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Microchip Technology SRAM 19

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
23A1024-I/P by Microchip Technology

23A1024-I/P

Microchip Technology

Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.

20 MHz

COMMON/SEPARATE

R-PDIP-T8

e3

9.271 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/2

Not Qualified

TS 16949

5.334 mm

.000004 Amp

1.7 V

SRAMs

10 mA

2.2 V

1.7 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23LCV512-I/P by Microchip Technology

23LCV512-I/P

Microchip Technology

23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.

20 MHz

COMMON

R-PDIP-T8

e3

9.271 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5.334 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23A256-I/SN by Microchip Technology

23A256-I/SN

Microchip Technology

23A256-I/SN by Microchip Technology is a 32Kx8 SRAM with 16 MHz clock frequency, operating at 1.8V. It features separate I/O, synchronous operation, and 3-STATE output. Ideal for industrial applications requiring high-speed memory access in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

23A640-I/P by Microchip Technology

23A640-I/P

Microchip Technology

23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8

Not Qualified

TS 16949

5.334 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23A640-I/SN by Microchip Technology

23A640-I/SN

Microchip Technology

Microchip Technology's 23A640-I/SN is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 1.8V, it offers a max clock frequency of 16MHz and features synchronous operation. Ideal for industrial applications requiring high-speed data storage in compact spaces.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

TS 16949

1.75 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

23A640-I/ST by Microchip Technology

23A640-I/ST

Microchip Technology

Microchip Technology's 23A640-I/ST is an 8Kx8 SRAM with a max clock frequency of 16MHz. Operating at 1.8V, it features separate I/O and offers a memory density of 65536 bits. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

TS 16949

1.2 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K256-I/P by Microchip Technology

23K256-I/P

Microchip Technology

23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

20 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

5.334 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K640-E/P by Microchip Technology

23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

TS 16949

5.334 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K640-E/ST by Microchip Technology

23K640-E/ST

Microchip Technology

23K640-E/ST by Microchip Technology is a CMOS SRAM with 8Kx8 organization, operating at up to 16 MHz. It features separate I/O, 3-state output characteristics, and operates in automotive temperature grade applications.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K640T-E/ST by Microchip Technology

23K640T-E/ST

Microchip Technology

23K640T-E/ST by Microchip Technology is a 8Kx8 SRAM with 16MHz clock frequency, operating at -40 to 125°C. It has separate I/O, 3-state output, and serial interface. Ideal for automotive applications due to TS16949 screening level and low standby current of 0.00001A.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23LC1024T-E/SN by Microchip Technology

23LC1024T-E/SN

Microchip Technology

23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.

16 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

TS 16949

1.75 mm

.00002 Amp

2.5 V

SRAMs

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

23LC1024-I/SNVAO by Microchip Technology

23LC1024-I/SNVAO

Microchip Technology

Microchip Technology's 23LC1024-I/SNVAO is a 128KX8 SRAM with synchronous operation and 3-STATE output. It operates at up to 20 MHz clock frequency, suitable for industrial applications requiring high-speed memory access. With a small outline package style and low standby current of 0.00001 Amp, it is ideal for space-constrained designs in automotive electronics.

20 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

AEC-Q100; TS 16949

1.75 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

48L256-I/SN by Microchip Technology

48L256-I/SN

Microchip Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0003 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512-I/SN by Microchip Technology

48L512-I/SN

Microchip Technology

48L512-I/SN by Microchip Technology is a 64KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features 3-STATE output characteristics and operates on CMOS technology. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512T-I/SN by Microchip Technology

48L512T-I/SN

Microchip Technology

48L512T-I/SN by Microchip is a 64KX8 SRAM with 66 MHz clock frequency, 3-STATE output, and operates at -40 to 85 °C. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640-I/SN by Microchip Technology

48L640-I/SN

Microchip Technology

48L640-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates at a max clock frequency of 66 MHz and has a min standby voltage of 2.7 V. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640T-I/SN by Microchip Technology

48L640T-I/SN

Microchip Technology

48L640T-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates in synchronous mode at a max clock frequency of 66 MHz, suitable for industrial applications requiring fast and reliable data storage. With a small outline package style and common I/O type, it offers high performance in a compact form factor.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48LM01-I/SM by Microchip Technology

48LM01-I/SM

Microchip Technology

48LM01-I/SM by Microchip Technology is a 128KX8 SRAM with synchronous operation and 66 MHz clock frequency. Ideal for industrial applications, it features a small outline package, 3-STATE output, and operates in the -40 to 85 °C temperature range.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

48LM01T-I/SM by Microchip Technology

48LM01T-I/SM

Microchip Technology

48LM01T-I/SM by Microchip Technology is a 128KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features synchronous operation, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm