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LPDDR2 DRAM DRAM 91

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT42L64M32D1LF-18IT:C by Micron Technology

MT42L64M32D1LF-18IT:C

Micron Technology

Micron Technology's MT42L64M32D1LF-18IT:C is a LPDDR2 DRAM with 168 terminals, operating at 533 MHz. It has a memory density of 2147483648 bits and supports sequential burst lengths of 4, 8, and 16. Ideal for industrial applications requiring high-speed data processing in temperatures ranging from -40 to 85°C.

5.5 ns

533 MHz

COMMON

4,8,16

S-PBGA-B168

2147483648 bit

LPDDR2 DRAM

168

85 Cel

-40 Cel

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

1.2,1.8

Not Qualified

8192

4,8,16

.000025 Amp

DRAMs

220 mA

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MT42L128M64D4KJ-25IT:A by Micron Technology

MT42L128M64D4KJ-25IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -25 Cel;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B216

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

216

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.4 mm

BOTTOM

30

12 mm

MT42L128M64D4LC-3IT:A by Micron Technology

MT42L128M64D4LC-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B240

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

240

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT42L64M64D2MC-3IT:A by Micron Technology

MT42L64M64D2MC-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B240

14 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

240

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT42L64M32D1KL-3IT:A by Micron Technology

MT42L64M32D1KL-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT42L128M32D1GU-25WT:A by Micron Technology

MT42L128M32D1GU-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO OPERATES AT MINIMUM 1.7 V

400 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D2KL-25IT:A by Micron Technology

MT42L128M32D2KL-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Minimum Supply Voltage (Vsup): 1.7 V;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L128M32D2KL-3IT:A by Micron Technology

MT42L128M32D2KL-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.8; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L128M32D2MH-25IT:A by Micron Technology

MT42L128M32D2MH-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Width: 11 mm;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

11 mm

MT42L128M64D4KJ-3IT:A by Micron Technology

MT42L128M64D4KJ-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: SELF REFRESH; IT ALSO REQUIRES 1.2V NOM; No. of Words Code: 128M;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D4LD-25IT:A by Micron Technology

MT42L128M64D4LD-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; JESD-30 Code: S-PBGA-B220;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B220

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

220

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

14 mm

MT42L128M64D4LD-3IT:A by Micron Technology

MT42L128M64D4LD-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: 1 mm; Terminal Pitch: .5 mm;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B220

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

220

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

14 mm

MT42L192M32D3LE-3IT:A by Micron Technology

MT42L192M32D3LE-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Width: 12 mm; Self Refresh: YES;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

6442450944 bit

LPDDR2 DRAM

32

1

1

168

201326592 words

192M

SYNCHRONOUS

192MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D4KP-25IT:A by Micron Technology

MT42L256M32D4KP-25IT:A

Micron Technology

Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D4KP-3IT:A by Micron Technology

MT42L256M32D4KP-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D4MG-25IT:A by Micron Technology

MT42L256M32D4MG-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: TFBGA; Package Shape: SQUARE; No. of Ports: 1; Organization: 256MX32;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B134

11.5 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

134

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

11.5 mm

MT42L256M32D4MG-3IT:A by Micron Technology

MT42L256M32D4MG-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: TFBGA; Package Shape: SQUARE; Memory Width: 32; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B134

11.5 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

134

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

11.5 mm

MT42L64M32D1KL-25IT:A by Micron Technology

MT42L64M32D1KL-25IT:A

Micron Technology

LPDDR2 DRAM; Package Code: VFBGA; Self Refresh: YES; Minimum Supply Voltage (Vsup): 1.14 V; Memory Density: 2147483648 bit; Maximum Supply Voltage (Vsup): 1.3 V;

SINGLE BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

67108864 words

64M

SYNCHRONOUS

64MX32

VFBGA

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

CMOS

.5 mm

NOT SPECIFIED

12 mm

MT42L64M64D2KH-25IT:A by Micron Technology

MT42L64M64D2KH-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.7 V; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

216

67108864 words

64M

SYNCHRONOUS

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L64M64D2KH-3IT:A by Micron Technology

