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DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.

DRAM

Available Parts 1,960

Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46H32M16LFBF-5AIT:C by Micron Technology

MT46H32M16LFBF-5AIT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-5AIT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. Operating at 200 MHz, it features a very thin profile package style and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

536870912 bit

LPDDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

115 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6AAT:C by Micron Technology

MT46H32M16LFBF-6AAT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AAT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. It operates at 166 MHz, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

536870912 bit

LPDDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

105 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6AIT:C by Micron Technology

MT46H32M16LFBF-6AIT:C

Micron Technology

MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

105 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-5AAT:B by Micron Technology

MT46H32M32LFB5-5AAT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-5AIT:B by Micron Technology

MT46H32M32LFB5-5AIT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-5AT:B by Micron Technology

MT46H32M32LFB5-5AT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-6AT:B by Micron Technology

MT46H32M32LFB5-6AT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-6IT:B by Micron Technology

MT46H32M32LFB5-6IT:B

Micron Technology

Micron Technology's MT46H32M32LFB5-6IT:B is a DDR1 DRAM with 32MX32 organization, operating at 166 MHz. It features a 90-terminal grid array package suitable for industrial applications. With synchronous operation and self-refresh capability, it offers fast access time of 5 ns and supports sequential burst lengths of 2,4,8,16.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFMA-5IT:B by Micron Technology

MT46H32M32LFMA-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

14 mm

1073741824 bit

DDR1 DRAM

32

1

1

168

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.8 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

14 mm

MT46H64M16LFBF-5AAT:B by Micron Technology

MT46H64M16LFBF-5AAT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

1073741824 bit

DDR1 DRAM

16

1

1

60

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H64M32LFCX-5WT:B by Micron Technology

MT46H64M32LFCX-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32LFCX-6WT:B by Micron Technology

MT46H64M32LFCX-6WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32LFMA-5WT:B by Micron Technology

MT46H64M32LFMA-5WT:B

Micron Technology

Micron Technology's MT46H64M32LFMA-5WT:B is a DDR1 DRAM with 64MX32 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

2147483648 bit

DDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.7 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT46V16M16CY-5BAAT:M by Micron Technology

MT46V16M16CY-5BAAT:M

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

AEC-Q100

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT46V16M16CY-5BAIT:M by Micron Technology

MT46V16M16CY-5BAIT:M

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

8 mm

MT46V16M16P-5BAIT:M by Micron Technology

MT46V16M16P-5BAIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BAIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT16JTF51264HZ-1G4M1 by Micron Technology

MT16JTF51264HZ-1G4M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XZMA-N204

e4

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

MT16KTF51264HZ-1G4M1 by Micron Technology

MT16KTF51264HZ-1G4M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XZMA-N204

e4

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

MT18JSF51272PZ-1G6M1 by Micron Technology

MT18JSF51272PZ-1G6M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

R-XZMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

4 mm

YES

.216 Amp

Other Memory ICs

7830 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

ZIG-ZAG

30.175 mm

MT8VDDF6464AY-40BJ1 by Micron Technology

MT8VDDF6464AY-40BJ1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N184

133.35 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

184

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

25.53 mm

YES

3.6 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

30

MT48LC4M16A2P-6AIT:J by Micron Technology

MT48LC4M16A2P-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

AS4C8M16S-6TIN by Alliance Memory

AS4C8M16S-6TIN

Alliance Memory

Alliance Memory's AS4C8M16S-6TIN is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, 6 ns access time, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability. Package style: Small Outline, Thin Profile.

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3/e6

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

3

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

DRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

MT16HTS25664HY-667A1 by Micron Technology

MT16HTS25664HY-667A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PDMA-N200

e3

17179869184 bit

DDR DRAM MODULE

64

1

200

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

2336 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT16VDDF12864HY-40BJ1 by Micron Technology

MT16VDDF12864HY-40BJ1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N200

e3

8589934592 bit

DDR DRAM MODULE

64

1

200

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.08 Amp

DRAMs

5520 mA

2.6

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT18HTF6472AY-53EB2 by Micron Technology

MT18HTF6472AY-53EB2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

267 MHz

COMMON

R-PDMA-N240

e3

4831838208 bit

DDR DRAM MODULE

72

1

240

67108864 words

64M

55 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

DRAMs

3060 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT4KTF12864HZ-1G6K1 by Micron Technology

MT4KTF12864HZ-1G6K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N204

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

204

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

MATTE TIN OVER NICKEL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT16JTF51264AZ-1G4D1 by Micron Technology

MT16JTF51264AZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N240

e3

34359738368 bit

DDR DRAM MODULE

64

1

240

536870912 words

512M

70 Cel

0 Cel

512MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

3176 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT18HTF25672AZ-80EH1 by Micron Technology

MT18HTF25672AZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

19327352832 bit

72

1

240

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.126 Amp

Other Memory ICs

1953 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT18HTF25672FDZ-667H1D6 by Micron Technology

MT18HTF25672FDZ-667H1D6

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PDMA-N240

e4

19327352832 bit

72

240

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,1.8

Not Qualified

8192

Other Memory ICs

4480 mA

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT18HTS25672RHZ-80EH1 by Micron Technology

MT18HTS25672RHZ-80EH1

Micron Technology

Micron Technology's MT18HTS25672RHZ-80EH1 is a 256MX72 DRAM module with synchronous operation at 400 MHz clock frequency. It features self-refresh capability, operates at 1.8V, and has a memory density of 19.3 Gb. Ideal for applications requiring high-speed data processing in commercial temperature environments.

