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260 DRAM 32

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA18ASF1G72HZ-2G1A1 by Micron Technology

MTA18ASF1G72HZ-2G1A1

Micron Technology

Micron Technology's MTA18ASF1G72HZ-2G1A1 DDR DRAM MODULE offers 1GX72 organization, 72-bit memory width, and operates at 1.2V. Ideal for servers and high-performance computing applications due to its synchronous operation and self-refresh capability.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

3.7 mm

MTA16ATF2G64HZ-3G2J1 by Micron Technology

MTA16ATF2G64HZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA4ATF51264HZ-3G2J1 by Micron Technology

MTA4ATF51264HZ-3G2J1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.5 mm

MTA8ATF1G64HZ-3G2J1 by Micron Technology

MTA8ATF1G64HZ-3G2J1

Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA16ATF1G64HZ-2G1A2 by Micron Technology

MTA16ATF1G64HZ-2G1A2

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 1G;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF1G64HZ-2G3A2 by Micron Technology

MTA16ATF1G64HZ-2G3A2

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 69.6 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

260

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

ZIG-ZAG

3.7 mm

MTA16ATF2G64HZ-2G3A1 by Micron Technology

MTA16ATF2G64HZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 2147483648 words;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

ZIG-ZAG

3.7 mm

MTA18ASF2G72HZ-2G3A1 by Micron Technology

MTA18ASF2G72HZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

ZIG-ZAG

3.7 mm

MTA8ATF1G64HZ-2G3A1 by Micron Technology

MTA8ATF1G64HZ-2G3A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

ZIG-ZAG

3.7 mm

MTA8ATF51264HZ-2G6B1 by Micron Technology

MTA8ATF51264HZ-2G6B1

Micron Technology

Micron Technology's MTA8ATF51264HZ-2G6B1 is a 512MX72 DDR DRAM MODULE with 38654705664-bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

260

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

3.7 mm

MTA18ASF1G72HZ-2G6B1 by Micron Technology

MTA18ASF1G72HZ-2G6B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

ZIG-ZAG

3.7 mm

MTA16ATF2G64HZ-2G3B1 by Micron Technology

MTA16ATF2G64HZ-2G3B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA18ASF2G72HZ-2G3B1 by Micron Technology

MTA18ASF2G72HZ-2G3B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA8ATF1G64HZ-2G3B1 by Micron Technology

MTA8ATF1G64HZ-2G3B1

Micron Technology

MTA8ATF1G64HZ-2G3B1 by Micron Technology is a 1GX72 DDR DRAM MODULE with 1073741824 words, operating at 1.2V. It features SYNCHRONOUS mode, SELF REFRESH capability, and SINGLE BANK PAGE BURST access. Ideal for applications requiring high memory density and speed in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA4ATF51264HZ-2G3B1 by Micron Technology

MTA4ATF51264HZ-2G3B1

Micron Technology

Micron's MTA4ATF51264HZ-2G3B1 is a 512MX64 DDR DRAM MODULE with CMOS tech. Operating at 1.2V, it offers 536870912 words memory width and 34359738368 bit density. Ideal for applications requiring high-speed synchronous operation in microelectronic assemblies.

SINGLE BANK PAGE BURST

WD-MAX

R-XZMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

2.5 mm

MTA18ASF2G72HZ-2G6D1 by Micron Technology

MTA18ASF2G72HZ-2G6D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF2G64HZ-3G2E1 by Micron Technology

MTA16ATF2G64HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA4ATF51264HZ-3G2E1 by Micron Technology

MTA4ATF51264HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

SINGLE BANK PAGE BURST

WD-MAX

R-XZMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

2.5 mm

MTA8ATF1G64HZ-3G2E1 by Micron Technology

MTA8ATF1G64HZ-3G2E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

NOT SPECIFIED

3.7 mm

MTA4ATF51264HZ-2G6E1 by Micron Technology

MTA4ATF51264HZ-2G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

WD-MAX

R-XZMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

2.5 mm

MTA8ATF2G64HZ-3G2B1 by Micron Technology

MTA8ATF2G64HZ-3G2B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA4ATF1G64HZ-3G2B1 by Micron Technology

MTA4ATF1G64HZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N260;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

R-XDMA-N260

68719476736 bit

DDR4 DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

NO

CMOS

OTHER

NO LEAD

DUAL

MTA16ATF2G64HZ-2G1B1 by Micron Technology

MTA16ATF2G64HZ-2G1B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Shape: RECTANGULAR; No. of Functions: 1; Maximum Operating Temperature: 95 Cel;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF2G64HZ-2G6E1 by Micron Technology

MTA16ATF2G64HZ-2G6E1

Micron Technology

Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

137438953472 bit

DDR DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA8ATF2G64HZ-3G2E1 by Micron Technology

MTA8ATF2G64HZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N260

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

NO

CMOS

OTHER

NO LEAD

DUAL

MTA18ASF2G72HBZ-3G2E1 by Micron Technology

MTA18ASF2G72HBZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1; Maximum Operating Temperature: 105 Cel;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

R-XZMA-N260

69.6 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

.468 Amp

1989 mA

1.2

NO

CMOS

NO LEAD

ZIG-ZAG

3.7 mm

MTA4ATF1G64HZ-3G2E1 by Micron Technology

MTA4ATF1G64HZ-3G2E1

Micron Technology

Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

R-XDMA-N260

68719476736 bit

DDR4 DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

YES

NO

CMOS

OTHER

NO LEAD

DUAL

30

MTA16ATF4G64HZ-3G2E1 by Micron Technology

MTA16ATF4G64HZ-3G2E1

Micron Technology

DDR4 DRAM MODULE; No. of Terminals: 260; Package Code: DIMM; JESD-30 Code: R-XDMA-N260; Memory Density: 274877906944 bit; Terminal Position: DUAL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

R-XDMA-N260

274877906944 bit

DDR4 DRAM MODULE

64

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

MICROELECTRONIC ASSEMBLY

YES

.608 Amp

1808 mA

1.2

NO

CMOS

NO LEAD

DUAL

MTA18ASF2G72HZ-2G6E1 by Micron Technology

MTA18ASF2G72HZ-2G6E1

Micron Technology

Micron Technology's MTA18ASF2G72HZ-2G6E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1333 MHz. It features a memory density of 154618822656 bit and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with self-refresh capability.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1333 MHz

COMMON

4,8

R-XDMA-N260

69.6 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

3-STATE

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

4,8

.45 Amp

1881 mA

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA8ATF2G64HZ-3G2E2 by Micron Technology

MTA8ATF2G64HZ-3G2E2

Micron Technology

Micron Technology's MTA8ATF2G64HZ-3G2E2 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in microelectronic assemblies.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

R-XDMA-N260

69.6 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

DIMM260,20

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

.304 Amp

1480 mA

1.2

NO

CMOS

OTHER

NO LEAD

.5 mm

DUAL

3.7 mm

MTA18ASF4G72HZ-3G2F1 by Micron Technology

MTA18ASF4G72HZ-3G2F1

Micron Technology

Micron Technology's MTA18ASF4G72HZ-3G2F1 is a DDR4 DRAM module with 4GX72 organization, operating at 1612.9 MHz. It features synchronous operation, self-refresh capability, and a common I/O type. Ideal for high-performance computing applications requiring fast data processing and storage.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612.9 MHz

COMMON

R-XZMA-N260

69.6 mm

309237645312 bit

DDR4 DRAM MODULE

72

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

.684 Amp

1845 mA

1.2

NO

CMOS

NO LEAD

ZIG-ZAG

3.7 mm

MTA16ATF4G64HZ-3G2F1 by Micron Technology

MTA16ATF4G64HZ-3G2F1

Micron Technology

Micron's MTA16ATF4G64HZ-3G2F1 is a DDR4 DRAM module with 4GX64 organization, 64-bit memory width, and 274877906944 bit memory density. It operates synchronously with self-refresh capability and dual bank page burst access mode. Ideal for applications requiring high-speed data processing in compact systems.

DUAL BANK PAGE BURST

AUTO REFRESH AND SELF REFRESH; WIDTH MAX

R-XDMA-N260

69.6 mm

274877906944 bit

DDR4 DRAM MODULE

64

1

1

260

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

DIMM260,20

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

NO

CMOS

NO LEAD

.5 mm

DUAL

3.7 mm