MHz

2300 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

MGA-43228-TR1G by Broadcom

MGA-43228-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

28

2500 MHz

2300 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

AFIC31025GNR1 by NXP Semiconductors

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I20X050GNR1 by NXP Semiconductors

A3I20X050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 2.15/28;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010NR1 by NXP Semiconductors

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

PTMA210452ELV1XWSA1 by Infineon Technologies

PTMA210452ELV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER; Maximum Input Power (CW): 25 dBm; Construction: MODULE; Gain: 26.5 dB; Minimum Operating Frequency: 1900 MHz; Characteristic Impedance: 50 ohm;

50 ohm

MODULE

26.5 dB

25 dBm

2200 MHz

1900 MHz

NARROW BAND HIGH POWER

10

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A3I20X050NR1 by NXP Semiconductors

A3I20X050NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

ADPA1105ACGZN-R7 by Analog Devices

ADPA1105ACGZN-R7

Analog Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Technology: GAN; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm;

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

AFSC5G40E38T2 by NXP Semiconductors

AFSC5G40E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 28;

50 ohm

COMPONENT

27.1 dB

SURFACE MOUNT

1

26

4000 MHz

3700 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

28

NARROW BAND HIGH POWER

LDMOS

AFSC5G35E38T2 by NXP Semiconductors

AFSC5G35E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Package Equivalence Code: LCC26,.24X.4,40;

50 ohm

COMPONENT

29.3 dB

e4

SURFACE MOUNT

1

26

3700 MHz

3400 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

30

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

A3M35TL039T2 by NXP Semiconductors

A3M35TL039T2

NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.5 dB

SURFACE MOUNT

1

26

3700 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

A3M37TL039T2 by NXP Semiconductors

A3M37TL039T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.1 dB

e4

SURFACE MOUNT

1

26

3800 MHz

3600 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

AFSC5G23E37T2 by NXP Semiconductors

AFSC5G23E37T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 2400 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

32 dB

SURFACE MOUNT

1

26

2400 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

28

NARROW BAND HIGH POWER

LDMOS

A3M34TL139T2 by NXP Semiconductors

A3M34TL139T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3300 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

25.6 dB

SURFACE MOUNT

1

26

3580 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

27

NARROW BAND HIGH POWER

LDMOS