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

19327352832 bit

SYNCHRONOUS DRAM MODULE

72

1

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

Other Memory ICs

3123 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT18HVF25672PDZ-80EH1 by Micron Technology

MT18HVF25672PDZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

19327352832 bit

72

1

240

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

Other Memory ICs

4230 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT18HVF25672PZ-80EH1 by Micron Technology

MT18HVF25672PZ-80EH1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

19327352832 bit

DDR DRAM MODULE

72

1

240

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.126 Amp

DRAMs

3780 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT18JDF51272PDZ-1G4D1 by Micron Technology

MT18JDF51272PDZ-1G4D1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.255 ns

667 MHz

COMMON

R-PDMA-N240

e3

38654705664 bit

72

1

240

536870912 words

512M

70 Cel

0 Cel

512MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.216 Amp

Other Memory ICs

3573 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT18JSF51272AZ-1G4D1 by Micron Technology

MT18JSF51272AZ-1G4D1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N240

e3

38654705664 bit

72

1

240

536870912 words

512M

70 Cel

0 Cel

512MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

Other Memory ICs

3393 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT18JSF51272AZ-1G6M1 by Micron Technology

MT18JSF51272AZ-1G6M1

Micron Technology

DDR3 DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

800 MHz

COMMON

R-PDMA-N240

e4

38654705664 bit

DDR3 DRAM MODULE

72

240

536870912 words

512M

70 Cel

0 Cel

512MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

Other Memory ICs

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT18JSF51272PDZ-1G4D1 by Micron Technology

MT18JSF51272PDZ-1G4D1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.255 ns

667 MHz

COMMON

R-PDMA-N240

e4

38654705664 bit

72

240

536870912 words

512M

70 Cel

0 Cel

512MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.216 Amp

Other Memory ICs

3573 mA

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT36HTF1G72PZ-667C1 by Micron Technology

MT36HTF1G72PZ-667C1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XDMA-N240

e3

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

Other Memory ICs

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

4 mm

MT36HTF1G72PZ-80EC1 by Micron Technology

MT36HTF1G72PZ-80EC1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XDMA-N240

e3

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

Other Memory ICs

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

4 mm

MT36HTF25672PZ-667G1 by Micron Technology

MT36HTF25672PZ-667G1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

19327352832 bit

72

1

240

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

Other Memory ICs

2646 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT36JSZF1G72PZ-1G4D1 by Micron Technology

MT36JSZF1G72PZ-1G4D1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N240

e4

77309411328 bit

72

240

1073741824 words

1G

70 Cel

0 Cel

1GX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.432 Amp

Other Memory ICs

7200 mA

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT4HTF3264HZ-667G1 by Micron Technology

MT4HTF3264HZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

e3

2147483648 bit

DDR DRAM MODULE

64

1

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT4HTF3264HZ-800G1 by Micron Technology

MT4HTF3264HZ-800G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-PDMA-N200

e3

67.6 mm

536870912 bit

DDR DRAM MODULE

16

1

1

1

200

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.028 Amp

DRAMs

1480 mA

3.6 V

1.7 V

1.8

NO

CMOS

OTHER

MATTE TIN

NO LEAD

.6 mm

DUAL

2.45 mm

MT4HTF6464HZ-800H1 by Micron Technology

MT4HTF6464HZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.028 Amp

DRAMs

1760 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT72JSS2G72PZ-1G1D1 by Micron Technology

MT72JSS2G72PZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.3 ns

533 MHz

COMMON

R-PDMA-N240

e3

154618822656 bit

DDR DRAM MODULE

72

1

240

2147483648 words

2G

70 Cel

0 Cel

2GX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.864 Amp

DRAMs

7130 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT8HTF12864HZ-667H1 by Micron Technology

MT8HTF12864HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

2240 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8HTF12864HZ-800H1 by Micron Technology

MT8HTF12864HZ-800H1

Micron Technology

Micron Technology's MT8HTF12864HZ-800H1 is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory density of 8589934592 bits. Ideal for applications requiring high-speed synchronous memory access in commercial temperature environments.

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

2680 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8JSF25664HZ-1G1D1 by Micron Technology

MT8JSF25664HZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

533 MHz

COMMON

R-XZMA-N204

e3

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

2560 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8JSF25664HZ-1G4D1 by Micron Technology

MT8JSF25664HZ-1G4D1

Micron Technology

Micron Technology's MT8JSF25664HZ-1G4D1 is a 256MX64 DDR DRAM MODULE with 667 MHz clock frequency. Operating at 1.5V, it offers 8192 refresh cycles and features a single bank page burst access mode. Ideal for commercial applications requiring high-speed memory performance in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PDMA-N204

e3

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

2920 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

30 mm