Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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Vishay Intertechnology's SUM110P04-05-E3 is a P-channel FET with 40V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 240A max pulsed drain current and 281mJ avalanche energy rating. This MOSFET operates in enhancement mode, with -55 to 175°C temperature range and 0.005 ohm max RDS(on).
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This material provides good insulation and protection for the components inside, making the product durable and reliable.
P-channel FETs are known for their low on-resistance and high current-carrying capability, making them suitable for high-power applications.
The built-in diode simplifies circuit design and saves space, making the product more convenient to use.
Designed specifically for switching applications, ensuring efficient performance in controlling power flow.
Allows for easy and convenient installation on circuit boards, saving time during assembly.
With a high breakdown voltage, this FET can withstand high voltages without damage, making it suitable for a wide range of applications.
Rectangular shape allows for efficient use of space on the circuit board.
Gull wing terminals provide strong mechanical support and easy soldering, ensuring a reliable connection.
Enhancement mode FETs offer better control over the flow of current, providing precise switching capabilities.
Single element design simplifies circuit design and reduces complexity.
High pulsed current capability allows for handling peak loads and transient surges.
High avalanche energy rating indicates the ability to withstand voltage spikes, ensuring reliability in harsh environments.
High drain current rating enables the FET to handle high power levels without overheating.
Two terminals provide a simple connection interface.
High power dissipation rating allows the FET to handle high power levels efficiently.
Small outline package style saves space on the circuit board.
Metal-oxide semiconductor technology is known for its high efficiency and fast switching speeds.
With a high ambient power dissipation rating, the FET can operate efficiently in various environmental conditions.
High operating temperature rating ensures reliability in high-temperature environments.
Silicon material provides excellent performance and reliability in semiconductor devices.
Fast turn on time allows for quick response in switching applications.
Low operating temperature rating ensures the FET can operate in cold environments.
Fast turn off time minimizes switching losses and improves efficiency.
Matte tin finish provides good solderability and corrosion resistance for reliable connections.
Power Field Effect Transistors (FET) SUM110P04-05-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Maximum Turn On Time (ton):
SUM110P04-05-E3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Assembly/Origin - Assembly Site Add 9/Jun/2016
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
LL4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
Diotec Semiconductor Ag
BAV99
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
2N7002
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
Changzhou Galaxy Century Microelectronics
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
Zowie Technology
Hitano Enterprise
IRF5210PBF
Infineon Technologies
IRF5210PBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE. With a Drain Current of 40A and 0.06 ohm On Resistance, it offers reliable performance in various electronic systems.
IRFB4115PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Avalanche Energy Rating (EAS): 830 mJ; Maximum Drain Current (Abs) (ID): 104 A;
FQD1N80TM
FQD1N80TM by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 4A and EAS of 90mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 150°C.
NTF2955T1G
NTF2955T1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10.4A IDM, 225mJ EAS, and 0.185 ohm RDS(on). With ENHANCEMENT MODE operation and DUAL terminal position, it offers efficient power dissipation up to 1.92W in a SMALL OUTLINE package.
IRFL9014PBF
Vishay Intertechnology
Vishay Intertechnology's IRFL9014PBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.5 ohm Drain-Source On Resistance and 3.1W Max Power Dissipation.
JANTX2N6796U
Defense Logistics Agency
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-CQCC-N15; Maximum Pulsed Drain Current (IDM): 32 A; Operating Mode: ENHANCEMENT MODE;
SUM110P06-07L-E3
SUM110P06-07L-E3 by Vishay Intertechnology is a P-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 240A and an avalanche energy rating of 281mJ. This transistor is commonly used for switching applications in electronic circuits.
BSC016N06NSATMA1
Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.
2N7002T
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .3 A; No. of Elements: 1;
BSC014N06NSATMA1
BSC014N06NSATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.00145 ohm RDS(on), and 400A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 580mJ.
IRF3710PBF
IRF3710PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
FDD4141-F085
FDD4141-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0123 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures from -55 to 150 °C.
BSC340N08NS3GATMA1
Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
FDB3632-F085
FDB3632-F085 by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 100V. It is an N-channel transistor with a max drain current of 12A and a max power dissipation of 310W. This transistor is commonly used for switching applications in various industries.
IRFP460BPBF
Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.
IRLML0030TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
IRF7401TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 35 A;
IRF3205STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 55 V; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE;
NTD20P06LT4G
NTD20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 50A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 54W.
NTD3055L104T4G
NTD3055L104T4G by Onsemi is a power FET with 60V DS breakdown voltage, 45A IDM, and 0.104 ohm RDS(on). It is an N-channel transistor for switching applications. Operating in enhancement mode, it has a max power dissipation of 48W and can handle up to 175°C temperature.
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SUM110P06-08L-E3
Vishay Intertechnology's SUM110P06-08L-E3 is a P-channel FET with 60V DS breakdown voltage and 200A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.008 ohm max RDS(on), and 272W max power dissipation.
Vishay Semiconductors
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SUM110P08-11L-E3
Vishay Intertechnology's SUM110P08-11L-E3 is a P-channel FET with 80V DS breakdown voltage, ideal for switching applications. Features include 120A max pulsed drain current, 0.0112 ohm max RDS(on), and 375W max power dissipation. Suitable for enhancement mode operation in high-power circuits with operating temperatures ranging from -55 to 175°C.
SUM110N10-09-E3
Vishay Intertechnology's SUM110N10-09-E3 is a N-channel FET with 100V DS breakdown voltage and 0.0095 ohm max RDS(on). Ideal for switching applications, it features 110A max drain current, 440A pulsed drain current, and 437.5W power dissipation. Suitable for enhancement mode operation in high-power circuits.
SUM110P06-07L
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 110 A; Maximum Drain-Source On Resistance: .0069 ohm; JESD-609 Code: e0;
SUM110P04-04L-E3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Qualification: Not Qualified; Terminal Form: GULL WING;
SUM110P06-08L
Vishay Intertechnology's SUM110P06-08L is a P-channel FET with 60V DS breakdown voltage, 200A IDM, and 0.008 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 272W.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 175 Cel; Maximum Drain-Source On Resistance: .008 ohm;
SUM110N10-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; JEDEC-95 Code: TO-263AB; Terminal Finish: TIN LEAD;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 437.5 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 200 Cel;
SUM110N06-3M4L-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Drain Current (Abs) (ID): 110 A; Case Connection: DRAIN;
SUM10250E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE; Maximum Drain Current (ID): 63.5 A;
SUM110N03-03P-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 400 A;
SUM110N03-04P-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
SUM110N04-2M7H-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; Terminal Position: SINGLE; Transistor Element Material: SILICON;
SUM110N04-03-E3
SUM110N04-03-E3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and max drain current of 110A. This transistor is commonly used for switching applications due to its high pulsed drain current and low drain-source on resistance.
SUM110N06-3M9H-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
SUM110N04-2M3L-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SUM110P08-11
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; JEDEC-95 Code: TO-263AB; Terminal Form: GULL WING;
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