MT42L64M64D2KH-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; No. of Ports: 1;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

216

67108864 words

64M

SYNCHRONOUS

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L64M64D2MP-25IT:A by Micron Technology

MT42L64M64D2MP-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 67108864 words; Memory Width: 64;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B220

14 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

220

67108864 words

64M

SYNCHRONOUS

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

14 mm

MT42L32M32D2AC-25AAT:A by Micron Technology

MT42L32M32D2AC-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Surface Mount: YES;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT42L32M32D2AC-25AIT:A by Micron Technology

MT42L32M32D2AC-25AIT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.95 V;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D1LF-25WT:A by Micron Technology

MT42L128M32D1LF-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY

400 MHz

COMMON

4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.75 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT42L16M32D1AC-25AAT:A by Micron Technology

MT42L16M32D1AC-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B134; JESD-609 Code: e1;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

e1

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

10 mm

MT42L16M32D1AC-25AIT:A by Micron Technology

MT42L16M32D1AC-25AIT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11.5 mm;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

R-PBGA-B134

e1

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D1GU-18WT:A by Micron Technology

MT42L128M32D1GU-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D1LH-25WT:A by Micron Technology

MT42L128M32D1LH-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.65 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2LL-18WT:A by Micron Technology

MT42L128M64D2LL-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B216

e1

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2LL-25WT:A by Micron Technology

MT42L128M64D2LL-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B216

e1

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2MC-18WT:A by Micron Technology

MT42L128M64D2MC-18WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Nominal Supply Voltage / Vsup (V): 1.8;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B240

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

240

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

14 mm

MT42L128M64D2MP-25WT:A by Micron Technology

MT42L128M64D2MP-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 220; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B220

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

220

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA220,27X27,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT42L256M32D2LG-25WT:A by Micron Technology

MT42L256M32D2LG-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D2LK-18WT:A by Micron Technology

MT42L256M32D2LK-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

216

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.0001 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT42L256M64D4EV-18WT:A by Micron Technology

MT42L256M64D4EV-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B253

e1

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

11 mm

MT42L256M64D4EV-25WT:A by Micron Technology

MT42L256M64D4EV-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B253

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

MT42L256M64D4LD-25WT:A by Micron Technology

MT42L256M64D4LD-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 220; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B220

14 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

220

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA220,27X27,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT42L256M64D4LM-18WT:A by Micron Technology

MT42L256M64D4LM-18WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Terminal Form: BALL;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L256M64D4LM-25WT:A by Micron Technology

MT42L256M64D4LM-25WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 256M; Terminal Finish: TIN SILVER COPPER;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

e1

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L384M32D3LP-18WT:A by Micron Technology

MT42L384M32D3LP-18WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .4 mm; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

216

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.82 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L384M32D3LP-25WT:A by Micron Technology

MT42L384M32D3LP-25WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 384MX32; No. of Words Code: 384M;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

216

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.82 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L16M32D1LG-25AAT:A by Micron Technology

MT42L16M32D1LG-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .8 mm; Terminal Form: BALL;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

S-PBGA-B168

e1

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

IS43LD32128B-25BLI by Integrated Silicon Solution

IS43LD32128B-25BLI

Integrated Silicon Solution

IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.

MULTI BANK PAGE BURST

also operates with 1.8v nom supply

400 MHz

COMMON

4,8,16

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.1 mm

YES

4,8,16

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

MT42L64M32D1TK-18AAT:C by Micron Technology

MT42L64M32D1TK-18AAT:C

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

533 MHz

COMMON

4,8,16

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

AEC-Q100

.7 mm

YES

4,8,16

.000025 Amp

DRAMs

220 mA

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

EDB5432BEBH-1DAAT-F-D by Micron Technology

EDB5432BEBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm; Organization: 16MX32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

EDB5432BEBH-1DAUT-F-D by Micron Technology

EDB5432BEBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEBH-1DIT-F-D by Micron Technology

EDB5432BEBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEPA-1DAAT-F-D by Micron Technology

EDB5432BEPA-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm; Minimum Supply Voltage (Vsup): 1.14 V;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm