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LPDDR2 DRAM DRAM 91

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
EDB5432BEPA-1DIT-F-D by Micron Technology

EDB5432BEPA-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

EDB5432BEPA-1DIT-F-R by Micron Technology

EDB5432BEPA-1DIT-F-R

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

EDB4432BBBJ-1DAAT-F-D by Micron Technology

EDB4432BBBJ-1DAAT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAAT-F-D is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and low power consumption in compact devices.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.75 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

EDB4432BBBJ-1DAIT-F-D by Micron Technology

EDB4432BBBJ-1DAIT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB4432BBBJ-1DAUT-F-D by Micron Technology

EDB4432BBBJ-1DAUT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-D is a PLASTIC/EPOXY DRAM with SYNCHRONOUS operating mode and SELF REFRESH capability. It has a memory density of 4294967296 bit and is commonly used in AUTOMOTIVE applications.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.75 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

IS43LD16640C-25BLI by Integrated Silicon Solution

IS43LD16640C-25BLI

Integrated Silicon Solution

IS43LD16640C-25BLI by Integrated Silicon Solution is a 64MX16 LPDDR2 DRAM with 1073741824 bit memory density. It operates synchronously at 1.2V, featuring self-refresh and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed and low-power memory solutions.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10

10 mm

EDB8164B4PK-1D-F-D by Micron Technology

EDB8164B4PK-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Memory Density: 8589934592 bit; Terminal Form: BALL;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B220

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

220

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

14 mm

EDB8164B4PR-1D-F-D by Micron Technology

EDB8164B4PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Terminal Position: BOTTOM;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1D-F-D by Micron Technology

EDB8164B4PT-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Minimum Supply Voltage (Vsup): 1.14 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1DAT-F-D by Micron Technology

EDB8164B4PT-1DAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB8164B4PT-1DAT-F-R by Micron Technology

EDB8164B4PT-1DAT-F-R

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 134217728 words; Maximum Seated Height: .8 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1DIT-F-D by Micron Technology

EDB8164B4PT-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

12 mm

EDBA164B2PR-1D-F-D by Micron Technology

EDBA164B2PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Surface Mount: YES; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB4432BBPA-1D-F-D by Micron Technology

EDB4432BBPA-1D-F-D

Micron Technology

Micron Technology's EDB4432BBPA-1D-F-D is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

EDB4432BBPA-1D-F-R by Micron Technology

EDB4432BBPA-1D-F-R

Micron Technology

Micron Technology's EDB4432BBPA-1D-F-R is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

EDB8132B4PB-8D-F-D by Micron Technology

EDB8132B4PB-8D-F-D

Micron Technology

Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB8132B4PM-1D-F-D by Micron Technology

EDB8132B4PM-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Functions: 1;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.82 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDBA232B2PB-1D-F-D by Micron Technology

EDBA232B2PB-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.2; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

17179869184 bit

LPDDR2 DRAM

32

1

1

168

536870912 words

512M

SYNCHRONOUS

512MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

EDBA232B2PF-1D-F-D by Micron Technology

EDBA232B2PF-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: TFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

17179869184 bit

LPDDR2 DRAM

32

1

1

168

536870912 words

512M

SYNCHRONOUS

512MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.02 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

EDBM432B3PF-1D-F-D by Micron Technology

EDBM432B3PF-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Minimum Supply Voltage (Vsup): 1.14 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

168

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.92 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

EDB1332BDBH-1DAAT-F-D by Micron Technology

EDB1332BDBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Maximum Seated Height: 1 mm;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT42L32M16D1FE-25IT:A by Micron Technology

MT42L32M16D1FE-25IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 121; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

FOUR BANK PAGE BURST

SELF REFRESH

R-PBGA-B121

e1

8 mm

536870912 bit

LPDDR2 DRAM

16

1

1

121

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

6.5 mm

EDB4432BBBJ-1D-F-R by Micron Technology

EDB4432BBBJ-1D-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-R is a 128MX32 LPDDR2 DRAM with 134 terminals in a grid array package. Operating at 1.2V, it offers synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications. The very thin profile and fine pitch make it suitable for compact electronic devices requiring fast and efficient data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

EDB1316BDBH-1DIT-F-D by Micron Technology

EDB1316BDBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

EDB1332BDBH-1DIT-F-D by Micron Technology

EDB1332BDBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 32MX32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

EDB1332BDBH-1DIT-F-RTR by Micron Technology

EDB1332BDBH-1DIT-F-RTR

Micron Technology

LPDDR2 DRAM; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); JESD-609 Code: e1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

e1

LPDDR2 DRAM

3

260

Tin/Silver/Copper (Sn/Ag/Cu)

30

EDB2432B4MA-1DIT-F-D by Micron Technology

EDB2432B4MA-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

30

10 mm

EDB4416BBBH-1DIT-F-D by Micron Technology

EDB4416BBBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

16

1

1

134

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB4416BBBH-1DIT-F-RTR by Micron Technology

EDB4416BBBH-1DIT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

16

1

1

134

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB4416BBBH-1DIT-F-R by Micron Technology

EDB4416BBBH-1DIT-F-R

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

16

1

1

134

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB4432BBBJ-1D-F-D by Micron Technology

EDB4432BBBJ-1D-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals in a very thin profile grid array package. Operating at 1.2V, it offers synchronous access mode and self-refresh capability for low power consumption. Ideal for applications requiring high memory density and fast data processing in compact devices.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

EDB1316BDBH-1DAAT-F-D by Micron Technology

EDB1316BDBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Length: 11.5 mm;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAAT-F-RTR by Micron Technology

EDB1316BDBH-1DAAT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAUT-F-D by Micron Technology

EDB1316BDBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAUT-F-RTR by Micron Technology

EDB1316BDBH-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64M;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1332BDBH-1DAUT-F-D by Micron Technology

EDB1332BDBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Access Mode: SINGLE BANK PAGE BURST;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1332BDBH-1DAUT-F-RTR by Micron Technology

EDB1332BDBH-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11.5 mm;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAAT-F-D by Micron Technology

EDB2432B4MA-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .65 mm; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAAT-F-RTR by Micron Technology

EDB2432B4MA-1DAAT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 10 mm;

SINGLE BANK PAGE BURST

SELF REFRESH

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAUT-F-D by Micron Technology

EDB2432B4MA-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAUT-F-RTR by Micron Technology

EDB2432B4MA-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB8132B4PM-1DAT-F-D by Micron Technology

EDB8132B4PM-1DAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Maximum Seated Height: .82 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.82 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)

BALL

.5 mm

BOTTOM

30

12 mm

IS43LD32640B-18BLI-TR by Integrated Silicon Solution

IS43LD32640B-18BLI-TR

Integrated Silicon Solution

IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm