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DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.

DRAM

Available Parts 1,960

Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41J256M8HX-15EAIT:D by Micron Technology

MT41J256M8HX-15EAIT:D

Micron Technology

Micron Technology's MT41J256M8HX-15EAIT:D is a DDR3 DRAM with 256MX8 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

2147483648 bit

DDR3 DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

385 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M8DA-125:M by Micron Technology

MT41K256M8DA-125:M

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

1

78

268435456 words

256M

SYNCHRONOUS

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41K256M8DA-15E:M by Micron Technology

MT41K256M8DA-15E:M

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B78;

MULTI BANK PAGE BURST

.255 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e3

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

1

78

268435456 words

256M

SYNCHRONOUS

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

205 mA

1.45 V

1.283 V

1.35

YES

CMOS

MATTE TIN

BALL

.8 mm

BOTTOM

8 mm

MT41K512M4DA-125:K by Micron Technology

MT41K512M4DA-125:K

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

156 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT41K512M4DA-125:M by Micron Technology

MT41K512M4DA-125:M

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V32M16CV-5B:J by Micron Technology

MT46V32M16CV-5B:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V128M4P-5B:J by Micron Technology

MT46V128M4P-5B:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

4

1

1

66

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16CY-5B:J by Micron Technology

MT46V32M16CY-5B:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

MT46V32M16CY-5BLIT:J by Micron Technology

MT46V32M16CY-5BLIT:J

Micron Technology

Micron Technology's MT46V32M16CY-5BLIT:J is a DDR1 DRAM with 32MX16 organization, 200 MHz clock frequency, and 85°C operating temperature. It is used in industrial applications requiring common I/O type, synchronous operation, and self-refresh capability.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

8 mm

MT46V32M16P-5BL:J by Micron Technology

MT46V32M16P-5BL:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-5B:J by Micron Technology

MT46V32M16TG-5B:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8CV-5B:J by Micron Technology

MT46V64M8CV-5B:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

8 mm

MT46V64M8CV-5BIT:J by Micron Technology

MT46V64M8CV-5BIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

8 mm

MT46V64M8CY-5BIT:J by Micron Technology

MT46V64M8CY-5BIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT46V64M8CY-5BL:J by Micron Technology

MT46V64M8CY-5BL:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

8 mm

MT46V64M8P-5BIT:J by Micron Technology

MT46V64M8P-5BIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-5BLIT:J by Micron Technology

MT46V64M8P-5BLIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-5B:J by Micron Technology

MT46V64M8TG-5B:J

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-5BIT:J by Micron Technology

MT46V64M8TG-5BIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

230 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT41K1G4RH-125:E by Micron Technology

MT41K1G4RH-125:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT48LC8M16A2TG-6A:L by Micron Technology

MT48LC8M16A2TG-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:L is a 8MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT42L64M32D1KL-3IT:A by Micron Technology

MT42L64M32D1KL-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT48LC2M32B2TG-6AIT:J by Micron Technology

MT48LC2M32B2TG-6AIT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M16A2P-7EIT:J by Micron Technology

MT48LC4M16A2P-7EIT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M32B2B5-6A:L by Micron Technology

MT48LC4M32B2B5-6A:L

Micron Technology

MT48LC4M32B2B5-6A:L by Micron Technology is a 4MX32 Synchronous DRAM with a memory density of 134217728 bit. It operates at a voltage of 3.3V and has a max access time of 5.4 ns. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2B5-7IT:G by Micron Technology

MT48LC4M32B2B5-7IT:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2P-6IT:G by Micron Technology

MT48LC4M32B2P-6IT:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M32B2P-6AIT:L by Micron Technology

MT48LC4M32B2P-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC4M32B2P-7IT:G by Micron Technology

MT48LC4M32B2P-7IT:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC4M32B2TG-6AIT:L by Micron Technology

MT48LC4M32B2TG-6AIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Width: 10.16 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M32B2TG-6A:L by Micron Technology

MT48LC4M32B2TG-6A:L

Micron Technology

Micron Technology's MT48LC4M32B2TG-6A:L is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT49H16M36BM-18:B by Micron Technology

MT49H16M36BM-18:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-18IT:B by Micron Technology

MT49H16M36BM-18IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-25:B by Micron Technology

MT49H16M36BM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-25E:B by Micron Technology

MT49H16M36BM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M36BM-25IT:B by Micron Technology

MT49H16M36BM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-33:B by Micron Technology

MT49H16M36BM-33:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

565 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36FM-18:B by Micron Technology

MT49H16M36FM-18:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e0;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36FM-25:B by Micron Technology

MT49H16M36FM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36FM-25E:B by Micron Technology

MT49H16M36FM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-18:B by Micron Technology

MT49H32M18BM-18:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 32MX18;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

830 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-25:B by Micron Technology

MT49H32M18BM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-25E:B by Micron Technology

MT49H32M18BM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-33:B by Micron Technology

MT49H32M18BM-33:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.5/1.8,1.8,2.5;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

530 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CBM-25IT:B by Micron Technology

MT49H32M18CBM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CFM-18:B by Micron Technology

MT49H32M18CFM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD SILVER; Memory Width: 18;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CFM-25:B by Micron Technology

MT49H32M18CFM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm; Organization: 32MX18;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CFM-25E:B by Micron Technology

MT49H32M18CFM-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B144; Memory Width: 18;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm