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SIRA10BDP-T1-GE3

Vishay Intertechnology

SIRA10BDP-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SIRA10BDP-T1-GE3 is a N-channel Power FET with 30V DS breakdown voltage and 150A IDM. Ideal for switching applications, it features a built-in diode, 0.0036 ohm RDS(on), and operates in the -55 to 150°C temperature range.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,921 parts In-Stock

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$0.320

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$0.320

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Farnell

UK . 9,435 parts In-Stock

1+ parts

$0.445

100+ parts

$0.233

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$0.190

10k+ parts

$0.186

9,435

$0.445

$0.233

$0.190

$0.186

Arrow

USA . 3,000 parts In-Stock

1+ parts

$0.455

100+ parts

$0.332

1k+ parts

$0.279

10k+ parts

$0.224

3,000

$0.455

$0.332

$0.279

$0.224

Element14

Singapore . 9,395 parts In-Stock

1+ parts

$60.630

100+ parts

$36.360

1k+ parts

$34.300

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-

9,395

$60.630

$36.360

$34.300

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Future Electronics

Canada . 3,000 parts In-Stock

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$0.335

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$0.335

Verical

USA . 3,000 parts In-Stock

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100+ parts

$0.332

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$0.279

10k+ parts

$0.224

3,000

-

$0.332

$0.279

$0.224

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 36,885 parts In-Stock

1+ parts

$0.335

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$0.335

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J2 Sourcing AB

Sweden . 27,798 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 8,250 parts In-Stock

1+ parts

$0.285

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8,250

$0.285

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Corohmni

South Africa . 28 parts In-Stock

1+ parts

$1.484

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28

$1.484

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Infinite Electronics LLP (Excess)

. 27,807 parts In-Stock

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27,807

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 10,080 parts In-Stock

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Continental Prestige Electronics

USA . 9,435 parts In-Stock

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$0.310

1k+ parts

$0.253

10k+ parts

$0.238

9,435

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$0.310

$0.253

$0.238

Kepictronics

USA . 3,502 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Overview

Unleash the power of your electronic devices with the SIRA10BDP-T1-GE3 Power Field Effect Transistor by Vishay Intertechnology. This high-quality N-CHANNEL transistor with a built-in diode is designed for switching applications, offering reliable performance and efficiency. With a maximum pulsing drain current of 150 A and a low on-resistance of 0.0036 ohms, this transistor delivers superior power handling capabilities. Trust Vishay Intertechnology to provide you with cutting-edge technology that enhances the functionality of your products. Experience the difference with the SIRA10BDP-T1-GE3 and take your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the FET, making it suitable for various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in switching applications, offering efficient performance and lower ON-resistance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide protection against reverse voltage, enhancing the functionality of the FET.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast switching speeds and high efficiency, making it ideal for power control and conversion.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures reliable operation in higher voltage applications, enhancing the overall performance of the FET.

Surface Mount: YES

Being surface mountable, this FET is easy to install on PCBs, saving space and enabling automated assembly processes.

Maximum Drain Current (ID): 60 A

With a high maximum drain current of 60A, this FET can handle heavy loads, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 43 W

The high power dissipation rating of 43W ensures the FET can operate effectively without overheating, improving reliability in demanding conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand elevated temperatures, making it suitable for a wide range of environments.

Maximum Turn Off Time (toff): 70 ns

The fast turn-off time of 70ns ensures efficient switching transitions, reducing power losses and improving overall performance.

Technical Specifications

Power Field Effect Transistors (FET) SIRA10BDP-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

20 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Maximum Drain-Source On Resistance:

.0036 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

68 pF

JESD-30 Code:

R-PDSO-F5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

150 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

70 ns

Maximum Turn On Time (ton):

55 ns

Trade Compliance

SIRA10BDP-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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