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SUM110P04-04L-E3

Vishay Intertechnology

SUM110P04-04L-E3 by Vishay Intertechnology

Vishay Intertechnology SUM110P04-04L-E3 is a P-channel FET with 40V DS breakdown voltage, 240A IDM, and 0.0042 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 375W.

Median Price

$2.646

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8 parts In-Stock

1+ parts

$2.333

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8

$2.333

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Chip1Stop

Japan . 680 parts In-Stock

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$2.960

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680

$2.960

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Mouser Electronics

USA . 513 parts In-Stock

1+ parts

$6.020

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$2.890

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$2.490

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513

$6.020

$2.890

$2.490

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DigiKey

USA . 8,805 parts In-Stock

1+ parts

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$2.291

10k+ parts

$2.143

8,805

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$2.291

$2.143

Future Electronics

Canada . 5,600 parts In-Stock

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$4.460

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$4.400

5,600

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$4.460

$4.400

Farnell

UK . 800 parts In-Stock

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$2.170

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$1.820

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800

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$2.170

$1.820

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Verical

USA . 8 parts In-Stock

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8

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$3.101

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100

$3.101

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Chip Stock

USA . 35,725 parts In-Stock

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35,725

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NAC Semi

USA . 4,800 parts In-Stock

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$4.520

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$4.110

4,800

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$4.520

$4.110

Vyrian

USA . 2,550 parts In-Stock

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2,550

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ComSIT Distribution GmbH

Germany . 1,283 parts In-Stock

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Prism Electronics

USA . 51 parts In-Stock

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Bristol Electronics

USA . 32 parts In-Stock

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Semtec, LLC

USA . 11 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,598 parts In-Stock

1+ parts

$0.620

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2,598

$0.620

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Corohmni

South Africa . 156 parts In-Stock

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$1.597

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156

$1.597

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Semicontronic

India . 2,354 parts In-Stock

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$1.710

100+ parts

$1.667

1k+ parts

$1.659

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2,354

$1.710

$1.667

$1.659

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Ampacity Inc.

Singapore . 2,524 parts In-Stock

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$2.020

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2,524

$2.020

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Continental Prestige Electronics

USA . 6,238 parts In-Stock

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$3.101

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$3.039

6,238

$3.101

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$3.039

Argo Parts USA

USA . 2,453 parts In-Stock

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$3.101

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2,453

$3.101

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Netroflash

USA . 1,000 parts In-Stock

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$3.101

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$2.946

10k+ parts

$2.884

1,000

$3.101

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$2.946

$2.884

Microchip USA

USA . 4,580 parts In-Stock

1+ parts

$19.373

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4,580

$19.373

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RC Electronics

USA . 20,000 parts In-Stock

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Kepictronics

USA . 16,000 parts In-Stock

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Perfect Parts

USA . 10,662 parts In-Stock

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Authorized Procurement Solutions

USA . 3,200 parts In-Stock

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3,200

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Overview

Unleash the power of innovation with the Vishay Intertechnology SUM110P04-04L-E3 Power FET. Designed for seamless switching applications, this P-channel transistor offers unmatched reliability and efficiency. With a maximum pulse drain current of 240A and a minimal on-resistance of 0.0042 ohm, this transistor delivers outstanding performance in a compact package. Trust Vishay Intertechnology's reputation for quality and experience in the field of semiconductor technology to elevate your projects to new heights. Whether you're optimizing power management systems or enhancing automotive electronics, this transistor is the key to unlocking limitless possibilities. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the FET, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs have low on-state resistance and are ideal for high-side switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient performance.

Surface Mount: YES

Easy to install and suitable for automated assembly processes, saving time and effort.

Maximum Power Dissipation (Abs): 375 W

High power dissipation capability allows for reliable operation in demanding conditions.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for industrial or automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) SUM110P04-04L-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

281 mJ

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

110 A

Maximum Drain-Source On Resistance:

.0042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

240 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM110P04-04L-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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