Loading...

90 DRAM 121

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48H8M32LFB5-75AT:H by Micron Technology

MT48H8M32LFB5-75AT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

105 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

4096

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

IS42S32800G-6BLI-TR by Integrated Silicon Solution

IS42S32800G-6BLI-TR

Integrated Silicon Solution

IS42S32800G-6BLI-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 166 MHz and has a temperature grade of INDUSTRIAL. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and industrial control systems.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.003 Amp

DRAMs

350 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

IS42S32400F-6BL-TR by Integrated Silicon Solution

IS42S32400F-6BL-TR

Integrated Silicon Solution

IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

134217728 bit

SYNCHRONOUS DRAM

32

90

4194304 words

4M

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

MT46H64M32LFCM-5IT:A by Micron Technology

MT46H64M32LFCM-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.01 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H64M32LFCM-6IT:A by Micron Technology

MT46H64M32LFCM-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.01 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

IS42S32160D-7BLI by Integrated Silicon Solution

IS42S32160D-7BLI

Integrated Silicon Solution

IS42S32160D-7BLI by Integrated Silicon Solution is a 16MX32 SYNCHRONOUS DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for INDUSTRIAL applications, it features FOUR BANK PAGE BURST access mode and offers a memory density of 536870912 bit.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

300 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

IS42S32800G-7BLI by Integrated Silicon Solution

IS42S32800G-7BLI

Integrated Silicon Solution

IS42S32800G-7BLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has a min operating temperature of -40 °C. It is commonly used in industrial applications requiring high-speed memory access.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.003 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

W9825G2JB-6I by Winbond Electronics

W9825G2JB-6I

Winbond Electronics

Winbond Electronics' W9825G2JB-6I is an 8MX32 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Features include 3.3V supply voltage, 90 terminals in a thin profile grid array package, and common I/O type with self-refresh capability.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3/3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

150 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48LC4M32B2B5-6A:L by Micron Technology

MT48LC4M32B2B5-6A:L

Micron Technology

MT48LC4M32B2B5-6A:L by Micron Technology is a 4MX32 Synchronous DRAM with a memory density of 134217728 bit. It operates at a voltage of 3.3V and has a max access time of 5.4 ns. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2B5-7IT:G by Micron Technology

MT48LC4M32B2B5-7IT:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42S32400F-6BLI by Integrated Silicon Solution

IS42S32400F-6BLI

Integrated Silicon Solution

IS42S32400F-6BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 166MHz clock frequency. It features self-refresh mode, common I/O type, and supports four-bank page burst access. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

IS42S32400F-6BL by Integrated Silicon Solution

IS42S32400F-6BL

Integrated Silicon Solution

IS42S32400F-6BL by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

IS42S32400F-7BLI by Integrated Silicon Solution

IS42S32400F-7BLI

Integrated Silicon Solution

IS42S32400F-7BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

160 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT46H16M32LFB5-6AAT:C by Micron Technology

MT46H16M32LFB5-6AAT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 8 mm;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFBQ-5AIT:C by Micron Technology

MT46H16M32LFBQ-5AIT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-5AAT:B by Micron Technology

MT46H32M32LFB5-5AAT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-5AIT:B by Micron Technology

MT46H32M32LFB5-5AIT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-5AT:B by Micron Technology

MT46H32M32LFB5-5AT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-6AT:B by Micron Technology

MT46H32M32LFB5-6AT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.000015 Amp

DRAMs

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFB5-6IT:B by Micron Technology

MT46H32M32LFB5-6IT:B

Micron Technology

Micron Technology's MT46H32M32LFB5-6IT:B is a DDR1 DRAM with 32MX32 organization, operating at 166 MHz. It features a 90-terminal grid array package suitable for industrial applications. With synchronous operation and self-refresh capability, it offers fast access time of 5 ns and supports sequential burst lengths of 2,4,8,16.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

DDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H64M32LFCX-5WT:B by Micron Technology

MT46H64M32LFCX-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32LFCX-6WT:B by Micron Technology

MT46H64M32LFCX-6WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

IS42S32160D-7BLI-TR by Integrated Silicon Solution

IS42S32160D-7BLI-TR

Integrated Silicon Solution

IS42S32160D-7BLI-TR by Integrated Silicon Solution is a 16MX32 DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e3

13 mm

536870912 bit

CACHE DRAM MODULE

32

1

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

300 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

8 mm

MT48H8M32LFB5-75IT:H by Micron Technology

MT48H8M32LFB5-75IT:H

Micron Technology

Micron Technology's MT48H8M32LFB5-75IT:H is a 8MX32 DRAM with 133 MHz clock frequency, 85 mA supply current, and 85°C max operating temp. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H8M32LFB5-6:H by Micron Technology

MT48H8M32LFB5-6:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

13 mm

MT48H8M32LFB5-6IT:H by Micron Technology

MT48H8M32LFB5-6IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

13 mm

MT48H8M32LFB5-75:H by Micron Technology

MT48H8M32LFB5-75:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

13 mm

MT46H64M32LFCX-6IT:B by Micron Technology

MT46H64M32LFCX-6IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT46H64M32LFCX-5AIT:B by Micron Technology

MT46H64M32LFCX-5AIT:B

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

13 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2B5-6A:J by Micron Technology

MT48LC2M32B2B5-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2B5-6AAAT:J by Micron Technology

MT48LC2M32B2B5-6AAAT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B90

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2B5-6AAIT:J by Micron Technology

MT48LC2M32B2B5-6AAIT:J

Micron Technology

Micron Technology's MT48LC2M32B2B5-6AAIT:J is a 2MX32 Synchronous DRAM with 67108864-bit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for industrial applications requiring high-speed and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

AEC-Q100

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC4M32B2B5-6AIT:L by Micron Technology

MT48LC4M32B2B5-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48H16M32L2B5-10IT by Micron Technology

MT48H16M32L2B5-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-10 by Micron Technology

MT48H16M32L2B5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-8IT by Micron Technology

MT48H16M32L2B5-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Memory Density: 536870912 bit;

FOUR BANK PAGE BURST

8.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-8 by Micron Technology

MT48H16M32L2B5-8

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-10IT by Micron Technology

MT48H16M32L2F5-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-10 by Micron Technology

MT48H16M32L2F5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-8IT by Micron Technology

MT48H16M32L2F5-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

FOUR BANK PAGE BURST

8.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-8 by Micron Technology

MT48H16M32L2F5-8

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Memory Width: 32;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32LFB5-8IT:GTR by Micron Technology

MT48LC4M32LFB5-8IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFCM-5IT:B by Micron Technology

MT46H16M32LFCM-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48H16M32LFCM-6IT:B by Micron Technology

MT48H16M32LFCM-6IT:B

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

105 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H16M32LFCM-6LIT:B by Micron Technology

MT46H16M32LFCM-6LIT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.95 V;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT46H32M32LFCM-5IT:A by Micron Technology

MT46H32M32LFCM-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

LPDDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H32M32LFCM-6LIT:A by Micron Technology

MT46H32M32LFCM-6LIT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

LPDDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm