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SIRA90DP-T1-RE3

Vishay Intertechnology

SIRA90DP-T1-RE3 by Vishay Intertechnology

Vishay Intertechnology's SIRA90DP-T1-RE3 is a N-channel FET with 30V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 400A max pulsed drain current and 0.0008 ohm max drain-source resistance. Suitable for surface mount design, this MOSFET operates in enhancement mode at temperatures ranging from -55 to 150°C.

Median Price

$0.646

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 36,119 parts In-Stock

1+ parts

$2.430

100+ parts

$1.060

1k+ parts

$0.778

10k+ parts

$0.725

36,119

$2.430

$1.060

$0.778

$0.725

DigiKey

USA . 3,040 parts In-Stock

1+ parts

$2.430

100+ parts

$1.059

1k+ parts

$0.777

10k+ parts

-

3,040

$2.430

$1.059

$0.777

-

TTI

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.630

6,000

-

-

-

$0.630

RS (Exports)

UK . 6,000 parts In-Stock

1+ parts

-

100+ parts

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-

10k+ parts

$0.644

6,000

-

-

-

$0.644

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.620

6,000

-

-

-

$0.620

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

$0.647

6,000

-

-

-

$0.647

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 95,187 parts In-Stock

1+ parts

$0.619

100+ parts

-

1k+ parts

-

10k+ parts

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95,187

$0.619

-

-

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.776

100+ parts

-

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600

$0.776

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Maritex

Poland . 14,000 parts In-Stock

1+ parts

$1.561

100+ parts

$0.911

1k+ parts

-

10k+ parts

-

14,000

$1.561

$0.911

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,616 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

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11,616

$0.490

-

-

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Continental Prestige Electronics

USA . 5,762 parts In-Stock

1+ parts

$0.776

100+ parts

-

1k+ parts

-

10k+ parts

$0.760

5,762

$0.776

-

-

$0.760

Argo Parts USA

USA . 1,876 parts In-Stock

1+ parts

$0.776

100+ parts

-

1k+ parts

-

10k+ parts

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1,876

$0.776

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-

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Advanced Electronics

New Zealand . 17 parts In-Stock

1+ parts

$0.783

100+ parts

$0.783

1k+ parts

$0.783

10k+ parts

-

17

$0.783

$0.783

$0.783

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Microchip USA

USA . 7,478 parts In-Stock

1+ parts

$4.607

100+ parts

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7,478

$4.607

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.760

1k+ parts

$0.737

10k+ parts

$0.722

2,000

-

$0.760

$0.737

$0.722

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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500

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Overview

Discover the power of the SIRA90DP-T1-RE3 by Vishay Intertechnology, a top-of-the-line Power Field Effect Transistor designed for high-performance applications. With a focus on quality and reliability, Vishay Intertechnology offers customers a product that delivers exceptional value and benefits. Ideal for switching operations, this N-CHANNEL transistor boasts a built-in diode for added convenience. Experience enhanced efficiency and performance with the SIRA90DP-T1-RE3, the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and helps protect the internal components of the FET.

Minimum DS Breakdown Voltage: 30 V

This high breakdown voltage ensures the FET can handle higher voltage applications without being damaged.

Maximum Pulsed Drain Current (IDM): 400 A

The high pulsed drain current capacity allows the FET to handle large current spikes effectively.

Maximum Power Dissipation (Abs): 104 W

With a high power dissipation rating, this FET can handle high power applications without overheating.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperatures without performance degradation, making it suitable for demanding environments.

Technical Specifications

Power Field Effect Transistors (FET) SIRA90DP-T1-RE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

100 A

Maximum Drain-Source On Resistance:

.0008 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

306 pF

JESD-30 Code:

R-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

400 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

189 ns

Maximum Turn On Time (ton):

220 ns

Trade Compliance

SIRA90DP-T1-RE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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