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SDINBDG4-32G

Western Digital

SDINBDG4-32G by Western Digital

SDINBDG4-32G by Western Digital is a 32GX8 MLC NAND flash memory with 3000 WE cycles. Operating at 3.3V, it offers 274877906944-bit density and serial interface for applications requiring high endurance and compact design in a grid array package measuring 11mm x 13.5mm x 1mm.

Median Price

$29.676

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Verical

USA . 58 parts In-Stock

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$29.676

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Nova Conductors

Japan . 200 parts In-Stock

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$21.280

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$21.280

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Bristol Electronics

USA . 50 parts In-Stock

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$58.260

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$49.300

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Vyrian

USA . 515 parts In-Stock

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Cyclops Electronics Ltd

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LIBRA Elektronik GmbH

Germany . 78 parts In-Stock

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ComSIT Distribution GmbH

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Continental Prestige Electronics

USA . 3,064 parts In-Stock

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$18.910

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$18.532

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Netroflash

USA . 1,000 parts In-Stock

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$21.280

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$20.216

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$19.790

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$21.280

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Infinite Electronics LLP (Excess)

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Argo Parts USA

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RC Electronics

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Kepictronics

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Speed Components Ltd (Excess)

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Overview

SanDisk iNAND® 7250 Industrial Embedded Flash Drives optimize system performance and enable real-time analytics at the edge. The iNAND® 7250 Flash Drives are optimized for industrial applications with a wide range of operational requirements, providing high reliability and endurance for embedded platforms. The drives are tested and developed to withstand demanding environmental conditions. Advanced flash memory management firmware offers enhanced power immunity, ECC, wear leveling, and bad block management. The iNAND® 7250 Flash Drives have an operating temperature range of -40°C to +85°C and an industrial extended temperature of -25°C to +85°C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures that data is transferred efficiently and accurately, resulting in faster performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is common and widely supported, making it compatible with a variety of devices.

Memory Density: 274877906944 bit

With a high memory density, this flash memory product can store a large amount of data, perfect for applications requiring extensive storage capabilities.

Endurance: 3000 Write/Erase Cycles

The high endurance rating of 3000 write/erase cycles ensures reliable and long-lasting performance, making it suitable for frequent data read/write operations.

Technical Specifications

Flash Memory SDINBDG4-32G attributes and parameters. Explore more Flash Memory devices from Western Digital

Specs

Endurance:

3000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B153

Length:

13.5 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

MLC NAND TYPE

Width:

11 mm

Trade Compliance

SDINBDG4-32G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Western Digital

Western Digital has long been at the forefront of game changing innovations. From the invention of the first hard drive to recent advancements in 3D NAND our journey of innovation continues to inspire those who dare to think big. Wherever you are, Western Digital is with you every step of the way. We are always at the cusp of innovation, pushing the boundaries of technology to make what you thought was once impossible, possible.

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