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SUM110N10-09-E3

Vishay Intertechnology

SUM110N10-09-E3 by Vishay Intertechnology

Vishay Intertechnology's SUM110N10-09-E3 is a N-channel FET with 100V DS breakdown voltage and 0.0095 ohm max RDS(on). Ideal for switching applications, it features 110A max drain current, 440A pulsed drain current, and 437.5W power dissipation. Suitable for enhancement mode operation in high-power circuits.

Median Price

$2.835

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Newark

USA . 687 parts In-Stock

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$4.580

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$2.200

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$2.010

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$4.580

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$2.010

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DigiKey

USA . 1,835 parts In-Stock

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$5.850

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$2.818

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$2.262

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1,835

$5.850

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$2.262

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Mouser Electronics

USA . 1,854 parts In-Stock

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$6.260

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$2.560

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$2.240

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1,854

$6.260

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Chip1Stop

Japan . 2,400 parts In-Stock

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$2.146

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Arrow

USA . 1,600 parts In-Stock

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$2.471

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Future Electronics

Canada . 800 parts In-Stock

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Verical

USA . 131 parts In-Stock

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$2.835

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$2.564

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$2.564

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Bristol Electronics

USA . 423 parts In-Stock

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$3.484

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$1.637

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$1.498

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423

$3.484

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$1.498

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TME

Poland . 131 parts In-Stock

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$5.360

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$2.660

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$2.540

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131

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Ozdisan Elektronik

Türkiye . 15,072 parts In-Stock

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$57.130

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Chip Stock

USA . 68,513 parts In-Stock

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Martec Srl

Italy . 8,000 parts In-Stock

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Sensible Micro Corp

USA . 8,000 parts In-Stock

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IBS Electronics

USA . 6,400 parts In-Stock

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$5.905

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$2.805

6,400

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$2.805

Vyrian

USA . 3,588 parts In-Stock

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NAC Semi

USA . 3,200 parts In-Stock

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$4.100

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$3.730

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$3.730

Q Components

USA . 1,416 parts In-Stock

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Zilex Electronics Inc.

Canada . 800 parts In-Stock

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R&J Components

USA . 780 parts In-Stock

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Dan-Mar Components

USA . 423 parts In-Stock

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423

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Connector Distribution Corp

USA . 100 parts In-Stock

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100

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Right Parts Inc.

USA . 100 parts In-Stock

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100

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 70 parts In-Stock

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Electronics Depot

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Semicontronic

India . 3,724 parts In-Stock

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$1.540

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$1.533

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Ampacity Inc.

Singapore . 3,426 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,549 parts In-Stock

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Corohmni

South Africa . 443 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$2.641

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$2.509

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Andel Nordic

Denmark . 5,037 parts In-Stock

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$3.337

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$3.203

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$3.203

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Continental Prestige Electronics

USA . 2,584 parts In-Stock

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$3.520

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$3.450

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Netroflash

USA . 1,000 parts In-Stock

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$3.520

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$3.450

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Argo Parts USA

USA . 347 parts In-Stock

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Microchip USA

USA . 9,082 parts In-Stock

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$15.909

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Kepictronics

USA . 64,800 parts In-Stock

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Infinite Electronics LLP (Excess)

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Assy Fe

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GreenTree Electronics

Israel . 70 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Vishay Intertechnology SUM110N10-09-E3 Power Field Effect Transistor. Designed for high-performance switching applications, this N-channel transistor offers unparalleled reliability and efficiency. With a maximum pulsing drain current of 440A and a low on-resistance of just 0.0095 ohms, this FET delivers exceptional power handling capabilities. Whether you're looking to optimize your power management system or enhance the performance of your electronic devices, the SUM110N10-09-E3 is the ultimate solution. Trust Vishay Intertechnology for quality components that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance characteristics compared to P-Channel FETs, making this product a good choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect the FET from reverse polarity or voltage spikes, enhancing the overall reliability of the system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low on-resistance, making it efficient and effective in controlling power flow.

Maximum Pulsed Drain Current (IDM): 440 A

With a high maximum pulsed drain current, this FET can handle sudden surges of current without deteriorating, making it suitable for high-power applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this FET to operate reliably in harsh environments with elevated temperatures, ensuring stability and longevity.

Technical Specifications

Power Field Effect Transistors (FET) SUM110N10-09-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

110 A

Maximum Drain-Source On Resistance:

.0095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

440 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM110N10-09-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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