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YES Diodes & Rectifiers 2,400+

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
MBR20100CS2-E1 by Diodes Incorporated

MBR20100CS2-E1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW NOISE

HIGH VOLTAGE POWER

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.85 V

TO-263AB

R-PSSO-G2

e3

3

150 A

2

1

2

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

MBR20100CS2-G1 by Diodes Incorporated

MBR20100CS2-G1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW NOISE

HIGH VOLTAGE POWER

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.85 V

TO-263AB

R-PSSO-G2

e3

3

150 A

2

1

2

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

MBR20100CS2TR-E1 by Diodes Incorporated

MBR20100CS2TR-E1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW NOISE

HIGH VOLTAGE POWER

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.85 V

TO-263AB

R-PSSO-G2

e3

3

150 A

2

1

2

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

MBR20100CS2TR-G1 by Diodes Incorporated

MBR20100CS2TR-G1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW NOISE

HIGH VOLTAGE POWER

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.85 V

TO-263AB

R-PSSO-G2

e3

3

150 A

2

1

2

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

PMEG2010AEK,115 by NXP Semiconductors

PMEG2010AEK,115

NXP Semiconductors

RECTIFIER DIODE; Surface Mount: YES; No. of Elements: 1; Config: SINGLE; Technology: SCHOTTKY; Maximum Operating Temperature: 150 Cel;

SINGLE

RECTIFIER DIODE

.22 V

4.5 A

1

1

150 Cel

1 A

20 V

Rectifier Diodes

YES

SCHOTTKY

1PS181,135 by NXP Semiconductors

1PS181,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS184,115 by NXP Semiconductors

1PS184,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS184,135 by NXP Semiconductors

1PS184,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS193,115 by NXP Semiconductors

1PS193,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

1

1

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS193,135 by NXP Semiconductors

1PS193,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

1

1

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS226,135 by NXP Semiconductors

1PS226,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS59SB10,115 by NXP Semiconductors

1PS59SB10,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

1

1

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

2 uA

.005 us

YES

SCHOTTKY

TIN

GULL WING

DUAL

1PS59SB14,115 by NXP Semiconductors

1PS59SB14,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

2

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

2 uA

.005 us

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

1PS59SB15,115 by NXP Semiconductors

1PS59SB15,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

2

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

2 uA

.005 us

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

1PS59SB16,115 by NXP Semiconductors

1PS59SB16,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

2

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

2 uA

.005 us

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

1PS59SB20,115 by NXP Semiconductors

1PS59SB20,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

TO-236

R-PDSO-G3

e3

1

1

3

125 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

SCHOTTKY

TIN

GULL WING

DUAL

BAS16T,115 by NXP Semiconductors

BAS16T,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

.715 V

R-PDSO-G3

e3

1

.5 A

1

1

3

150 Cel

-65 Cel

.155 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.17 W

Not Qualified

85 V

.004 us

Rectifier Diodes

YES

TIN

GULL WING

DUAL

30

BAS216,115 by NXP Semiconductors

BAS216,115

NXP Semiconductors

BAS216,115 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at up to 150°C. Ideal for applications requiring low reverse recovery time and high peak reverse voltage capabilities.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

.4 W

Not Qualified

85 V

1 uA

.004 us

Rectifier Diodes

YES

WRAP AROUND

DUAL

40

BAS216,135 by NXP Semiconductors

BAS216,135

NXP Semiconductors

BAS216,135 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time and low reverse current such as power supplies and battery chargers.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.4 W

Not Qualified

85 V

1 uA

.004 us

YES

WRAP AROUND

DUAL

NOT SPECIFIED

BAT254,115 by NXP Semiconductors

BAT254,115

NXP Semiconductors

BAT254,115 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.8V and output current of 0.2A. It has a fast reverse recovery time of 0.005us, making it suitable for high-speed applications in electronics requiring low power consumption and small outline packages. The diode's peak repetitive reverse voltage is 30V, ideal for circuits where efficient energy conversion is crucial.

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-CDSO-R2

.6 A

1

1

2

125 Cel

.2 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.005 us

Rectifier Diodes

YES

SCHOTTKY

WRAP AROUND

DUAL

BYD17D,115 by NXP Semiconductors

BYD17D,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

225 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

200 V

1 uA

3 us

200 V

YES

AVALANCHE

WRAP AROUND

END

BYD17G,115 by NXP Semiconductors

BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

450 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

400 V

1 uA

3 us

400 V

YES

AVALANCHE

WRAP AROUND

END

BYD17J,115 by NXP Semiconductors

BYD17J,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

650 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

600 V

1 uA

3 us

600 V

YES

AVALANCHE

WRAP AROUND

END

BYD17K,135 by NXP Semiconductors

BYD17K,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

800 V

3 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD37M,115 by NXP Semiconductors

BYD37M,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

1100 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

1000 V

1 uA

.3 us

1000 V

YES

AVALANCHE

WRAP AROUND

END

BYD77B,115 by NXP Semiconductors

BYD77B,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

100 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD77D,115 by NXP Semiconductors

BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

PRLL4001,115 by NXP Semiconductors

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.68 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

CSD10060G by Wolfspeed

CSD10060G

Wolfspeed

CSD10060G by Wolfspeed is a Schottky rectifier diode with 600V reverse voltage and 16.5A output current. It features a max forward voltage of 1.8V and operates at temperatures up to 175°C. Ideal for applications requiring high efficiency, this diode has a gull wing terminal form and plastic/epoxy package body material.

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-263AB

R-PSSO-G2

250 A

1

1

2

175 Cel

16.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

600 V

Rectifier Diodes

YES

SCHOTTKY

GULL WING

SINGLE

NOT SPECIFIED

NRVTS10120MFST1G by Onsemi

NRVTS10120MFST1G

Onsemi

NRVTS10120MFST1G by Onsemi is a Schottky rectifier diode with 120V reverse voltage and 10A output current. It operates b/w -55 to 150 °C, suitable for efficiency applications. The package is small outline, surface mountable, with matte tin terminals in a rectangular shape.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.825 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

55 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS10120MFST3G by Onsemi

NRVTS10120MFST3G

Onsemi

NRVTS10120MFST3G by Onsemi is a Schottky rectifier diode with 120V max repetitive peak reverse voltage and 10A max output current. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a plastic/epoxy body, matte tin finish, and dual terminals in a small outline package style.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.825 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

55 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS1045EMFST3G by Onsemi

NRVTS1045EMFST3G

Onsemi

NRVTS1045EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max reverse current of 50uA. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 45V and is designed for surface mount installation in small outline packages.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F5

e3

1

210 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS1545EMFST1G by Onsemi

NRVTS1545EMFST1G

Onsemi

NRVTS1545EMFST1G by Onsemi is a Schottky rectifier diode with 45V max reverse voltage, 15A output current, and 0.6V forward voltage. It operates b/w -55 to 175°C, ideal for efficiency applications. The package is small outline with matte tin finish and dual terminals for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F5

e3

1

210 A

1

1

5

175 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS1545EMFST3G by Onsemi

NRVTS1545EMFST3G

Onsemi

NRVTS1545EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 15A and max reverse current of 50uA. It operates b/w -55 to 175 °C, suitable for efficiency applications. With a package style of small outline, it features a peak reflow temperature of 260°C and is AEC-Q101 compliant.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F5

e3

1

210 A

1

1

5

175 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS10120MFST1G by Onsemi

NTS10120MFST1G

Onsemi

NTS10120MFST1G by Onsemi is a Schottky rectifier diode with max output current of 10A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a package style of small outline, suitable for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.825 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

55 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS10120MFST3G by Onsemi

NTS10120MFST3G

Onsemi

NTS10120MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.825 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

55 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS1045EMFST1G by Onsemi

NTS1045EMFST1G

Onsemi

NTS1045EMFST1G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and has a package style of small outline, ideal for compact designs.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F5

e3

1

210 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS1045EMFST3G by Onsemi

NTS1045EMFST3G

Onsemi

NTS1045EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. This single-configured diode has a small outline package style and is surface mountable.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F5

e3

1

210 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

FLAT

DUAL

30

NTS1545MFST1G by Onsemi

NTS1545MFST1G

Onsemi

NTS1545MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 15A and forward voltage of 0.57V. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminals for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.57 V

R-PDSO-F5

e3

1

210 A

1

1

5

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

120 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS1545MFST3G by Onsemi

NTS1545MFST3G

Onsemi

NTS1545MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 15A and max repetitive peak reverse voltage of 45V. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.57 V

R-PDSO-F5

e3

1

210 A

1

1

5

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

120 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTSB40200CTG by Onsemi

NTSB40200CTG

Onsemi

NTSB40200CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -55 to 150 °C, has a max reverse voltage of 200V, and is ideal for efficiency applications.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.45 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

NTSB40200CTT4G by Onsemi

NTSB40200CTT4G

Onsemi

NTSB40200CTT4G by Onsemi is a Schottky rectifier diode with 200V max reverse voltage and 20A output current. It has common cathode configuration, small outline package style, and operates b/w -55 to 150 °C. Ideal for efficiency applications, it features a max forward voltage of 1.45V and matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.45 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SJPW-T4 by Sanken Electric

SJPW-T4

Sanken Electric

Sanken Electric's SJPW-T4 is a Schottky rectifier diode with max output current of 5A and max forward voltage of 0.55V. It operates b/w -40 to 150°C, ideal for efficiency applications due to its low VF and high peak reverse voltage of 40V. Suitable for surface mount with plastic/epoxy body material in small outline package style.

HIGH RELIABILITY

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.55 V

R-PDSO-C2

80 A

1

1

2

150 Cel

-40 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

40 V

500 uA

YES

SCHOTTKY

C BEND

DUAL

NOT SPECIFIED

VS-20ETF12STRL-M3 by Vishay Intertechnology

VS-20ETF12STRL-M3

Vishay Intertechnology

VS-20ETF12STRL-M3 by Vishay Intertechnology is a fast soft recovery rectifier diode with 1200V peak reverse voltage and 20A output current. It has a max reverse recovery time of 0.4us and operates b/w -40 to 150°C. Ideal for applications requiring high-speed switching and low forward voltage drop in compact electronic devices.

FREE WHEELING DIODE

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.31 V

TO-263AB

R-PSSO-G2

e3

1

355 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

1200 V

100 uA

.4 us

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VS-20ETF12STRR-M3 by Vishay Intertechnology

VS-20ETF12STRR-M3

Vishay Intertechnology

VS-20ETF12STRR-M3 by Vishay Intertechnology is a single diode with fast soft recovery. It has a max reverse recovery time of 0.4 us and can handle a max output current of 20 A. Ideal for applications requiring high-speed rectification, it operates b/w -40 to 150 °C and features a peak reflow temperature of 245 C.

FREE WHEELING DIODE

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.31 V

TO-263AB

R-PSSO-G2

e3

1

355 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

1200 V

100 uA

.4 us

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VS-20ETS08STRR-M3 by Vishay Intertechnology

VS-20ETS08STRR-M3

Vishay Intertechnology

VS-20ETS08STRR-M3 by Vishay Intertechnology is a single rectifier diode with 800V peak reverse voltage and 20A output current. It operates in high voltage applications, has a max forward voltage of 1.1V, and can withstand temperatures from -40 to 150°C. Ideal for surface mount installations due to its small outline package style.

HIGH VOLTAGE

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

TO-263AB

R-PSSO-G2

e3

1

300 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

800 V

100 uA

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VS-20ETS12STRR-M3 by Vishay Intertechnology

VS-20ETS12STRR-M3

Vishay Intertechnology

VS-20ETS12STRR-M3 by Vishay Intertechnology is a single rectifier diode with 1200V peak reverse voltage and 20A output current. It operates in temperatures from -40 to 150°C, making it suitable for high voltage applications. The diode has a matte tin finish, gull wing terminals, and is surface mountable in a small outline package.

HIGH VOLTAGE

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

TO-263AB

R-PSSO-G2

e3

1

300 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

1200 V

100 uA

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VSSA210HM3/61T by Vishay Intertechnology

VSSA210HM3/61T

Vishay Intertechnology

Vishay Intertechnology's VSSA210HM3/61T is a Schottky rectifier diode with 100V peak reverse voltage, 1.7A output current, and 0.7V forward voltage. It operates b/w -40 to 150°C, ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance and small outline package.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AC

R-PDSO-C2

60 A

1

1

2

150 Cel

-40 Cel

1.7 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

150 uA

YES

SCHOTTKY

C BEND

DUAL