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LFBGA SRAM 8

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
AS7C316098A-10BINTR by Alliance Memory

AS7C316098A-10BINTR

Alliance Memory

Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.

10 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS7C38096A-10BIN by Alliance Memory

AS7C38096A-10BIN

Alliance Memory

Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.

10 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

IS61WV51232BLL-10BLI by Integrated Silicon Solution

IS61WV51232BLL-10BLI

Integrated Silicon Solution

IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.

10 ns

R-PBGA-B90

e1

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.45 mm

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10

8 mm

AS7C31026C-12BIN by Alliance Memory

AS7C31026C-12BIN

Alliance Memory

Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.

12 ns

R-PBGA-B48

e3/e6

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.34 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

6 mm

N04L63W2AB27I by Onsemi

N04L63W2AB27I

Onsemi

N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AB25IT by Onsemi

N02L63W3AB25IT

Onsemi

Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AB25I by Onsemi

N02L63W3AB25I

Onsemi

N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N04L63W1AB27I by Onsemi

N04L63W1AB27I

Onsemi

N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm